US3877058A
Expired / Lapsed
US
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Radiation charge transfer memory device
Assignee: Westinghouse Electric Corp
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Filing: 1973-12-13
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Granted: 1975-04-08
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Expires: 1993-12-13
Abstract
Abstract An MNOS radiation charge transfer memory device wherein charge generated in a semiconductor body by radiation is transferred through a surface inversion layer and an oxide layer to a silicon-nitride-oxide interface for storage. The readout voltage is proportional to the charge density stored. Therefore, it is possible to realize a gain proportional to the ratio of the junction sensor area to the nitride-oxide memory gate area. The device may be applied to optically accessed digital or analog memories.
Inventors
- 👤 James R Cricchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:23
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18; G; G11; G11C; G11C13/00; G11C13/04; G11C13/048; G11C16/00; G11C16/02; G11C16/04; G11C16/0466; H10F39/103
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
155 words
A METAL-NITRIDE-OXIDE REDIATION CHARGE TRANSFER MEMORY DEVICE COMPRISING A SUBSTRATE OR SEMICONDUCTOR MATERIAL OF ONE CONDUCTIVITY TYPE, THREE DIFFUSED REGIONS OF OPPOSITE CONDUCTIVITY TYPE IN ONE SURFACE OF SAID SUBSTRATE, ONE OF SAID REGIONS FORMING A RADIATION SENSITIVE P-N JUNCTION WITH THE SUBSTRATE, AN OXIDE LAYER COVERING THE SURFACE OF THE SUBSTRATWEM A NITRIDE LAYER COVERING THE OXIDE LAYER, A FIRST GATE REGION DISPOSED BETWEEN SAID ONE DIFFUSED REGION AND A SECOND OF SAID DIFFUSED REGIONS TO FORM A FIRST TRANSISTOR THEREWITH, A SECOND GATE REGION DISPOSED BETWEEN SAID SECOND DIFFUSED REGION AND THE THIRD DIFFUSED REGION TO FORM A SECOND TRANSISTOR, EACH OF SAID GATE REGIONS COMPRISING A REGION OF REDUCED THICKNESS OF THE OXIDE LAYER AND INCLUDING MEANS FOR MAKING ELECTRICAL CONNECTION TO THE GATE REGION, MEANS FOR MAKING ELECTRICAL CONNECTION TO THE SUBSTRATE, AND CONDUCTING MEANS EXTENDING THROUGH SAID OXIDE AND NITRIDE LAYERS FOR MAKING ELECTRICAL CONNECTION TO SAID THIRD DIFFUSED REGION.
Claim 2
Dependent Claim
155 words
A METAL-NITRIDE-OXIDE REDIATION CHARGE TRANSFER MEMORY DEVICE COMPRISING A SUBSTRATE OR SEMICONDUCTOR MATERIAL OF ONE CONDUCTIVITY TYPE, THREE DIFFUSED REGIONS OF OPPOSITE CONDUCTIVITY TYPE IN ONE SURFACE OF SAID SUBSTRATE, ONE OF SAID REGIONS FORMING A RADIATION SENSITIVE P-N JUNCTION WITH THE SUBSTRATE, AN OXIDE LAYER COVERING THE SURFACE OF THE SUBSTRATWEM A NITRIDE LAYER COVERING THE OXIDE LAYER, A FIRST GATE REGION DISPOSED BETWEEN SAID ONE DIFFUSED REGION AND A SECOND OF SAID DIFFUSED REGIONS TO FORM A FIRST TRANSISTOR THEREWITH, A SECOND GATE REGION DISPOSED BETWEEN SAID SECOND DIFFUSED REGION AND THE THIRD DIFFUSED REGION TO FORM A SECOND TRANSISTOR, EACH OF SAID GATE REGIONS COMPRISING A REGION OF REDUCED THICKNESS OF THE OXIDE LAYER AND INCLUDING MEANS FOR MAKING ELECTRICAL CONNECTION TO THE GATE REGION, MEANS FOR MAKING ELECTRICAL CONNECTION TO THE SUBSTRATE, AND CONDUCTING MEANS EXTENDING THROUGH SAID OXIDE AND NITRIDE LAYERS FOR MAKING ELECTRICAL CONNECTION TO SAID THIRD DIFFUSED REGION.
Claim 3
Dependent Claim
56 words
The device of claim 1 in which each of said gate regions consists of an opening extending through the nitride layer and part way through the oxide layer, a nitride layer covering the oxide layer at the bottom of the opening, and a metallic electrode filling the opening to make electrical connection to the gate region.
Claim 4
Dependent Claim
86 words
The device of claim 1 and including means for applying a bias voltage across said first gate region to reset the device and for reversing said voltage to effect charge storage at the interface of the oxide and nitride layers as determined by the current through said junction, means for applying a voltage to said second gate region to make said second transistor conductive, and means for connecting a readout device to said third diffused region to sense a readout current determined by said stored charge.
Claim 5
Dependent Claim
24 words
The device of claim 3 and including means for connecting a voltage source to said third diffused region while the second transistor is conductive.
Claim 6
Dependent Claim
27 words
The device of claim 1 having a transparent electrode on the nitride layer adjacent said first gate region, and means for making electrical connection to said electrode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-04-07 | 1978-10-07 | 1979-04-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-04-07 | 1982-10-07 | 1983-04-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-04-07 | 1986-10-07 | 1987-04-08 | $7700.00 | Window Closed / Lapsed |