US4134122A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Hyperfrequency device with gunn effect
Assignee: Thales SA
•
Filing: 1978-01-26
•
Granted: 1979-01-09
•
Expires: 1998-01-26
Abstract
Abstract In a Gunn effect device the cathode contact is formed by an assembly of zones through which is effected the injection of current adjoining an assembly of zones which on the contrary are capable of blocking this injection. A layer of dielectric material possibly insulates these two types of zones. A metallic control electrode assures the arrival of the current. The respective dimensions of these zones are determined in such manner that, in operation, the injected current is channeled between parts of the device made dielectric by the creation of space charges.
Inventors
- 👤 Paul C. Moutou
- 👤 Jean-Jacques Godart
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 08:59
CPC Classifications
H; H10; H10N; H10N80/00; H10N80/10; H10N80/107
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
114 words
Gunn effect hyperfrequency device comprising an active layer formed of a semiconductor material deposited on a strongly doped substrate of the same type of conductivity, a first anode contact formed by said substrate, and a second cathode contact, wherein said cathode contact comprises a mosaic of conducting zones A adjoining zones B capable of blocking the injection of the current, the respective dimensions of the said zones being such that zones of space charges capable of reaching said substrate are developed and define a plurality of channels, each having a controlled transverse dimension d, the product n.d, being lower than 10. 11 cm -2 , n being the doping concentration in said active layer.
Claim 2
Dependent Claim
114 words
Gunn effect hyperfrequency device comprising an active layer formed of a semiconductor material deposited on a strongly doped substrate of the same type of conductivity, a first anode contact formed by said substrate, and a second cathode contact, wherein said cathode contact comprises a mosaic of conducting zones A adjoining zones B capable of blocking the injection of the current, the respective dimensions of the said zones being such that zones of space charges capable of reaching said substrate are developed and define a plurality of channels, each having a controlled transverse dimension d, the product n.d, being lower than 10. 11 cm -2 , n being the doping concentration in said active layer.
Claim 3
Dependent Claim
11 words
Device according to claim 1, wherein said semiconductor consists of GaAs.
Claim 4
Dependent Claim
23 words
Device according to claim 1, further comprising a metallic control electrode deposited on the said mosaic and assuring the conduction of the current.
Claim 5
Dependent Claim
40 words
Device according to claim 1, wherein said zones A are formed by a first metallic deposit, said zones B by a second metallic deposit brought into contact with the said active layer and forming with the latter a Schottky barrier.
Claim 6
Dependent Claim
28 words
Device according to claim 3, wherein said active layer is of N type, the said zones B are of P type and the said zones A are metallic.
Claim 7
Dependent Claim
32 words
Semiconductor device according to claim 1, wherein said active layer is of N type, said zones B are of P type and said zones A are of strongly doped N + type.
Claim 8
Dependent Claim
22 words
Semiconductor device according to claim 1, wherein a layer of dielectric material insulates the said zones A from the said zones B.
Claim 9
Dependent Claim
30 words
Semiconductor device according to claim 7, wherein said zones A comprise biasing connection to a first potential d.c supply, the said zones B having connection to a second d.c supply.
References Cited (Backward Citations)
US3252003A
Cited
US3541404A
Cited
US3667010A
Cited
GB1266154A
Cited
US3600705A
Cited
US3609473A
Cited
US3991328A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-01-08 | 1982-07-10 | 1983-01-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-01-08 | 1986-07-10 | 1987-01-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-01-08 | 1990-07-10 | 1991-01-09 | $7700.00 | Window Closed / Lapsed |