US4043836A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor devices
Assignee: General Electric Co
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Filing: 1976-05-03
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Granted: 1977-08-23
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Expires: 1996-05-03
Abstract
Abstract Disclosed is a method of manufacturing semiconductor devices including a step of irradiating the devices to alter the turnoff and forward drop characteristics thereof. The irradiation is carried out at a temperature above 100° C, and preferably in the range of 150° to 375° C. No post irradiation annealing step is required.
Inventors
- 👤 Yen Sheng Edmund Sun
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:35
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; Y; Y10; Y10S; Y10S148/00; Y10S148/046
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
56 words
A method of adjusting the electrical characteristics of a semiconductor device comprising forming deep level recombination centers by subjecting the monocrystalline semiconductor material of said device at a temperature in the range of about 150° to 375° C to impact by crystal lattice-damaging electrons (with irradiation) of an energy level in excess of about 250 Kev.
Claim 2
Independent Claim
56 words
A method of adjusting the electrical characteristics of a semiconductor device comprising forming deep level recombination centers by subjecting the monocrystalline semiconductor material of said device at a temperature in the range of about 150° to 375° C to impact by crystal lattice-damaging electrons (with irradiation) of an energy level in excess of about 250 Kev.
Claim 3
Dependent Claim
26 words
A method according to claim 1 wherein said device (is selected from the group consisting of SCRs, rectifiers, and triacs) contains at least one P/N junction.
Claim 4
Dependent Claim
33 words
A method according to claim 1 wherein said (radiation is electron irradiation and is) electrons are supplied by irradiation of an energy level in the range of about 1.5 to about 12 Mev.
Claim 5
Dependent Claim
36 words
A method according to claim 3 wherein the dosage of irradiation applied is in the range of about 5 × 10 12 electrons per cubic centimeter to about 5 × 10 15 electrons per cubic centimeter.
Claim 6
Independent Claim
68 words
A method of adjusting the electrical characteristics of a semiconductor device comprising subjecting said device to electron irradiation of an energy in the range of about 1.5 to about 12 Mev at a temperature in the range of 150° to 375° C until a dosage of about 5 × 10 12 electrons per cubic centimeter to about 5 × 10 15 electrons per cubic centimeter has been obtained.
Claim 7
Independent Claim
68 words
A method of adjusting the electrical characteristics of a semiconductor device comprising subjecting said device to electron irradiation of an energy in the range of about 1.5 to about 12 Mev at a temperature in the range of 150° to 375° C until a dosage of about 5 × 10 12 electrons per cubic centimeter to about 5 × 10 15 electrons per cubic centimeter has been obtained.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-08-22 | 1981-02-21 | 1981-08-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-08-22 | 1985-02-21 | 1985-08-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-08-22 | 1989-02-21 | 1989-08-23 | $7700.00 | Window Closed / Lapsed |