Patent US4150394A successfully refreshed from Google Patents.
← Back to Patent Explorer
US4150394A Expired / Lapsed US ⏱️ 0.0 years remaining

Flat package semiconductor device having high explosion preventing capacity

Assignee: Mitsubishi Electric Corp
•
Filing: 1977-10-20
•
Granted: 1979-04-17
•
Expires: 1997-10-20
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A semiconductor element is disposed within a hollow cylindrical, electrically insulating member. The member has each of opposite open ends closed with a respective electrode of the element and a piece of thin sheet metal to form an annular space on either side of the semiconductor element. A silicone rubber layer is attached to that surface of the metallic piece facing the semiconductor element, and a high thermally resisting ceramic annulus is buried in the layer.

Inventors

  • 👤 Yoshiyuki Sugawa
  • 👤 Yoshiro Shikano

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-04 07:50
CPC Classifications
H; H10; H10W; H10W76/00; H10W76/40; H10W42/00; H10W42/60; H10W76/10; H10W76/12; H10W76/13; H10W76/138

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 177 words
A semiconductor device comprising: a hollow, cylindrical electrically insulating member having first and second open opposite ends; a semiconductor element positioned within said insulating member and having first and second opposite surfaces facing said first and second open ends, respectively; first and second electrodes contacting said first and second opposite surfaces of said semiconductor element, respectively, said first and second electrodes sandwiching therebetween said semiconductor element within said housing member; first and second diaphragms extending outwardly from said first and second electrodes, respectively, to said insulating member, said first and second diaphragms hermetically sealing said first and second open ends of said insulating member; said first and second diaphragms forming within said insulating member respective first and second annular spaces extending peripherally outwardly of said first and second electrodes, respectively; first and second adhesive, electrically insulating layers attached to said first and second diaphragms, respectively, and at least partially filling said first and second annular spaces, respectively; and first and second high thermally resisting, electrically insulating annular-shaped members embedded in said first and second insulating layers, respectively.
Claim 2
Dependent Claim 177 words
A semiconductor device comprising: a hollow, cylindrical electrically insulating member having first and second open opposite ends; a semiconductor element positioned within said insulating member and having first and second opposite surfaces facing said first and second open ends, respectively; first and second electrodes contacting said first and second opposite surfaces of said semiconductor element, respectively, said first and second electrodes sandwiching therebetween said semiconductor element within said housing member; first and second diaphragms extending outwardly from said first and second electrodes, respectively, to said insulating member, said first and second diaphragms hermetically sealing said first and second open ends of said insulating member; said first and second diaphragms forming within said insulating member respective first and second annular spaces extending peripherally outwardly of said first and second electrodes, respectively; first and second adhesive, electrically insulating layers attached to said first and second diaphragms, respectively, and at least partially filling said first and second annular spaces, respectively; and first and second high thermally resisting, electrically insulating annular-shaped members embedded in said first and second insulating layers, respectively.
Claim 3
Dependent Claim 40 words
A semiconductor device as claimed in claim 1, wherein said first electrode and said first diaphragm are integrally formed as a single member having a flat central portion comprising said first electrode and a peripheral portion comprising said first diaphragm.
Claim 4
Dependent Claim 44 words
A semiconductor device as claimed in claim 1, wherein said first and second high thermally resisting, electrically insulating annular-shaped members are formed of an electrically insulating material having a higher thermal resistance than the material of said first and second adhesive, electrically insulating layers.
Claim 5
Dependent Claim 40 words
A semiconductor device as claimed in claim 3, wherein said first and second adhesive, electrically insulating layers are composed of silicone rubber, and said first and second high thermally resisting, electrically insulating annular-shaped members are composed of a ceramic material.
Claim 6
Dependent Claim 37 words
A semiconductor device as claimed in claim 3,wherein said first and second adhesive, electrically insulating layers are composed of silicone rubber, and said first and second high thermally resisting, electrically insulating annular-shaped members are composed of alumina.

References Cited (Backward Citations)

US3566958A Cited
US3581160A Cited
US3651383A Cited
US3721867A Cited
US3992717A Cited
US3975758A Cited
US4008486A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1982-04-16 1982-10-16 1983-04-17 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1986-04-16 1986-10-16 1987-04-17 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1990-04-16 1990-10-16 1991-04-17 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag