US3609473A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Two-layer metallized high frequency transistor employing extended contacts to shield input terminal from output terminal and mounted in a coaxial cable
Assignee: Fairchild Semiconductor Corp
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Filing: 1969-09-02
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Granted: 1971-09-28
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Expires: 1989-09-02
Abstract
Abstract The base and emitter contacts to a high frequency transistor are formed of two separate layers of metallization separated by an intervening dielectric. Either the base or the emitter lead is formed into a circular beam diaphragm, portions of which extend beyond the semiconductor chip. This circular lead mates around its external edge with an internal diaphragm in a coaxial package to form either the base or emitter connection to the transistor.
Inventors
- 👤 Charles A Bittmann
- 👤 Gary W Parker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 23:41
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10D; H10D99/00; H10W72/00
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-09-27 | 1975-03-29 | 1975-09-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-09-27 | 1979-03-29 | 1979-09-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-09-27 | 1983-03-29 | 1983-09-28 | $7700.00 | Window Closed / Lapsed |