US4162177A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming solar cell with discontinuous junction
Assignee: BP Solar International LLC
•
Filing: 1978-03-06
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Granted: 1979-07-24
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Expires: 1998-03-06
Abstract
Abstract A silicon solar energy cell having a substantially constant voltage despite significant increases in illumination, which cell has a back surface junction that is discontinuous and has spaced, shorted portions formed therein.
Inventors
- 👤 Joseph Lindmayer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 10:37
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/14; H10F77/00; H10F77/10; H10F77/14; H10F77/148; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y10; Y10S; Y10S148/00; Y10S148/033; Y10S148/153; Y10S438/00; Y10S438/965
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
110 words
A method of forming a back junction in a silicon solar energy cell having a front surface adapted to receive light impinging thereon and an opposed back surface, comprising applying to the back surface of a silicon wafer a discontinuous coating of a metal capable of forming a back junction, and heating the wafer at a temperature sufficient to cause the discontinuous layer to be alloyed into and penetrate said back surface and form a discontinuous step junction at said surface so that when light impinges on the front surface of the wafer, the cell will generate electricity at a generally constant voltage over a substantial range of light intensities.
Claim 2
Independent Claim
110 words
A method of forming a back junction in a silicon solar energy cell having a front surface adapted to receive light impinging thereon and an opposed back surface, comprising applying to the back surface of a silicon wafer a discontinuous coating of a metal capable of forming a back junction, and heating the wafer at a temperature sufficient to cause the discontinuous layer to be alloyed into and penetrate said back surface and form a discontinuous step junction at said surface so that when light impinges on the front surface of the wafer, the cell will generate electricity at a generally constant voltage over a substantial range of light intensities.
Claim 3
Dependent Claim
36 words
A method as claimed in claim 1, in which said discontinuous coating is applied to said back surface after a front junction has been formed in said wafer by diffusion of an impurity into said wafer.
Claim 4
Dependent Claim
35 words
A method as claimed in claim 1, in which said back junction-forming metal is aluminum and said discontinuous layer is applied in a total area less than one-half of said back surface of said wafer.
Claim 5
Dependent Claim
36 words
A method as claimed in claim 1, in which said metal coating is applied to said back surface of said silicon wafer in the form of portions uniformly spaced from each other along said back surface.
Claim 6
Dependent Claim
30 words
A method as claimed in claim 1 or claim 4, in which said metal coating is applied to said back surface in the form of portions that are substantially circular.
Claim 7
Dependent Claim
39 words
A method as claimed in claim 1, in which said discontinuous coating is applied to said back surface in the form of stripes separated from adjoining stripes by a distance at least equal to the width of said stripes.
Claim 8
Independent Claim
20 words
A method as claimed in claims 1, 2, 4, 5 or 6, in which said back junction-forming metal is aluminum.
References Cited (Backward Citations)
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Cited
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-07-23 | 1983-01-22 | 1983-07-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-07-23 | 1987-01-22 | 1987-07-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-07-23 | 1991-01-22 | 1991-07-24 | $7700.00 | Window Closed / Lapsed |