US4126732A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Surface passivation of IV-VI semiconductors with As2 S3
Assignee: United States Department of the Navy
•
Filing: 1977-08-16
•
Granted: 1978-11-21
•
Expires: 1997-08-16
Abstract
Abstract The process of coating epitaxial films of lead chalcogenide materials with As2S3 to insulate the films from the effects of oxygen upon exposure to air.
Inventors
- 👤 Richard B. Schoolar
- 👤 James D. Jensen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 02:20
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10D; H10D62/00; H10D62/80; H10D62/874; H10W; H10W74/00; H10W74/10; H10W74/111; H10W74/40; Y; Y10; Y10S; Y10S438/00; Y10S438/958
Claims Analysis
Total Claims: 63
Claim 1
Independent Claim
38 words
A process for preparing a semiconductor device of a lead chalcogenide, comprising: evaporating in a vacuum a film of a lead chalcogenide on a substrate; and, then coating in the vacuum the element so produced with arsenic trisulfide.
Claim 2
Dependent Claim
38 words
A process for preparing a semiconductor device of a lead chalcogenide, comprising: evaporating in a vacuum a film of a lead chalcogenide on a substrate; and, then coating in the vacuum the element so produced with arsenic trisulfide.
Claim 3
Dependent Claim
21 words
The process set forth in claim 1 wherein the element is maintained at a temperature less than 100° C. during coating.
Claim 4
Dependent Claim
21 words
The process set forth in claim 1 wherein the element so produced has not more than 1·10 13 ionized surface states.
Claim 5
Dependent Claim
21 words
The process set forth in claim 2 wherein the element so produced has not more than 1·10 13 ionized surface states.
Claim 6
Dependent Claim
43 words
A process for preparing an element from a lead chalcogenide, comprising: evaporating in a vacuum a film of a lead chalcogenide as a substrate; cooling in the vacuum the element so produced; and, then coating in the vacuum the element with arsenic trisulfide.
Claim 7
Dependent Claim
43 words
A process for preparing an element from a lead chalcogenide, comprising: evaporating in a vacuum a film of a lead chalcogenide as a substrate; cooling in the vacuum the element so produced; and, then coating in the vacuum the element with arsenic trisulfide.
Claim 8
Dependent Claim
19 words
The process set forth in claim 5 wherein the element is cooled to a temperature less than 100° C.
Claim 9
Dependent Claim
21 words
The process set forth in claim 5 wherein the element is maintained at a temperature less than 100° C. during coating.
Claim 10
Dependent Claim
21 words
The process set forth in claim 6 wherein the element is maintained at a temperature less than 100° C. during coating.
Claim 11
Dependent Claim
37 words
A process for passivating an element prepared from a lead chalcogenide, comprising: annealing the element in a closed container from which all air has been removed; and, then coating the element in the vacuum with arsenic trisulfide.
Claim 12
Dependent Claim
37 words
A process for passivating an element prepared from a lead chalcogenide, comprising: annealing the element in a closed container from which all air has been removed; and, then coating the element in the vacuum with arsenic trisulfide.
Claim 13
Dependent Claim
21 words
The process set forth in claim 9 wherein the element is maintained at a temperature less than 100° C. during coating.
Claim 14
Dependent Claim
40 words
A process for passivating an element prepared from a lead chalcogenide, comprising: annealing the element in a closed container from which all air has been removed; and, then coating the element with arsenic trisulfide before exposing the element to air.
Claim 15
Dependent Claim
40 words
A process for passivating an element prepared from a lead chalcogenide, comprising: annealing the element in a closed container from which all air has been removed; and, then coating the element with arsenic trisulfide before exposing the element to air.
Claim 16
Dependent Claim
21 words
The process set forth in claim 11 wherein the element is maintained at a temperature less than 100° C. during coating.
Claim 17
Dependent Claim
43 words
A process for passivating an element prepared from a lead chalcogenide, comprising: annealing the element in a closed container from which all air has been removed; cooling the element in the vacuum; and, then coating the element in the vacuum with arsenic trisulfide.
Claim 18
Dependent Claim
43 words
A process for passivating an element prepared from a lead chalcogenide, comprising: annealing the element in a closed container from which all air has been removed; cooling the element in the vacuum; and, then coating the element in the vacuum with arsenic trisulfide.
Claim 19
Dependent Claim
21 words
The process set forth in claim 13 wherein the element is maintained at a temperature less than 100° C. during coating.
Claim 20
Dependent Claim
26 words
The process set forth in claim 13 wherein the element is maintained at a temperature between four degrees Kelvin and one hundred degrees Celsius during coating.
Claim 21
Dependent Claim
10 words
The product of the process set forth in claim 15.
Claim 22
Dependent Claim
59 words
A semiconductor device, comprising: a lead chalcogenide member having a first type conductivity; the member having at least one major surface; a region of second and opposite type conductivity disposed into the member; the region having an end surface coplanar with one major surface; and a layer of arsenic trisulfide disposed on the major surface about the end surface.
Claim 23
Dependent Claim
59 words
A semiconductor device, comprising: a lead chalcogenide member having a first type conductivity; the member having at least one major surface; a region of second and opposite type conductivity disposed into the member; the region having an end surface coplanar with one major surface; and a layer of arsenic trisulfide disposed on the major surface about the end surface.
Claim 24
Dependent Claim
33 words
A lead chalcogenide semiconductor device with a passivating coating comprising arsenic trisulfide in direct, intimate contact with the surface of the device, the coating being formed by a low temperature vacuum evaporation process.
Claim 25
Dependent Claim
33 words
A lead chalcogenide semiconductor device with a passivating coating comprising arsenic trisulfide in direct, intimate contact with the surface of the device, the coating being formed by a low temperature vacuum evaporation process.
Claim 26
Dependent Claim
51 words
A lead chalcogenide semiconductor device with a passivating coating comprising arsenic trisulfide in direct, intimate contact with the surface of the device, the coating being formed by a low temperature vacuum evaporation process and having a thickness of approximately one-quarter wavelength of the electromagnetic energy to which the device is responsive.
Claim 27
Dependent Claim
51 words
A lead chalcogenide semiconductor device with a passivating coating comprising arsenic trisulfide in direct, intimate contact with the surface of the device, the coating being formed by a low temperature vacuum evaporation process and having a thickness of approximately one-quarter wavelength of the electromagnetic energy to which the device is responsive.
Claim 28
Dependent Claim
74 words
A semiconductor element, comprising: a body of semiconductor material having at least two regions of opposite type conductivity with a P-N junction disposed between, and formed by the abutting surfaces of, each pair of regions of opposite type conductivity; an end portion of at least one P-N junction exposed at a surface of the body; and, a coating of arsenic trisulfide disposed on the exposed end portion of the at least one P-N junction.
Claim 29
Dependent Claim
74 words
A semiconductor element, comprising: a body of semiconductor material having at least two regions of opposite type conductivity with a P-N junction disposed between, and formed by the abutting surfaces of, each pair of regions of opposite type conductivity; an end portion of at least one P-N junction exposed at a surface of the body; and, a coating of arsenic trisulfide disposed on the exposed end portion of the at least one P-N junction.
Claim 30
Dependent Claim
15 words
The element set forth in claim 20 further comprised of the coating encapsulating the body.
Claim 31
Dependent Claim
15 words
The element set forth in claim 20 wherein the material consists of a lead chalcogenide.
Claim 32
Dependent Claim
15 words
The element set forth in claim 22 further composed of the coating encapsulating the body.
Claim 33
Dependent Claim
36 words
The element set forth in claim 23 wherein the material is selected from the group consisting of: PbS; PbSe, PbTe; PbSnS; PbSnSe; PbSnTe; PbCdS; PbCdSe; PbCdTe; PbSSe; PbSeTe; PbSnSSe; PbSnSTe; PbCdSSe; PbCdSTe; PbCdSeTe; and, mixtures thereof.
Claim 34
Dependent Claim
37 words
The process set forth in claim 1 wherein the lead chalcogenide is selected from the group consisting of: PbS; PbSe; PbTe; PbSnS; PbSnSe; PbSnTe; PbCdS; PbCdSe; PbCdTe; PbSSe; PbSeTe; PbSnSSe; PbSnSTe; PbCdSSe; PbCdSTe; PbCdSeTe; and, mixtures thereof.
Claim 35
Dependent Claim
22 words
The process set forth in claim 1, further comprising: removing moisture and oxides from the arsenic trisulfide prior to coating the element.
Claim 36
Dependent Claim
20 words
The process set forth in claim 1, further comprising: cooling the film to room temperature prior to coating the element.
Claim 37
Dependent Claim
26 words
The process set forth in claim 1, further comprising: exposing the film to atmosphere; and prior to coating the element, annealing the film in a vacuum.
Claim 38
Dependent Claim
14 words
The process set forth in claim 1 wherein the film is an epitaxial layer.
Claim 39
Dependent Claim
37 words
The process set forth in claim 5 wherein the lead chalcogenide is selected from the group consisting of: PbS; PbSe; PbTe; PbSnS; PbSnSe; PbSnTe; PbCdS; PbCdSe; PbCdTe; PbSSe; PbSeTe; PbSnSSe; PbSnSTe; PbCdSSe; PbCdSTe; PbCdSeTe; and, mixtures thereof;
Claim 40
Dependent Claim
22 words
The process set forth in claim 5, further comprising: removing moisture and oxides from the arsenic trisulfide prior to coating the element.
Claim 41
Dependent Claim
20 words
The process set forth in claim 5, further comprising: cooling the film to room temperature prior to coating the element.
Claim 42
Dependent Claim
30 words
The process set forth in claim 5, further comprising: after evaporating, exposing the film to atmosphere; and prior to cooling and coating the element, annealing the film in a vacuum.
Claim 43
Dependent Claim
14 words
The process set forth in claim 5 wherein the film is an epitaxial layer.
Claim 44
Dependent Claim
37 words
The process set forth in claim 9 wherein the lead chalcogenide is selected from the group consisting of: PbS; PbSe; PbTe; PbSnS; PbSnSe; PbSnTe; PbCdS; PbCdSe; PbCdTe; PbSSe; PbSeTe; PbSnSSe; PbSnSTe; PbCdSSe; PbCdSTe; PbCdSeTe; and, mixtures thereof.
Claim 45
Dependent Claim
22 words
The process set forth in claim 9, further comprising: removing moisture and oxides from the arsenic trisulfide prior to coating the element.
Claim 46
Dependent Claim
23 words
The process set forth in claim 9 further comprising: after annealing but prior to coating the element, cooling the film to room temperature.
Claim 47
Dependent Claim
14 words
The process set forth in claim 9 wherein the element is an epitaxial layer.
Claim 48
Dependent Claim
37 words
The process set forth in claim 11 wherein the lead chalcogenide is selected from the group consisting of: PbS; PbSe; PbTe; PbSnS; PbSnSe; PbSnTe; PbCdS; PbCdSe; PbCdTe; PbSSe; PbSeTe; PbSnSSe; PbSnSTe; PbCdSSe; PbCdSTe; PbCdSeTe; and, mixtures thereof.
Claim 49
Dependent Claim
22 words
The process set forth in claim 11, further comprising: removing moisture and oxides from the arsenic trisulfide prior to coating the element.
Claim 50
Dependent Claim
23 words
The process set forth in claim 11, further comprising: cooling the film to room temperature after annealing but prior to coating the element.
Claim 51
Dependent Claim
14 words
The process set forth in claim 11 wherein the element is an epitaxial layer.
Claim 52
Dependent Claim
37 words
The process set forth in claim 13 wherein the lead chalcogenide is selected from the group consisting of: PbS; PbSe; PbTe; PbSnS; PbSnSe; PbSnTe; PbCdS; PbCdSe; PbCdTe; PbSSe; PbSeTe; PbSnSSe; PbSnSTe; PbCdSSe; PbCdSTe; PbCdSeTe; and, mixtures thereof.
Claim 53
Dependent Claim
22 words
The process set forth in claim 13, further comprising: removing moisture and oxides from the arsenic trisulfide prior to coating the element.
Claim 54
Dependent Claim
22 words
The process set forth in claim 13, further comprising: after annealing but before coating the element, cooling the element to room temperature.
Claim 55
Dependent Claim
14 words
The process set forth in claim 13 wherein the element is an epitaxial layer.
Claim 56
Dependent Claim
37 words
The device set forth in claim 18 wherein the lead chalcogenide is selected from the group consisting of: PbS; PbSe; PbTe; PbSnS; PbSnSe; PbSnTe; PbCdS; PbCdSe; PbCdTe; PbSSe; PbSeTe; PbSnSSe; PbSnSTe; PbCdSSe; PbCdSTe; PbCdSeTe; and, mixtures thereof.
Claim 57
Dependent Claim
37 words
The device set forth in claim 19 wherein the lead chalcogenide is selected from the group consisting of: PbS; PbSe; PbTe; PbSnS; PbSnSe; PbSnTe; PbCdS; PbCdSe; PbCdTe; PbSSe; PbSeTe; PbSnSSe; PbSnSTe; PbCdSSe; PbCdSTe; PbCdSeTe; and, mixtures thereof.
Claim 58
Dependent Claim
70 words
A semiconductor device, comprising: a lead chalcogenide member having a volume of first type conductivity; the member having at least one major surface; a region of second and opposite type conductibity disposed into the volume; a P-N junction formed by contiguous surfaces of the region and the volume; the junction extending to one major surface; and a layer of arsenic trisulfide disposed on the major surface and covering the junction.
Claim 59
Dependent Claim
70 words
A semiconductor device, comprising: a lead chalcogenide member having a volume of first type conductivity; the member having at least one major surface; a region of second and opposite type conductibity disposed into the volume; a P-N junction formed by contiguous surfaces of the region and the volume; the junction extending to one major surface; and a layer of arsenic trisulfide disposed on the major surface and covering the junction.
Claim 60
Dependent Claim
75 words
A semiconductor device, comprising: a lead chalcogenide member having a volume of first type conductivity; the member having at least one major surface; a region of second and opposite type conductivity disposed into the volume; the region having an end surface coplanar with one major surface; an electrical contact affixed to the end surface; and a coating of arsenic trisulfide disposed on the one major surface, on the electrical contact, and about the end surface.
Claim 61
Dependent Claim
75 words
A semiconductor device, comprising: a lead chalcogenide member having a volume of first type conductivity; the member having at least one major surface; a region of second and opposite type conductivity disposed into the volume; the region having an end surface coplanar with one major surface; an electrical contact affixed to the end surface; and a coating of arsenic trisulfide disposed on the one major surface, on the electrical contact, and about the end surface.
Claim 62
Dependent Claim
18 words
The device set forth in claim 50 wherein the electrical contact is in ohmic contact with the region.
Claim 63
Dependent Claim
18 words
The device set forth in claim 50 wherein the electrical contact is in non-ohmic contact with the region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-11-20 | 1982-05-22 | 1982-11-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-11-20 | 1986-05-22 | 1986-11-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-11-20 | 1990-05-22 | 1990-11-21 | $7700.00 | Window Closed / Lapsed |