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US4143389A
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Photoelectric element in a solid-state image pick-up device
Assignee: Hitachi Ltd
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Filing: 1977-08-11
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Granted: 1979-03-06
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Expires: 1997-08-11
Abstract
Abstract In a solid-state image pickup device having photoelectric elements each of which includes one or more switching MOS field-effect transistors and which are arrayed in one dimension or two dimensions on one semiconductor substrate, and scanning circuits which address the photoelectric devices time-sequentially, a transparent or semitransparent electrode is disposed over a light detecting region provided for the switching field-effect transistor, with an insulating oxide film intervening therebetween, whereby a capacitance is formed between the electrode and the substrate, charges generated under the electrode by photoexcitation are stored in a charge-storage region including the capacitance for a certain time, and the stored charges are taken out by the scanning circuits to a signal output line connecting the drains of the transistors in common.
Inventors
- 👤 Norio Koike
- 👤 Masaharu Kubo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 20:53
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/28; H10F30/282; H10F39/00; H10F39/10; H10F39/12; H10F39/18
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
157 words
A photoelectric element in a solid-state image pickup device comprising: a field-effect transistor, disposed in one surface portion of a semiconductor substrate of a first conductivity type, including a source region and a drain region having a second conductivity type opposite to said first conductivity type, a gate insulating film provided so as to cover a portion of said substrate lying between said source region and said drain region, and a gate electrode provided on said gate insulating film, one of said source region and said drain region being larger than the other and constituting, together with said substrate, a photodiode; a transparent insulating oxide film which is provided so as to cover said photodiode; and a transparent electrode which is provided on said insulating oxide film and which permits at least part of incident light to permeate therethrough, said transparent electrode being maintained at a predetermined voltage and forming an electrostatic capacitance with said one region.
Claim 2
Dependent Claim
157 words
A photoelectric element in a solid-state image pickup device comprising: a field-effect transistor, disposed in one surface portion of a semiconductor substrate of a first conductivity type, including a source region and a drain region having a second conductivity type opposite to said first conductivity type, a gate insulating film provided so as to cover a portion of said substrate lying between said source region and said drain region, and a gate electrode provided on said gate insulating film, one of said source region and said drain region being larger than the other and constituting, together with said substrate, a photodiode; a transparent insulating oxide film which is provided so as to cover said photodiode; and a transparent electrode which is provided on said insulating oxide film and which permits at least part of incident light to permeate therethrough, said transparent electrode being maintained at a predetermined voltage and forming an electrostatic capacitance with said one region.
Claim 3
Dependent Claim
39 words
A photoelectric element in a solid-state image pickup device according to claim 1, wherein said transparent electrode is made of a material selected from the group consisting of tin oxide, idium oxide, polycrystalline silicon, and a thin aluminum layer.
Claim 4
Dependent Claim
186 words
A photoelectric element in a solid-state image pickup device comprising: a field-effect transistor, disposed in one surface portion of a semiconductor substrate of a first conductivity type including a first region having a second conductivity type opposite to said first conductivity type, a gate insulating film provided so as to cover a first portion of said substrate adjacent to said first region, a gate electrode provided on said gate insulating film, and a photosensitive second portion of said substrate adjacent to said first portion of said substrate, the entirety of said photosensitive portion being exclusive of second conductivity type semiconductor material; a transparent insulating oxide film which is provided so as to cover said photosensitive region; and a transparent electrode which is provided on said insulating oxide film and which permits at least part of incident light to permeate therethrough, said transparent electrode being maintained at a predetermined voltage and forming a depletion layer in said photosensitive portion, said transparent electrode and said photosensitive portion forming an electrostatic capacitance, said depletion layer functioning as a field-effect transistor together with said first region and said gate electrode.
Claim 5
Dependent Claim
186 words
A photoelectric element in a solid-state image pickup device comprising: a field-effect transistor, disposed in one surface portion of a semiconductor substrate of a first conductivity type including a first region having a second conductivity type opposite to said first conductivity type, a gate insulating film provided so as to cover a first portion of said substrate adjacent to said first region, a gate electrode provided on said gate insulating film, and a photosensitive second portion of said substrate adjacent to said first portion of said substrate, the entirety of said photosensitive portion being exclusive of second conductivity type semiconductor material; a transparent insulating oxide film which is provided so as to cover said photosensitive region; and a transparent electrode which is provided on said insulating oxide film and which permits at least part of incident light to permeate therethrough, said transparent electrode being maintained at a predetermined voltage and forming a depletion layer in said photosensitive portion, said transparent electrode and said photosensitive portion forming an electrostatic capacitance, said depletion layer functioning as a field-effect transistor together with said first region and said gate electrode.
Claim 6
Dependent Claim
40 words
A photoelectric element in a solid-state image pickup device according to claim 3, wherein said transparent electrode is made of a material selected from the group consisting of tin oxide, indium oxide, polycrystalline silicon layer and a thin aluminum layer.
Claim 7
Dependent Claim
32 words
A photoelectric element in a solid-state image pickup device according to claim 3, wherein said transparent electrode is covered with another insulating film, and said gate electrode extends over said transparent electrode.
Claim 8
Dependent Claim
30 words
A photoelectric element in a solid-state image pickup device according to claim 5, wherein the projection of an edge of said gate electrode towards said substrate overlaps said transparent electrode.
Claim 9
Dependent Claim
54 words
A photoelectric element in a solid-state image pickup device according to claim 1, wherein that larger one of said source region and said drain region which forms a photodiode with said substrate extends over the entire extent of the surface of said substrate upon which light is incident by permeation through said transparent electrode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-03-05 | 1982-09-04 | 1983-03-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-03-05 | 1986-09-04 | 1987-03-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-03-05 | 1990-09-04 | 1991-03-06 | $7700.00 | Window Closed / Lapsed |