US3961998A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Vacuum deposition method for fabricating an epitaxial pbsnte rectifying metal semiconductor contact photodetector
Assignee: United States Department of the Navy
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Filing: 1975-04-09
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Granted: 1976-06-08
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Expires: 1995-04-09
Abstract
Abstract A junction photodetector employing Pb 1-x Sn x Te in narrow film strips grown epitaxially on an appropriate substrate. An appropriate metal overlaps the film to form a metal-semiconductor contact.
Inventors
- 👤 Kurt Peter Scharnhorst
- 👤 Richard F. Bis
- 👤 Jack R. Dixon
- 👤 Bland B. Houston, Jr.
- 👤 Richard W. Brown
- 👤 Harold R. Riedl
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 15:43
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/227; H10F77/00; H10F77/10; H10F77/12; H10F77/127; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/063; Y10S148/12; Y10S148/122; Y10S148/139; Y10S148/15; Y10S438/00; Y10S438/967
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
181 words
A method for forming a photovoltaic, epitaxial film, metal contact radiation detector for detecting radiation having wavelengths ranging from 8 to 14 microns comprising the steps of: depositing an epitaxial crystalline layer selected from the group consisting of: Pb 1 -x Sn x Te, Pb 1 -x Sn x Se, and mixtures thereof by the quasiequilibrium method on a thermally conducting, electrically insulating crystalline substrate of a material having a face-entered cubic lattice with spacing between atoms equal to that of said epitaxial crystalline layer and having a coefficient of thermal expansion approximately equal to that of said epitaxial crystalline layer wherein x is a quantity having an appropriate value for detecting electromagnetic radiation having wavelengths ranging from 8 to 14 microns; thermally evaporating a strip of metal over at least a portion of said epitaxial crystalline layer without exposing saie epitaxial crytalline layer to ambient gases so as to form a rectifying metal-semiconductor contact; thermally evaporating a protective electrically insulating layer over said metal-semiconductor contact without exposing said metal-semiconductor to ambient gases; bonding said crystalline subtrate to a heat sink.
Claim 2
Independent Claim
181 words
A method for forming a photovoltaic, epitaxial film, metal contact radiation detector for detecting radiation having wavelengths ranging from 8 to 14 microns comprising the steps of: depositing an epitaxial crystalline layer selected from the group consisting of: Pb 1 -x Sn x Te, Pb 1 -x Sn x Se, and mixtures thereof by the quasiequilibrium method on a thermally conducting, electrically insulating crystalline substrate of a material having a face-entered cubic lattice with spacing between atoms equal to that of said epitaxial crystalline layer and having a coefficient of thermal expansion approximately equal to that of said epitaxial crystalline layer wherein x is a quantity having an appropriate value for detecting electromagnetic radiation having wavelengths ranging from 8 to 14 microns; thermally evaporating a strip of metal over at least a portion of said epitaxial crystalline layer without exposing saie epitaxial crytalline layer to ambient gases so as to form a rectifying metal-semiconductor contact; thermally evaporating a protective electrically insulating layer over said metal-semiconductor contact without exposing said metal-semiconductor to ambient gases; bonding said crystalline subtrate to a heat sink.
Claim 3
Dependent Claim
33 words
The method of claim 1 wherein said step of bonding comprises bonding to said heat sink in such a manner as to form a reflective surface between said substrate and said heat sink.
Claim 4
Dependent Claim
21 words
The method of claim 1 wherein said step of thermally evaporating a strip of metal comprises thermally evaporating indium (In) metal.
Claim 5
Dependent Claim
21 words
The method of claim 1 wherein said step of thermally evaporating a strip of metal comprises thermally evaporating lead (Pb) metal.
Claim 6
Dependent Claim
30 words
The method of claim 1 wherein said step of depositing an epitaxial crystalline layer on a crystalline substrate comprises depositing said layer on a crystalline substrate of BaF 2 .
Claim 7
Dependent Claim
29 words
The method of claim 1 wherein said step of depositing an epitaxial crystalline layer on a crystalline substrate comprises depositing said layer on a crystalline substrate of sodium chloride(NaCl).
Claim 8
Dependent Claim
29 words
The method of claim 1 wherein said step of depositing an epitaxial crystalline layer on a crystalline substrate comprises depositing said layer on a crystalline substrate of cesium bromide(CsBr).
Claim 9
Dependent Claim
31 words
The method of claim 1 wherein said step of depositing an epitaxial crystalline layer on a crystalline substrate comprises depositing said layer on a crystalline substrate of calcium fluoride(CaF 2 ).
Claim 10
Dependent Claim
28 words
The method of claim 1 wherein said step of thermally evaporating a protective, electrically insulating layer comprises evaporating a protective, electrically insulating layer of silicon dioxide(SiO 2 ).
Claim 11
Dependent Claim
28 words
The method of claim 1 wherein said step of thermally evaporating a protective, electrically insulating layer comprises evaporating a protective, electrically insulating layer of magnesium fluoride(MgF 2 ).
Claim 12
Dependent Claim
28 words
The method of claim 1 wherein said step of thermally evaporating a protective, electrically insulating layer comprises evaporating a protective, electrically insulating layer of calcium fluoride(CaF 2 ).
Claim 13
Dependent Claim
30 words
The method of claim 1 wherein said step of thermally evaporating a protective, electrically insulating layer comprises evaporating a protective, electrically insulating layer of aluminum oxide(Al 2 O 3 ).
Claim 14
Dependent Claim
27 words
The method of claim 1 wherein said step of depositing an epitaxial layer comprises depositing an epitaxial layer of lead tin telluride(Pb 1 -x Sn x Te).
Claim 15
Dependent Claim
27 words
The method of claim 1 wherein said step of depositing an epitaxial layer comprises depositing an epitaxial layer of lead tin selenide(Pb 1 -x Sn x Se).
Claim 16
Independent Claim
180 words
A method for forming a photovoltiac, epitaxial film, metal contact radiation detector for detecting radiation having wavelengths ranging from 8 to 14 microns comprising the steps of: depositing an epitaxial crystalline layer selected from the group consisting of: Pb 1-x Sn x Te, Pb 1-x Sn x Se, and mixtures thereof by the quasiequilibrium method on a crystalline substrate selected from the group consisting of: lithium fluoride (LiF), sodium chloride (NaCl), potassium chloride (KCl), cesium fluoride (CsF), cesium chloride (CsCl), cesium bromide (CsBr), calcium fluoride (CaF 2 ), strontium fluoride (SrF 2 ), and barium fluoride (BaF 2 ), wherein x is a quantity having an appropriate value for detecting electromagnetic radiation having wavelengths ranging from 8 to 14 microns; thermally evaporating a strip of metal over at least a portion of said epitaxial crystalline layer without exposing said epitaxial crystalline layer to ambient gases so as to form a rectifying metal-semiconductor contact; thermally evaporating a protective electrically insulating layer over said metal semiconductor contact without exposing said metal-semiconductor to ambient gases; bonding said crystalline substrate to a heat sink.
Claim 17
Independent Claim
180 words
A method for forming a photovoltiac, epitaxial film, metal contact radiation detector for detecting radiation having wavelengths ranging from 8 to 14 microns comprising the steps of: depositing an epitaxial crystalline layer selected from the group consisting of: Pb 1-x Sn x Te, Pb 1-x Sn x Se, and mixtures thereof by the quasiequilibrium method on a crystalline substrate selected from the group consisting of: lithium fluoride (LiF), sodium chloride (NaCl), potassium chloride (KCl), cesium fluoride (CsF), cesium chloride (CsCl), cesium bromide (CsBr), calcium fluoride (CaF 2 ), strontium fluoride (SrF 2 ), and barium fluoride (BaF 2 ), wherein x is a quantity having an appropriate value for detecting electromagnetic radiation having wavelengths ranging from 8 to 14 microns; thermally evaporating a strip of metal over at least a portion of said epitaxial crystalline layer without exposing said epitaxial crystalline layer to ambient gases so as to form a rectifying metal-semiconductor contact; thermally evaporating a protective electrically insulating layer over said metal semiconductor contact without exposing said metal-semiconductor to ambient gases; bonding said crystalline substrate to a heat sink.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-06-08 | 1979-12-08 | 1980-06-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-06-08 | 1983-12-08 | 1984-06-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-06-08 | 1987-12-08 | 1988-06-08 | $7700.00 | Window Closed / Lapsed |