Patent US4100879A successfully refreshed from Google Patents.
US4100879A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Device for epitaxial growing of semiconductor periodic structures from gas phase
Assignee: Individual
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Filing: 1977-02-08
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Granted: 1978-07-18
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Expires: 1997-02-08
Abstract
Abstract A device in which a reaction vessel is filled with a gas, and in which first and second equal and coaxial disks are located. They have parallel operational surfaces carrying respectively, at least one substrate and at least two sources of different semiconductor substances forming the semiconductor periodic structure. A substrate heater and a source heater are placed near the first and second disks, respectively. First and second electric motors are arranged outside the reaction vessel in order to rotate, respectively, the first and second disks about the vessel vertical axis, as well as a drive to shift one of the disks along the axis.
Inventors
- 👤 Grigory Borisovich Goldin
- 👤 Valentin Petrovich Khlebnikov
- 👤 Jury Vasilievich Jushkov
- 👤 Vadim Nikolaevich Maslov
- 👤 Oleg Evgenievich Korobov
- 👤 Vladimir Petrovich Kuklev
- 👤 Vladimir Grigorievich Demyanets
- 👤 Ljudvig Alexandrovich Dolomanov
- 👤 Emilia Stanislavovna Kudeyarova
- 👤 Vladimir Viktorovich Nechaev
- 👤 Ellin Petrovich Bochkarev
- 👤 Nikolai Georgievich Voronin
- 👤 Jury Anatolievich Drozdov
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:19
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/22; C30B25/04
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
383 words
A device for epitaxial growing of semiconductor periodic structures from a gas phase, comprising: a vertical tubular reaction vessel filled with gas and having an inlet and an outlet for said gas containing an agent for carrying out the chemical reaction; a first disk located in said vessel and having an external surface and an operational surface, at least one substrate being placed near its periphery; a first electric motor for rotating said first disk about the vertical axis of said vessel, which is located outside vessel and mechanically connected to said first disk; at least two sources of substances forming the layers of said semiconductor periodic structure being grown; a second disk located in said vessel near said first disk and coaxial thereto, said second disk having a diameter equal to the diameter of said first disk, said second disk having an external surface and an operational surface parallel to said operational surface of said first disk and holding at least two said substance sources adjoining each other and alternating in the direction of rotation of said second disk about said vertical axis of said vessel; a second electric motor for rotating said second disk about said vertical axis of said vessel, which is located outside said vessel and mechanically connected to said second disk; a drive for shifting a disk along said vertical axis of said vessel and located outside the vessel and mechanically connected to one of said disks; a heater of a substrate located in said vessel near said external surface of said first disk; a heater of sources located in said vessel near said external surface of said second disk; both said heaters having a flat heating front and ensuring a temperature field with flat isothermal surfaces parallel to said operational surfaces of said disks; at least one of said sources being a first semiconductor material with composition corresponding to the composition of the first group of layers of said periodic semiconductor structure being grown; at least the second of said sources being made of a second semiconductor material with composition corresponding to the composition of the layers of said structure; said disks being located with a clearance between the surfaces of said substrate and a respective source, selected from an interval from 50 microns to 5 mm.
Claim 2
Independent Claim
383 words
A device for epitaxial growing of semiconductor periodic structures from a gas phase, comprising: a vertical tubular reaction vessel filled with gas and having an inlet and an outlet for said gas containing an agent for carrying out the chemical reaction; a first disk located in said vessel and having an external surface and an operational surface, at least one substrate being placed near its periphery; a first electric motor for rotating said first disk about the vertical axis of said vessel, which is located outside vessel and mechanically connected to said first disk; at least two sources of substances forming the layers of said semiconductor periodic structure being grown; a second disk located in said vessel near said first disk and coaxial thereto, said second disk having a diameter equal to the diameter of said first disk, said second disk having an external surface and an operational surface parallel to said operational surface of said first disk and holding at least two said substance sources adjoining each other and alternating in the direction of rotation of said second disk about said vertical axis of said vessel; a second electric motor for rotating said second disk about said vertical axis of said vessel, which is located outside said vessel and mechanically connected to said second disk; a drive for shifting a disk along said vertical axis of said vessel and located outside the vessel and mechanically connected to one of said disks; a heater of a substrate located in said vessel near said external surface of said first disk; a heater of sources located in said vessel near said external surface of said second disk; both said heaters having a flat heating front and ensuring a temperature field with flat isothermal surfaces parallel to said operational surfaces of said disks; at least one of said sources being a first semiconductor material with composition corresponding to the composition of the first group of layers of said periodic semiconductor structure being grown; at least the second of said sources being made of a second semiconductor material with composition corresponding to the composition of the layers of said structure; said disks being located with a clearance between the surfaces of said substrate and a respective source, selected from an interval from 50 microns to 5 mm.
Claim 3
Dependent Claim
36 words
A device as claimed in claim 1, wherein each said heater comprises a current conductive coil heated by electric current and protected by a sheath of a material inert to said gas medium inside said vessel.
Claim 4
Dependent Claim
181 words
A device as claimed in claim 1, comprising a first rod having a first end and a second end, said first end being rigidly secured in the center of said external surface of said first disk perpendicular to its said operational surface; first adjusting screws; said first rod extending out of said vessel and being tightened outside said vessel by said first adjusting screws; said second end of said first rod being kinematically connected to said electric motor for rotating said first disk; a second rod having a first end and a second end, said first end being rigidly secured in the center of said external surface of said second disk perpendicular to its said operational surface; second adjusting screws; said second rod extending out of said vessel and being tightened outside said vessel by said second adjusting screws; said second end of said second rod being kinematically connected to said electric motor for rotating said second disk; said drive for shifting a disk along the axis of said vessel being kinematically connected to said second end of said first rod.
Claim 5
Dependent Claim
32 words
A device as claimed in claim 3, comprising an additional drive for shifting a disk along the axis of said vessel and kinematically connected to said second end of said second rod.
Claim 6
Dependent Claim
181 words
A device as claimed in claim 1, comprising said first disk having a central opening; a hollow shaft having a first end and a second end, said first end being rigidly secured in said central opening of said first disk perpendicular to its said operational surface, said second end of said shift being kinematically connected outside said vessel to said electric motor for rotating said first disk; a stem with diameter less than the inner diameter of said hollow shaft and having a first end and a second end; said first end of said stem being connected to the center of said operational surface of said second disk; said stem being located inside said hollow shaft and centered therein so that said shaft and said stem are able to rotate with respect to each other, said stem extending out of said second end of said hollow shaft; said second end of said stem being kinematically connected to said electric motor for rotating said second disk and being connected to said drive for shifting the disk along the axis of said vessel.
Claim 7
Dependent Claim
28 words
A device as claimed in claim 5, wherein said first end of said stem is rigidly secured in said center of said operational surface of said second disk.
Claim 8
Dependent Claim
58 words
A device as claimed in claim 3, wherein said first and second disks have in the central zone near the location where said rods are fastened, openings with axes parallel to said vertical axis of said vessel, said openings letting the flow of said gas into the central zone in the clearance between said disks during their rotation.
Claim 9
Dependent Claim
63 words
A device as claimed in claim 5, wherein said first and second disks have in the central zone near the location where said hollow shaft and said stem are secured with respective openings having axes parallel to said axis of said vessel, said openings letting the flow of said gas into the central zone in the clearance between said disks during their rotation.
Claim 10
Dependent Claim
63 words
A device as claimed in claim 1, wherein said second disk has on said operational surface depressions along the periphery of said second disk, said depressions adjoining one another for holding said surfaces; the surface of each said source located in the respective depression being lower than said operational surface of said second disk by a distance from 50 microns to 5 mm.
Claim 11
Dependent Claim
62 words
A device as claimed in claim 1, wherein said first disk has on said operational surface depressions along the periphery of said first disk, said depressions adjoining one another for holding said substrates; the surface of each said substrate located in a respective depression being lower than said operational surface of said first disk by a distance from 50 to 500 microns.
Claim 12
Dependent Claim
88 words
A device as claimed in claim 9 wherein said first disk has on its operational surface depressions along the periphery of said first disk, said depressions adjoining one another for holding said substrates; the surface of each said substrate located in a respective said depression being lower than said operational surface of said first disk by a distance from 50 to 500 microns, the projection of said depressions of said first disk onto the surface of said second disk being less than said depressions of said second disk.
Claim 13
Dependent Claim
172 words
A device as claimed in claim 5, wherein said first disk has on said operational surface depressions along the periphery of said first disk, said depressions adjoining one another for holding said substrates; the surface of each said substrate located in a said respective depressions being lower than said operational surface of said first disk by a distance from 50 to 500 microns, said second disk being provided on said operational surface with depressions along the periphery of said second disk and adjoining one another for holding said sources; the surface of each said source located in the respective depression being lower than said operational surface of said second disk by a distance from 50 microns to 5 mm., the projection of said depressions of said first disk onto the surface of said second disk being less than said depressions of said second disk; said operational surfaces of said first and second disks being brought into contact, said stem being hinged to said center of said operational surface of said second disk.
Claim 14
Dependent Claim
47 words
A device as claimed in claim 1, wherein the location of each said source of substances on said operational surface of the second disk is bounded by a rim whose height over the surface of said source is selected from an interval from 0.5 to 5 mm.
Claim 15
Dependent Claim
34 words
A device as claimed in claim 1 wherein the surface plane of each said substance source is inclined with respect to the surface plane of a respective substrate at an angle less than 10°.
Claim 16
Dependent Claim
48 words
A device as claimed in claim 1, wherein at least one said substance source has on its surface a mask featuring windows with number, dimensions and arrangements selected so as to ensure the required velocity of the substance transfer from different parts of said source to said substrate.
Claim 17
Dependent Claim
28 words
A device as claimed in claim 1, wherein at least one said source of substances has a composition gradient directed perpendicular to the surface of said substance source.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-07-17 | 1982-01-16 | 1982-07-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-07-17 | 1986-01-16 | 1986-07-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-07-17 | 1990-01-16 | 1990-07-18 | $7700.00 | Window Closed / Lapsed |