US3980915A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metal-semiconductor diode infrared detector having semi-transparent electrode
Assignee: Texas Instruments Inc
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Filing: 1974-02-27
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Granted: 1976-09-14
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Expires: 1994-02-27
Abstract
Abstract This disclosure is directed to a photovoltaic detector having specific response to the infrared range, wherein the detector comprises a metal-semiconductor diode having a semi-transparent electrode and disposed on a specially prepared substrate of a narrow band gap semiconductor material or on an epitaxial layer or evaporated film of such material provided on a substrate. In a specific example, the narrow band gap semiconductor material of the substrate is specially prepared (Pb,Sn)Te or an epitaxial layer or evaporated film of (Pb,Sn)Te on a (Pb,Sn)Te substrate. The detected radiation is transmitted through the semi-transparent electrode on top of the photovoltaic detector.
Inventors
- 👤 Richard A. Chapman
- 👤 Milo R. Johnson
- 👤 Henry B. Morris
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 07:51
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H10F39/184; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/227; H10F77/00; H10F77/10; H10F77/12; H10F77/127; H10W; H10W72/00; H10W72/50; H10W72/531; H10W72/536
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
93 words
A metal-semiconductor diode infrared detector comprising: a body of narrow band gap semiconductor material, insulating layer means disposed on said body, said insulating layer means being provided with at least one opening therethrough exposing a selected portion of said body, a relatively thin metal layer disposed in said opening in contact with and covering the selected portion of said body to form a metal-semiconductor diode therewith, said relatively thin metal layer being at least partially transparent to infrared radiation and comprising a semi-transparent electrode, and electrical conductor means connected to said semi-transparent electrode.
Claim 2
Dependent Claim
93 words
A metal-semiconductor diode infrared detector comprising: a body of narrow band gap semiconductor material, insulating layer means disposed on said body, said insulating layer means being provided with at least one opening therethrough exposing a selected portion of said body, a relatively thin metal layer disposed in said opening in contact with and covering the selected portion of said body to form a metal-semiconductor diode therewith, said relatively thin metal layer being at least partially transparent to infrared radiation and comprising a semi-transparent electrode, and electrical conductor means connected to said semi-transparent electrode.
Claim 3
Dependent Claim
19 words
An infrared detector as set forth in claim 1, wherein said body comprises a substrate of homogeneous semiconductor material.
Claim 4
Dependent Claim
25 words
An infrared detector as set forth in claim 1, further including a substrate, and said body comprising an upper surface region provided on said substrate.
Claim 5
Dependent Claim
22 words
An infrared detector as set forth in claim 3, wherein said substrate and said body are made of the same semiconductor material.
Claim 6
Dependent Claim
20 words
An infrared detector as set forth in claim 3, wherein said substrate and said body are made of different materials.
Claim 7
Dependent Claim
131 words
A metal-semiconductor diode infrared detector comprising: a substrate of narrow band gap semiconductor material, said substrate being provided with an upper surface region having a relatively low carrier concentration as compared to the remainder of said substrate, insulating layer means disposed on said upper surface region of said substrate, said insulating layer means being provided with at least one opening therethrough exposing a selected portion of said upper surface region of said substrate, a relatively thin metal layer disposed in said opening in contact with and covering the selected portion of said upper surface region of said substrate to form a metal-semiconductor diode therewith, said relatively thin metal layer being at least partially transparent to infrared radiation and comprising a semi-transparent electrode, and electrical conductor means connected to said semi-transparent electrode.
Claim 8
Dependent Claim
131 words
A metal-semiconductor diode infrared detector comprising: a substrate of narrow band gap semiconductor material, said substrate being provided with an upper surface region having a relatively low carrier concentration as compared to the remainder of said substrate, insulating layer means disposed on said upper surface region of said substrate, said insulating layer means being provided with at least one opening therethrough exposing a selected portion of said upper surface region of said substrate, a relatively thin metal layer disposed in said opening in contact with and covering the selected portion of said upper surface region of said substrate to form a metal-semiconductor diode therewith, said relatively thin metal layer being at least partially transparent to infrared radiation and comprising a semi-transparent electrode, and electrical conductor means connected to said semi-transparent electrode.
Claim 9
Dependent Claim
35 words
An infrared detector as set forth in claim 6, wherein said substrate includes as the upper surface region thereof an annealed layer having a lower carrier concentration as compared to the remainder of said substrate.
Claim 10
Dependent Claim
37 words
An infrared detector as set forth in claim 6, wherein said upper surface region of said substrate is an epitaxial layer of the same material as said substrate and having a lower carrier concentration as compared thereto.
Claim 11
Dependent Claim
32 words
An infrared detector as set forth in claim 6, further including an anti-reflection coating disposed atop the portion of said semi-transparent electrode located in the opening formed in said insulating layer means.
Claim 12
Dependent Claim
77 words
An infrared detector as set forth in claim 6, wherein said insulating layer means comprises a first layer of surface passivating insulating material disposed in contacting engagement with said upper surface region of said substrate and a second upper insulating layer disposed above said first insulating layer, said upper insulating layer supporting portions of said semi-transparent electrode bounding said opening in said insulating layer means and said electrical conductor means to serve as a shock absorbing cushion.
Claim 13
Dependent Claim
49 words
An infrared detector as set forth in claim 6, wherein said substrate and said upper surface region thereof are made of a semiconductor material taken from the group consisting of Pb 1 -x Sn x Te, Hg 1 -x Cd x Te, and InAs 1 -x Sb x .
Claim 14
Dependent Claim
25 words
An infrared detector as set forth in claim 11, wherein said substrate and said upper surface region thereof are Pb 1 -x Sn x Te.
Claim 15
Dependent Claim
38 words
An infrared detector as set forth in claim 12, wherein said Pb 1 -x Sn x Te material of said substrate and said upper surface region are of p-type conductivity, and said semi-transparent electrode is made of indium.
Claim 16
Dependent Claim
22 words
An infrared detector as set forth in claim 13, wherein said semi-transparent indium electrode has a thickness in the range of 100-500A.
Claim 17
Dependent Claim
39 words
An infrared detector as set forth in claim 12, wherein said Pb 1 -x Sn x Te material of said substrate and said upper surface region thereof are of n-type conductivity, and said semi-transparent electrode is made of platinum.
Claim 18
Dependent Claim
22 words
An infrared detector as set forth in claim 15, wherein said semi-transparent platinum electrode has a thickness in the range of 100-500A.
Claim 19
Dependent Claim
24 words
An infrared detector as set forth in claim 6, wherein said metal-semiconductor diode is a photovoltaic detector operable at substantially zero external voltage bias.
Claim 20
Dependent Claim
42 words
An infrared detector as set forth in claim 2, wherein said substrate of homogeneous semiconductor material is made of a semiconductor material taken from the group consisting of Pb 1 -x Sn x Te, Hg 1 -x Cd x Te, and InSb.
Claim 21
Dependent Claim
29 words
An infrared detector as set forth in claim 6, wherein said substrate and said upper surface region are of p-type conductivity, and said semi-transparent electrode is made of lead.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-09-14 | 1980-03-15 | 1980-09-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-09-14 | 1984-03-15 | 1984-09-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-09-14 | 1988-03-15 | 1988-09-14 | $7700.00 | Window Closed / Lapsed |