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US4148045A
Expired / Lapsed
US
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Multicolor light emitting diode array
Assignee: International Business Machines Corp
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Filing: 1977-09-21
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Granted: 1979-04-03
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Expires: 1997-09-21
Abstract
Abstract Multicolor light emitting diode arrays can be made using a binary semiconductor substrate on which is grown a graded epitaxial region of an AB 1-x C x semiconductor. Diodes emitting various light colors can selectively be formed in different regions of the gradient by etching away a portion of the graded region. Arrays of colored light emitting diodes can be made by the techniques of diffusion and selective etching of the graded material.
Inventors
- 👤 Frank F. Fang
- 👤 Kwang K. Shih
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 15:17
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/822; H10H20/824; H10H29/00; H10H29/10; H10H29/14; H10H29/142; Y; Y10; Y10S; Y10S438/00; Y10S438/956
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
80 words
An electrical to electrooptical energy conversion device comprising a monocrystalline semiconductor body of the type AB 1-x C x , said body having at least one major surface and having the variable x evenly varying along a vertical dimension with respect to said major surface throughout the full range from 0 to 1, and at least one p-n junction formed in said body at an exposed position corresponding to a particular value of x within said evenly varying full range.
Claim 2
Dependent Claim
80 words
An electrical to electrooptical energy conversion device comprising a monocrystalline semiconductor body of the type AB 1-x C x , said body having at least one major surface and having the variable x evenly varying along a vertical dimension with respect to said major surface throughout the full range from 0 to 1, and at least one p-n junction formed in said body at an exposed position corresponding to a particular value of x within said evenly varying full range.
Claim 3
Dependent Claim
79 words
A light emitting diode array comprising a monocrystalline semiconductor body of the type AB 1-x C x said body having at least one major surface and having the variable x evenly varying along a vertical dimension with respect to said major surface throughout the full range from 0 to 1, and a plurality of selectable color light emitting diodes made at exposed selected depths in said body governed by the value of the variable x at the particular depth.
Claim 4
Dependent Claim
79 words
A light emitting diode array comprising a monocrystalline semiconductor body of the type AB 1-x C x said body having at least one major surface and having the variable x evenly varying along a vertical dimension with respect to said major surface throughout the full range from 0 to 1, and a plurality of selectable color light emitting diodes made at exposed selected depths in said body governed by the value of the variable x at the particular depth.
Claim 5
Dependent Claim
61 words
A semiconductor intermediate manufacturing structure comprising a monocrystalline semiconductor body made up of a substrate member epitaxially contiguous with a plurality of regions AB 1-x C x semiconductor material having the variable x evenly varying throughout the full range from 0 to 1 from said substrate member to an upper surface, said AB 1-x C x regions separated by transverse slots.
Claim 6
Dependent Claim
61 words
A semiconductor intermediate manufacturing structure comprising a monocrystalline semiconductor body made up of a substrate member epitaxially contiguous with a plurality of regions AB 1-x C x semiconductor material having the variable x evenly varying throughout the full range from 0 to 1 from said substrate member to an upper surface, said AB 1-x C x regions separated by transverse slots.
Claim 7
Dependent Claim
18 words
The device of claim 1 wherein said monocrystalline semiconductor body is made of GaAs 1-x P x .
Claim 8
Dependent Claim
26 words
The device of claim 1 wherein said monocrystalline semiconductor body comprises a substrate region and an epitaxial region of the type AB 1-x C x .
Claim 9
Dependent Claim
15 words
The device of claim 5 wherein said epitaxial region is GaAs 1-x P x .
Claim 10
Dependent Claim
26 words
The array of claim 2 wherein said monocrystalline semiconductor body comprises a substrate region and an epitaxial region of the type AB 1-x C x .
Claim 11
Dependent Claim
17 words
The array of claim 7 wherein said semiconductor body is made of GaAs 1-x P x .
Claim 12
Dependent Claim
32 words
The structure of claim 3 wherein said transverse slots are filled with a second semiconductor material AB 1-x C x that is different by at least one ingredient or of ingredient concentration.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-04-02 | 1982-10-02 | 1983-04-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-04-02 | 1986-10-02 | 1987-04-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-04-02 | 1990-10-02 | 1991-04-03 | $7700.00 | Window Closed / Lapsed |