Patent US4162185A successfully refreshed from Google Patents.
US4162185A
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Utilizing saturated and unsaturated halocarbon gases in plasma etching to increase etch of SiO2 relative to Si
Assignee: International Business Machines Corp
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Filing: 1978-03-21
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Granted: 1979-07-24
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Expires: 1998-03-21
Abstract
Abstract A method of plasma etching silica at a faster rate than silicon involves using a gaseous mixture containing an unsaturated halocarbon and a saturated halocarbon. The preferred halocarbon contains fluorine. A preferred embodiment is a gaseous mixture containing C 3 F 6 and C 2 F 6 .
Inventors
- 👤 John W. Coburn
- 👤 Harold F. Winters
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 08:15
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P50/28; H10P50/282; H10P50/283
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
94 words
A method of adjusting the SiO 2 /Si etch rate ratio in an article having both SiO 2 and Si in a plasma etching system comprising the steps of introducing a controllable flow rate of a saturated halocarbon gas into a plasma etching system, introducing a controllable flow rate of an unsaturated halocarbon gas into said plasma etching system to mix with the saturated hydrocarbon gas and form a plasma, and adjusting the relative flow rates of the saturated halocarbon and the unsaturated halocarbon gases to control the SiO 2 /Si etch rate ratio.
Claim 2
Independent Claim
94 words
A method of adjusting the SiO 2 /Si etch rate ratio in an article having both SiO 2 and Si in a plasma etching system comprising the steps of introducing a controllable flow rate of a saturated halocarbon gas into a plasma etching system, introducing a controllable flow rate of an unsaturated halocarbon gas into said plasma etching system to mix with the saturated hydrocarbon gas and form a plasma, and adjusting the relative flow rates of the saturated halocarbon and the unsaturated halocarbon gases to control the SiO 2 /Si etch rate ratio.
Claim 3
Dependent Claim
23 words
A method as described in claim 1 whereby the relative flow rates are adjusted by increasing the flow rate of the unsaturated hydrocarbon.
Claim 4
Dependent Claim
29 words
A method as described in claim 1 whereby the saturated halocarbon gas and the unsaturated halocarbon gas are mixed together prior to being introduced into the plasma etching system.
Claim 5
Dependent Claim
17 words
A method as described in claim 1 whereby said unsaturated halocarbon is C 3 F 6 .
Claim 6
Dependent Claim
17 words
A method as described in claim 1 whereby said unsaturated halocarbon is C 2 F 4 .
Claim 7
Dependent Claim
24 words
A method as described in claim 1 whereby said unsaturated halocarbon is C 3 F 4 and said saturated halocarbon is CF 4 .
Claim 8
Dependent Claim
13 words
A method as described in claim 1 whereby said unsaturated halocarbon contains fluorine.
Claim 9
Dependent Claim
13 words
A method as described in claim 7 whereby said saturated halocarbon contains fluorine.
Claim 10
Dependent Claim
33 words
A method as described in claim 8 whereby the relative flow rates of the gases are adjusted so that the halogen/carbon ratio of the gaseous mixture is a value between 2 and 3.
References Cited (Backward Citations)
US3806365A
Cited
US3867216A
Cited
US3791684A
Cited
US4026742A
Cited
US3940506A
Cited
US3984301A
Cited
US3923568A
Cited
US4028155A
Cited
US4007104A
Cited
US3975252A
Cited
US4012307A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-07-23 | 1983-01-22 | 1983-07-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-07-23 | 1987-01-22 | 1987-07-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-07-23 | 1991-01-22 | 1991-07-24 | $7700.00 | Window Closed / Lapsed |