Abstract There is disclosed a multicolor monolithic light display comprising a pair of matrices of light emitting diodes in an integral structure which pair of matrices are alternately or simultaneously scannable to produce a red, green or orange display. One matrix includes a plurality of gallium arsenide phosphide (GaAsXP1-X) red light emitting diodes while the other matrix includes gallium phosphide green light emitting diodes. The light emitting diodes are arranged in a geometric pattern of columns and rows with the first matrix interposed with the second matrix so that an alphanumeric character produced by one matrix will appear at almost the same physical location as a character of the alternate color. Row and column address lines are provided for each matrix so that a strobing format logic address system can affect lighting of the individual diodes for producing an alphanumeric character or graphic display in either one color or the other or if both matrices are addressed simultaneously in a combined color. There are also disclosed alternate methods of manufacturing the foregoing multicolor display.
A PROCESS FOR THE MANUFACTURE OF A MULTI-COLOR MONOLITHIC LIGHT DISPLAY COMPRISING: PROVIDING A SUBSTRATE OF A SEMICONDUCTOR MATERIAL OF A FIRST COMPOSITION, EPITAXIALLY DEPOSITING THEREON A SEMICONDUCTOR MATERIAL LAYER GRADED FROM SAID FIRST COMPOSITION TO A SEMIICONDUCTOR MATERIAL OF A SECOND COMPOSITION, CONTINUOUSLY THE DEPOSITION OF SAID SECOND COMPOSITION MATERIAL TO FORM A COHERENT LAYER ON SAID GRADED LAYER, MASKING SELECTED PORTIONS OF SAID LAYER OF SAID SECOND COMPOSITION MATERIAL, EPITAXIALLY DEPOSITING MESAS OF SEMICONDUCTOR MATERIAL ON THE UNMASKED PORTIONS OF SAID LAYER OF THE SECOND COMPOSITION MATERIAL, WHICH MESAS ARE GRADED FROM THE SAID SECOND COMPOSITION MATERIAL TO A SEMICONDUCTOR MATERIAL OF A THIRD COMPOSITION, CONTINUING DEPOSITION OF SAID THIRD COMPOSITION MATERIAL TO FORM A COHERENT LAYER THEREOF ON THE SURFACE OF SAID MESAS, MASKING SELECTED PORTIONS OF SAID MESA AND SAID LAYER OF THE SECOND COMPOSITION MATERIAL, AND DIFFUSING DOPANTS INTO SELECTED UNMASKED PORTIONS THEREOF TO FORM PPN JUNCTIONS IN THE SURFACE OF SAID MESAS AND IN THE SURFACE OF THE LAYER OF THE SECOND COMPOSITION MATERIAL BETWEEN SAID MESAS.
Claim 2
Dependent Claim
173 words
A PROCESS FOR THE MANUFACTURE OF A MULTI-COLOR MONOLITHIC LIGHT DISPLAY COMPRISING: PROVIDING A SUBSTRATE OF A SEMICONDUCTOR MATERIAL OF A FIRST COMPOSITION, EPITAXIALLY DEPOSITING THEREON A SEMICONDUCTOR MATERIAL LAYER GRADED FROM SAID FIRST COMPOSITION TO A SEMIICONDUCTOR MATERIAL OF A SECOND COMPOSITION, CONTINUOUSLY THE DEPOSITION OF SAID SECOND COMPOSITION MATERIAL TO FORM A COHERENT LAYER ON SAID GRADED LAYER, MASKING SELECTED PORTIONS OF SAID LAYER OF SAID SECOND COMPOSITION MATERIAL, EPITAXIALLY DEPOSITING MESAS OF SEMICONDUCTOR MATERIAL ON THE UNMASKED PORTIONS OF SAID LAYER OF THE SECOND COMPOSITION MATERIAL, WHICH MESAS ARE GRADED FROM THE SAID SECOND COMPOSITION MATERIAL TO A SEMICONDUCTOR MATERIAL OF A THIRD COMPOSITION, CONTINUING DEPOSITION OF SAID THIRD COMPOSITION MATERIAL TO FORM A COHERENT LAYER THEREOF ON THE SURFACE OF SAID MESAS, MASKING SELECTED PORTIONS OF SAID MESA AND SAID LAYER OF THE SECOND COMPOSITION MATERIAL, AND DIFFUSING DOPANTS INTO SELECTED UNMASKED PORTIONS THEREOF TO FORM PPN JUNCTIONS IN THE SURFACE OF SAID MESAS AND IN THE SURFACE OF THE LAYER OF THE SECOND COMPOSITION MATERIAL BETWEEN SAID MESAS.
Claim 3
Dependent Claim
24 words
A process as recited in claim 1 wherein the surface of said mesas is gallium phosphide and the surface of said substrate is GaAs.6P.4.
Claim 4
Dependent Claim
23 words
A process as recited in claim 1 wherein the surface of said mesas is GaAs.6P.4 and the surface of said substrate is GaP.