Patent US4053919A successfully refreshed from Google Patents.
US4053919A
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High speed infrared detector
Assignee: United States Department of the Air Force
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Filing: 1976-08-18
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Granted: 1977-10-11
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Expires: 1996-08-18
Abstract
Abstract A high speed infrared detector for use as a receiver in a 10.6μm communication system and being composed of a Pb 0 .8 Sn 0 .2 Te crystalline substrate, a 10.6μm absorbing layer on said substrate composed of a p-type Pb 0 .8 Sn 0 .2 Te material and a 10.6μm transparent layer disposed on said first layer and composed of a Pb 0 .9 Sn 0 .1 Te n-type material.
Inventors
- 👤 II Austin M. Andrews
- 👤 John E. Clarke
- 👤 Joseph T. Longo
- 👤 Edward R. Gertner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 18:03
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F30/2218; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H10F39/184; H10F77/00; H10F77/10; H10F77/12; H10F77/127; H10W; H10W72/00; H10W72/851; H10W72/874; H10W72/884; Y; Y10; Y10S; Y10S148/00; Y10S148/064; Y10S148/067; Y10S148/072; Y10S148/08; Y10S148/107
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
101 words
A high speed photodiode device particularly adapted to operate as a detector in the 10.6 μ portion of the infrared spectrum comprising (A) a substrate composed of a vapor transport grown Pb 0 .8 Sn 0 .2 Te p-type material; (B) a first layer epitaxially grown on said substrate for absorbing 10.6 μm radiation and being composed of a Pb 0 .8 Sn 0 .2 Te p-type material; and (C) a second layer epitaxially grown on said first layer to provide a region transparent to 10.6μm radiation and being composed of a Pb 0 .9 Sn 0 .1 Te n-type material.
Claim 2
Dependent Claim
101 words
A high speed photodiode device particularly adapted to operate as a detector in the 10.6 μ portion of the infrared spectrum comprising (A) a substrate composed of a vapor transport grown Pb 0 .8 Sn 0 .2 Te p-type material; (B) a first layer epitaxially grown on said substrate for absorbing 10.6 μm radiation and being composed of a Pb 0 .8 Sn 0 .2 Te p-type material; and (C) a second layer epitaxially grown on said first layer to provide a region transparent to 10.6μm radiation and being composed of a Pb 0 .9 Sn 0 .1 Te n-type material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-10-10 | 1981-04-11 | 1981-10-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-10-10 | 1985-04-11 | 1985-10-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-10-10 | 1989-04-11 | 1989-10-11 | $7700.00 | Window Closed / Lapsed |