Patent US4139858A successfully refreshed from Google Patents.
US4139858A
Expired / Lapsed
US
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Solar cell with a gallium nitride electrode
Assignee: RCA Corp
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Filing: 1977-12-12
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Granted: 1979-02-13
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Expires: 1997-12-12
Abstract
Abstract A solar cell which comprises a body of silicon having a P-N junction therein with a transparent conducting N-type gallium nitride layer as an ohmic contact on the N-type side of the semiconductor exposed to solar radiation.
Inventors
- 👤 Jacques I. Pankove
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 18:28
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/20; H10F77/244; Y; Y10; Y10S; Y10S148/00; Y10S148/059; Y10S148/113
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
49 words
A semiconductor photovoltaic device comprising: a body of semiconductor material; means in said body for defining a P-N junction, said means including an N-type layer having a surface; and a transparent, conductive gallium nitride electrode layer on said surface contacting said N-type region and forming an ohmic contact thereto.
Claim 2
Dependent Claim
49 words
A semiconductor photovoltaic device comprising: a body of semiconductor material; means in said body for defining a P-N junction, said means including an N-type layer having a surface; and a transparent, conductive gallium nitride electrode layer on said surface contacting said N-type region and forming an ohmic contact thereto.
Claim 3
Dependent Claim
24 words
The semiconductor photovoltaic device according to claim 1 wherein the gallium nitride electrode layer is from about 1 μm to about 20 μms thick.
Claim 4
Dependent Claim
21 words
The semiconductor photovoltaic device according to claim 2 further comprising a metal electrode contacting the P-type layer of said semiconductor body.
Claim 5
Dependent Claim
36 words
The semiconductor photovoltaic device according to claim 3 wherein said semiconductor body is formed from material selected from the group consisting of crystalline silicon, hydrogenated amorphous silicon, cadmium telluride, gallium arsenide, and gallium arsenide-aluminum arsenide alloys.
Claim 6
Dependent Claim
53 words
A semiconductor photovoltaic device comprising a substrate, a transparent conductive N-type gallium nitride electrode layer deposited on said substrate, forming a heterotransition and ohmic contact with the N-type layer of a semiconductor body having an N-type and a P-type layer forming a P-N junction therebetween and a metal electrode contacting said P-type layer.
Claim 7
Dependent Claim
53 words
A semiconductor photovoltaic device comprising a substrate, a transparent conductive N-type gallium nitride electrode layer deposited on said substrate, forming a heterotransition and ohmic contact with the N-type layer of a semiconductor body having an N-type and a P-type layer forming a P-N junction therebetween and a metal electrode contacting said P-type layer.
Claim 8
Dependent Claim
24 words
A semiconductor photovoltaic device in accordance with claim 5, wherein said gallium nitride layer is from about 1 μm to about 20 μms thick.
Claim 9
Dependent Claim
59 words
A semiconductor photovoltaic device comprising a semiconductor material which is stable at 900° C. and which is doped to form N and P type layers, thereby forming a P-N junction therebetween, a metal electrode contacting said P-type portion of said semiconductor and an N-type transparent, conductive gallium nitride electrode layer forming an ohmic contact with said N-type semiconductor layer.
Claim 10
Dependent Claim
59 words
A semiconductor photovoltaic device comprising a semiconductor material which is stable at 900° C. and which is doped to form N and P type layers, thereby forming a P-N junction therebetween, a metal electrode contacting said P-type portion of said semiconductor and an N-type transparent, conductive gallium nitride electrode layer forming an ohmic contact with said N-type semiconductor layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-02-12 | 1982-08-14 | 1983-02-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-02-12 | 1986-08-14 | 1987-02-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-02-12 | 1990-08-14 | 1991-02-13 | $7700.00 | Window Closed / Lapsed |