US3705059A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Methods of producing p-typeness and p-n junctions in wide band gap semiconductor materials
Assignee: Zenith Electronics LLC
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Filing: 1971-02-25
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Granted: 1972-12-05
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Expires: 1991-02-25
Abstract
Abstract TO PRODUCE A P-CONDUCTIVITY TYPE WIDE BAND GAP SEMICONDUCTOR MATERIAL, A III-V COMPOUND SEMICONDUCTOR LAYER IS FIRST VACUUM EVAPORATED ONTO AND THEN DIFFUSED INTO A CRYSTALLINE II-VI COMPOUND SEMICONDUCTOR SUBSTRATE, SPECIFICALLY A ZINC CHALCOGENIDE. THE RESULTING HYBRID CRYSTALLINE MATERIAL IS DOPED BY SIMULTANEOUS OR SEQUENTIAL INFUSION OF ZINC ATOMS IN SUBSTITUTION FOR ATOMS OF THE GROUP III ELEMENT. THE PROCESS MAY BE USED FOR THE DIRECT PRODUCTION OF P-N JUNCTIONS IN ZINC CHALOGENIDES BY EMPLOYING AN N-TYPE RATHER THAN AN INTRINSIC SUBSTRATE.
Inventors
- 👤 Zoltan K Kun
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 07:49
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823; H10H20/8232; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/17; Y; Y10; Y10S; Y10S148/00; Y10S148/005; Y10S148/03; Y10S148/064; Y10S148/169
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-12-05 | 1976-06-05 | 1976-12-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-12-05 | 1980-06-05 | 1980-12-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-12-05 | 1984-06-05 | 1984-12-05 | $7700.00 | Window Closed / Lapsed |