Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
140 words
A semiconductor device for generating a plurality of frequencies comprising: a chip of semiconductor material formed of group III-V elements having opposed surfaces and a current axis therebetween, said material having an inner region of one conductivity and an outer region of different conductivity with a junction formed therebetween; said inner region, said outer region, and said junction all forming cylinders and disposed with respect to said current axis; wherein one of said regions includes variable doPing to cause a resistivity gradient from one surface to the opposing surface of said region; means connected to said opposed surfaces for applying a potential to one of said regions to create an electric field gradient along said current axis; and further means connected to the other of said regions for biasing said junction to control the length of said electric field gradient.
Claim 2
Dependent Claim
140 words
A semiconductor device for generating a plurality of frequencies comprising: a chip of semiconductor material formed of group III-V elements having opposed surfaces and a current axis therebetween, said material having an inner region of one conductivity and an outer region of different conductivity with a junction formed therebetween; said inner region, said outer region, and said junction all forming cylinders and disposed with respect to said current axis; wherein one of said regions includes variable doPing to cause a resistivity gradient from one surface to the opposing surface of said region; means connected to said opposed surfaces for applying a potential to one of said regions to create an electric field gradient along said current axis; and further means connected to the other of said regions for biasing said junction to control the length of said electric field gradient.
Claim 3
Dependent Claim
14 words
The device as defined in claim 1 wherein said semiconductor material is gallium arsenide.
Claim 4
Dependent Claim
14 words
The device as defined in claim 1 wherein said semiconductor material is indium phosphide.
Claim 5
Dependent Claim
111 words
An analog to digital converter comprising a chip of semiconductor material formed of group III-V elements having opposed surfaces and a current axis therebetween, said chip being of one conductivity type and which includes variable doping to cause a resistivity gradient from one surface to the opposing surface, a plurality of annular regions of different conductivity type formed about said chip, each of said regions forming a junction with said chip, means coupled to said opposed surfaces for applying a potential to said chip to create an electric field gradient along said current axis, and means for applying potentials to said regions for controlling the length of the electric field gradient.
Claim 6
Dependent Claim
111 words
An analog to digital converter comprising a chip of semiconductor material formed of group III-V elements having opposed surfaces and a current axis therebetween, said chip being of one conductivity type and which includes variable doping to cause a resistivity gradient from one surface to the opposing surface, a plurality of annular regions of different conductivity type formed about said chip, each of said regions forming a junction with said chip, means coupled to said opposed surfaces for applying a potential to said chip to create an electric field gradient along said current axis, and means for applying potentials to said regions for controlling the length of the electric field gradient.