US4137099A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of controlling leakage currents and reverse recovery time of rectifiers by hot electron irradiation and post-annealing treatments
Assignee: General Electric Co
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Filing: 1977-07-11
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Granted: 1979-01-30
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Expires: 1997-07-11
Abstract
Abstract High speed semiconductor rectifiers are fabricated by providing a rectifier, increasing the temperature thereof to a relatively high value, irradiating the rectifier with high energy lattice-damage causing particles while maintaining the relatively high temperature, and annealing the irradiated rectifier at a temperature and for a time sufficient to decrease the leakage current of the rectifier to a low value without substantially increasing the reverse recovery time of the rectifier.
Inventors
- 👤 Yen S. E. Sun
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 06:22
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P95/00; H10P95/90; Y; Y10; Y10S; Y10S148/00; Y10S148/046
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
96 words
A method for making a high speed semiconductor rectifier characterized by low leakage current and short reverse recovery time comprising the steps of: fabricating a rectifier; heating said rectifier to a temperature of about 300° C.; irradiating said rectifier while maintaining the temperature of said rectifier at about 300° C.; and then annealing said rectifier at a temperature of between about 280° and 350° C. for a time between about two and about ten hours selected to decrease the leakage current while at the same time increasing the reverse recovery time by a relatively lesser amount.
Claim 2
Independent Claim
96 words
A method for making a high speed semiconductor rectifier characterized by low leakage current and short reverse recovery time comprising the steps of: fabricating a rectifier; heating said rectifier to a temperature of about 300° C.; irradiating said rectifier while maintaining the temperature of said rectifier at about 300° C.; and then annealing said rectifier at a temperature of between about 280° and 350° C. for a time between about two and about ten hours selected to decrease the leakage current while at the same time increasing the reverse recovery time by a relatively lesser amount.
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein said irradiation step comprises irradiating said rectifier with electrons having energies between about 0.4 and 12 MeV.
Claim 4
Dependent Claim
20 words
The method of claim 1 wherein said annealing step comprises annealing said rectifier for between about three and six hours.
Claim 5
Dependent Claim
29 words
The method of claim 2 wherein said irradiation step comprises irradiation for between about 20 and 60 seconds at a flux rate of about 5×10 12 e/cm 2 sec.
Claim 6
Dependent Claim
24 words
The method of claim 2 wherein said irradiation step comprises irradiation to a concentration of between 10 13 and 10 16 e/cm 2 .
Claim 7
Dependent Claim
20 words
The method of claim 4 wherein said annealing step comprises annealing said rectifier for between about three and six hours.
Claim 8
Dependent Claim
18 words
The method of claim 3 wherein said annealing step comprises annealing at a temperature of about 310° C.
Claim 9
Dependent Claim
18 words
The method of claim 6 wherein said annealing step comprises annealing at a temperature of about 310° C.
Claim 10
Independent Claim
85 words
A method for improving the operating characteristics of a high speed semiconductor rectifier comprising: providing a rectifier; heating said rectifier to a temperature of between about 250 and 350° C.; irradiating said rectifier while maintaining said temperature between about 250 and 350° C.; annealing said rectifier at a temperature between 290 and 310° C. for a time between about two and about ten hours selected to decrease the leakage current while at the same time increasing the reverse recovery time by a relatively lesser amount.
Claim 11
Independent Claim
85 words
A method for improving the operating characteristics of a high speed semiconductor rectifier comprising: providing a rectifier; heating said rectifier to a temperature of between about 250 and 350° C.; irradiating said rectifier while maintaining said temperature between about 250 and 350° C.; annealing said rectifier at a temperature between 290 and 310° C. for a time between about two and about ten hours selected to decrease the leakage current while at the same time increasing the reverse recovery time by a relatively lesser amount.
Claim 12
Dependent Claim
25 words
The method of claim 9 wherein said irradiating step comprises irradiating said rectifier with electrons at an energy of between about 0.4 and 12 MeV.
Claim 13
Dependent Claim
30 words
The method of claim 10 wherein said irradiating comprises irradiating said rectifier for between about 30 and 50 seconds at a flux rate of about 4.7×10 12 e/cm 2 sec.
Claim 14
Dependent Claim
27 words
The method of claim 10 wherein irradiating said rectifiers comprises irradiating said rectifier to a concentration of between about 10 14 and 10 15 e/cm 2 .
Claim 15
Dependent Claim
17 words
The method of claim 12 wherein said annealing comprises annealing for between about 3 and 6 hours.
Claim 16
Dependent Claim
17 words
The method of claim 13 wherein said annealing comprises annealing at a temperature of about 310° C.
References Cited (Backward Citations)
US3894890A
Cited
US3888701A
Cited
US3933527A
Cited
US4056408A
Cited
US4043836A
Cited
US4047976A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-01-29 | 1982-07-31 | 1983-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-01-29 | 1986-07-31 | 1987-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-01-29 | 1990-07-31 | 1991-01-30 | $7700.00 | Window Closed / Lapsed |