Patent US4150394A successfully refreshed from Google Patents.
US4150394A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Flat package semiconductor device having high explosion preventing capacity
Assignee: Mitsubishi Electric Corp
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Filing: 1977-10-20
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Granted: 1979-04-17
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Expires: 1997-10-20
Abstract
Abstract A semiconductor element is disposed within a hollow cylindrical, electrically insulating member. The member has each of opposite open ends closed with a respective electrode of the element and a piece of thin sheet metal to form an annular space on either side of the semiconductor element. A silicone rubber layer is attached to that surface of the metallic piece facing the semiconductor element, and a high thermally resisting ceramic annulus is buried in the layer.
Inventors
- 👤 Yoshiyuki Sugawa
- 👤 Yoshiro Shikano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 07:50
CPC Classifications
H; H10; H10W; H10W76/00; H10W76/40; H10W42/00; H10W42/60; H10W76/10; H10W76/12; H10W76/13; H10W76/138
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
177 words
A semiconductor device comprising: a hollow, cylindrical electrically insulating member having first and second open opposite ends; a semiconductor element positioned within said insulating member and having first and second opposite surfaces facing said first and second open ends, respectively; first and second electrodes contacting said first and second opposite surfaces of said semiconductor element, respectively, said first and second electrodes sandwiching therebetween said semiconductor element within said housing member; first and second diaphragms extending outwardly from said first and second electrodes, respectively, to said insulating member, said first and second diaphragms hermetically sealing said first and second open ends of said insulating member; said first and second diaphragms forming within said insulating member respective first and second annular spaces extending peripherally outwardly of said first and second electrodes, respectively; first and second adhesive, electrically insulating layers attached to said first and second diaphragms, respectively, and at least partially filling said first and second annular spaces, respectively; and first and second high thermally resisting, electrically insulating annular-shaped members embedded in said first and second insulating layers, respectively.
Claim 2
Dependent Claim
177 words
A semiconductor device comprising: a hollow, cylindrical electrically insulating member having first and second open opposite ends; a semiconductor element positioned within said insulating member and having first and second opposite surfaces facing said first and second open ends, respectively; first and second electrodes contacting said first and second opposite surfaces of said semiconductor element, respectively, said first and second electrodes sandwiching therebetween said semiconductor element within said housing member; first and second diaphragms extending outwardly from said first and second electrodes, respectively, to said insulating member, said first and second diaphragms hermetically sealing said first and second open ends of said insulating member; said first and second diaphragms forming within said insulating member respective first and second annular spaces extending peripherally outwardly of said first and second electrodes, respectively; first and second adhesive, electrically insulating layers attached to said first and second diaphragms, respectively, and at least partially filling said first and second annular spaces, respectively; and first and second high thermally resisting, electrically insulating annular-shaped members embedded in said first and second insulating layers, respectively.
Claim 3
Dependent Claim
40 words
A semiconductor device as claimed in claim 1, wherein said first electrode and said first diaphragm are integrally formed as a single member having a flat central portion comprising said first electrode and a peripheral portion comprising said first diaphragm.
Claim 4
Dependent Claim
44 words
A semiconductor device as claimed in claim 1, wherein said first and second high thermally resisting, electrically insulating annular-shaped members are formed of an electrically insulating material having a higher thermal resistance than the material of said first and second adhesive, electrically insulating layers.
Claim 5
Dependent Claim
40 words
A semiconductor device as claimed in claim 3, wherein said first and second adhesive, electrically insulating layers are composed of silicone rubber, and said first and second high thermally resisting, electrically insulating annular-shaped members are composed of a ceramic material.
Claim 6
Dependent Claim
37 words
A semiconductor device as claimed in claim 3,wherein said first and second adhesive, electrically insulating layers are composed of silicone rubber, and said first and second high thermally resisting, electrically insulating annular-shaped members are composed of alumina.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-04-16 | 1982-10-16 | 1983-04-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-04-16 | 1986-10-16 | 1987-04-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-04-16 | 1990-10-16 | 1991-04-17 | $7700.00 | Window Closed / Lapsed |