Patent US4062034A successfully refreshed from Google Patents.
US4062034A
Expired / Lapsed
US
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Semiconductor device having a hetero junction
Assignee: Sony Corp
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Filing: 1976-04-23
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Granted: 1977-12-06
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Expires: 1996-04-23
Abstract
Abstract A semiconductor device comprising a silicon substrate with an oxygen doped polycrystalline or amorphous silicon layer formed on the substrate so as to form a hetero junction therewith. A transistor formed according to the invention has an emitter-base hetero junction and has a high current gain.
Inventors
- 👤 Takeshi Matsushita
- 👤 Hisao Hayashi
- 👤 Mitsuru Shibasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 09:51
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/80; H10D30/801; H10D10/00; H10D10/80; H10D10/821; H10D10/861; H10D62/00; H10D62/10; H10D62/17; H10D62/177; H10D62/40; H10D62/80; H10D62/82; H10D62/822; H10D62/83; H10D64/00; H10D64/60; H10D64/602; H10D64/62; H10D84/00; H10D84/40; H10D84/401; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P95/00; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10W74/147; H10W74/40; H10W74/481; Y; Y10; Y10S; Y10S148/00; Y10S148/113; Y10S148/118; Y10S148/122; Y10S438/00; Y10S438/914; Y10S438/918
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
45 words
A semiconductor device comprising a semiconductor region of a predetermined conductivity type, a polycrystalline or amorphous silicon layer containing oxygen and of a predetermined conductivity type on said region and forming a hetero junction therewith, and means for supplying an electrical current through said junction.
Claim 2
Dependent Claim
45 words
A semiconductor device comprising a semiconductor region of a predetermined conductivity type, a polycrystalline or amorphous silicon layer containing oxygen and of a predetermined conductivity type on said region and forming a hetero junction therewith, and means for supplying an electrical current through said junction.
Claim 3
Dependent Claim
18 words
A semiconductor device according to claim 1, in which the oxygen concentration in said layer is substantially uniform.
Claim 4
Dependent Claim
23 words
A semiconductor device according to claim 1, in which the oxygen concentration in said layer is gradually varied as a function of thickness.
Claim 5
Dependent Claim
61 words
A semiconductor device comprising: a substrate of a first conductivity type; a first region of a second conductivity type formed in said substrate on a major surface thereof; a first polycrystalline or amorphous silicon layer containing oxygen and of said first conductivity type formed on selected regions of said first region; and electrodes formed on said substrate, said region and layer.
Claim 6
Dependent Claim
61 words
A semiconductor device comprising: a substrate of a first conductivity type; a first region of a second conductivity type formed in said substrate on a major surface thereof; a first polycrystalline or amorphous silicon layer containing oxygen and of said first conductivity type formed on selected regions of said first region; and electrodes formed on said substrate, said region and layer.
Claim 7
Dependent Claim
36 words
A semiconductor device according to claim 4, including a second polycrystalline or amorphous silicon layer without oxygen and of said first conductivity type formed on said first layer and said electrode is on said second layer.
Claim 8
Dependent Claim
20 words
A semiconductor device according to claim 1 including a layer of silicon dioxide formed on said region and said layer.
Claim 9
Dependent Claim
30 words
A semiconductor device according to claim 1, wherein the oxygen doping in said layer is such that the band gap is greater than said region by more than 0.2 eV.
Claim 10
Dependent Claim
24 words
A semiconductor device according to claim 1, wherein the oxygen concentration in said layer is in the range of 15 to 50 atomic percent.
Claim 11
Dependent Claim
61 words
A semiconductor device comprising a substrate of a first conductivity type, a first polycrystalline or amorphous silicon layer containing oxygen and of a second conductivity type formed on said substrate, a second polycrystalline or amorphous silicon layer containing oxygen and of the first conductivity type formed on said first layer, and electrodes formed on said substrate, said first and second layers.
Claim 12
Dependent Claim
61 words
A semiconductor device comprising a substrate of a first conductivity type, a first polycrystalline or amorphous silicon layer containing oxygen and of a second conductivity type formed on said substrate, a second polycrystalline or amorphous silicon layer containing oxygen and of the first conductivity type formed on said first layer, and electrodes formed on said substrate, said first and second layers.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-12-05 | 1981-06-06 | 1981-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-12-05 | 1985-06-06 | 1985-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-12-05 | 1989-06-06 | 1989-12-06 | $7700.00 | Window Closed / Lapsed |