Process for cleaning semi-conductor discs

Claim 2

In a process for polishing and cleaning semiconductor discs wherein the discs are initially attached by adhesive matter to a polishing plate, polished, removed from the polishing plate and then cleaned by dissolving and rinsing operations to remove the adhesive matter remaining on the discs, the improvement consisting essentially of directly following removal of said discs from said polishing plate, performing said dissolving operation by immersing the polished semiconductor discs in a circulating bath of a solution of non-ionic or anionic surfactants wherein the amount of surfactant ranges from about 30 to 100% by weight, based upon the weight of the solution, said bath being maintained at a temperature ranging from 20° to 80° C. and said immersing step being effected for a period of about 3 to 8 minutes and thereafter performing said rinsing operation by rinsing said discs with water of the highest purity, said dissolving and rinsing operations resulting in removal of said adhesive matter and impurities from said polished discs.

Claim 3

The method of claim 1, wherein the surfactant is a member of the group consisting of a salt of a long-chain carboxylic acid, a sulphuric acid ester, an anionic fluorine-containing surfactant, an ethylene oxide addition compounds, a fatty acid monoglyceride, a carbohydrate fatty acid ester, a non-ionic fluorohydrocarbon, and a non-ionic ethylene diamine derivative.

Claim 4

The process according to claim 1, wherein following said initial immersing step and said rinsing step, said discs are immersed in a bath of a solution which imparts water repellancy to said discs.

Claim 5

The process according to claim 3, wherein said water-repellancy imparting-solution comprises an aqueous solution of a cationic surfactant amounting to 0.3-5% by weight, based on the weight of the solution.

Claim 6

The process according to claim 3, wherein said water-repellency imparting-solution comprises a solution of hydrofluoric acid.

Claim 7

In a process for polishing and cleaning semi-conductor discs wherein the discs are initially attached by adhesive matter to a polishing plate, polished, removed from the polishing plate and then cleaned by dissolving and rinsing operations to remove the adhesive matter remaining on the discs, the improvement comprising: directly following removal of said discs from said polishing plate, performing said dissolving operation by initially immersing the polished semi-conductor discs in a circulating bath of a solution of non-ionic or anionic surfactants, wherein the amount of surfactant ranges from about 30 to 100% by weight, based upon the weight of the solution, said bath being maintained at a temperature ranging from 20° to 80° C. and said immersing step being effected for a period of about 3 to 8 minutes; performing said rinsing operation by rinsing said discs with water of highest purity following said initial immersing step, said dissolving and rinsing operations resulting in removal of said adhesive matter and impurities from said discs; and following said initial immersing and rinsing steps, immersing said discs in a bath of a washing solution containing 0.5 to 1.5% by weight of anionic or non-ionic surfactants, through which solution, air is blown forming foam bubbles which bubbles serve to further remove impurities from the discs.

Claim 8

In a process for polishing and cleaning semi-conductor discs wherein the discs are initially attached by adhesive matter to a polishing plate, polished, removed from the polishing plate and then cleaned by dissolving and rinsing operations to remove the adhesive matter remaining on the discs, the improvement comprising: directly following removal of said discs from said polishing plate, performing said dissolving operation by initially immersing the polished semi-conductor discs in a circulating bath of a solution of non-ionic or anionic surfactants, wherein the amount of surfactant ranges from about 30 to 100% by weight, based upon the weight of the solution, said bath being maintained at a temperature ranging from 20° to 80° C. and said immersing step being effected for a period of about 3 to 8 minutes; performing said rinsing operation by rinsing said discs with water of highest purity following said initial immersing step, said dissolving and rinsing operations resulting in removal of said adhesive matter and impurities from said discs; and following said initial immersing and rinsing steps, immersing said discs in a bath of a washing solution containing 0.5 to 1.5% by weight of anionic or non-ionic surfactants, through which solution, air is blown forming foam bubbles which bubbles serve to further remove impurities from the discs.