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US4147572A
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Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique
Assignee: Individual
•
Filing: 1978-02-27
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Granted: 1979-04-03
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Expires: 1998-02-27
Abstract
Abstract A method of producing epitaxial semiconductor monocrystal materials of silicon carbide with the silicon carbide crystals being grown by crystallizing sublimed silicon carbide vapors.
Inventors
- 👤 Jury A. Vodakov
- 👤 Evgeny N. Mokhov
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 14:34
CPC Classifications
C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/36; H; H10; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2904; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3408; H10P14/3438; H10P14/3441; H10P14/3446
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
112 words
In a method of epitaxially producing semiconductor silicon carbide comprising the steps of: subliming solid silicon carbide to produce silicon carbide vapors and depositing the vapors on seed crystals of silicon carbide, the improvement comprising performing the steps of sublimation and deposition in an inert medium at a temperature of from 1600°-2400° C. and a pressure of from one atmosphere to 10 -5 mm Hg. and arranging the solid silicon carbide and the seed crystals in a parallel relationship at a distance not exceeding 0.2 of the maximum linear dimension of the solid silicon carbide measured in the direction perpendicular to the distance separating the solid silicon carbide and the seed crystals.
Claim 2
Dependent Claim
112 words
In a method of epitaxially producing semiconductor silicon carbide comprising the steps of: subliming solid silicon carbide to produce silicon carbide vapors and depositing the vapors on seed crystals of silicon carbide, the improvement comprising performing the steps of sublimation and deposition in an inert medium at a temperature of from 1600°-2400° C. and a pressure of from one atmosphere to 10 -5 mm Hg. and arranging the solid silicon carbide and the seed crystals in a parallel relationship at a distance not exceeding 0.2 of the maximum linear dimension of the solid silicon carbide measured in the direction perpendicular to the distance separating the solid silicon carbide and the seed crystals.
Claim 3
Dependent Claim
40 words
The method as claimed in claim 1, further comprising performing the step of sublimation in the presence of at least one doping element for silicon carbide selected from the group consisting of Be, B, Al, Ga, Sc, O and N.
Claim 4
Dependent Claim
41 words
The method as claimed in claim 1, wherein the maximum linear dimension of the solid silicon carbide is from 60 to 80 mm and the distance separating the solid silicon carbide and the seed crystals is from 0.6 to 6 mm.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-04-02 | 1982-10-02 | 1983-04-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-04-02 | 1986-10-02 | 1987-04-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-04-02 | 1990-10-02 | 1991-04-03 | $7700.00 | Window Closed / Lapsed |