Process for III-V compound epitaxial crystals utilizing inert carrier gas

Claim 1

A process for the production and deposition of epitaxial layers comprised of compounds selected from the group consisting of the nitrides, phosphides, arsenides and antimonides of aluminum, gallium, indium and mixtures thereof, onto a substrate material the crystal lattice spacing of which is within about 40% of that of said compounds and being selected from the class consisting of I-VII, II-VI and III-V compounds, germanium and silicon, which comprises A. combining in the vapor phase, while excluding oxidizing gases, first and second separate gas streams, said first gas stream comprising an inert carrier gas selected from the class consisting of nitrogen, helium and argon, and a gaseous mixture formed by the reaction of hydrogen halide and a Group III element; and said second gas stream comprising an inert carrier gas selected from the class consisting of nitrogen, helium and argon, and a gaseous substance selected from the group consisting of a Group V element and a volatile Group V compound, said second gas stream being maintained at a temperature insufficient to cause reaction between said carrier gas and said Group V element or compound; and (B) contacting the resulting reaction mixture with said substrate at a temperature within the range of from 135° C. to 1500° C. to deposit a single crystal form of at least one III-V compound as an epitaxial layer on said substrate.