US3783324A
Expired / Lapsed
US
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Photosensitive charge storage electrode having a selectively conducting protective layer of matching valence band on its surface
Assignee: RCA Corp
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Filing: 1972-09-11
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Granted: 1974-01-01
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Expires: 1992-09-11
Abstract
Abstract A photosensitive charge storage electrode comprises a photoconductive substrate having a bulk region with a surface region of reduced conductivity. On the surface region is a selectively insulating layer of a composition such that the top of the valence band of the layer is essentially at the same energy level as the top of the valence band in the bulk region of the photoconductive substrate.
Inventors
- 👤 C Wronski
- 👤 W Yim
- 👤 J Dresner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 23:01
CPC Classifications
H; H01; H01J; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H01J29/45; H01J9/00; H01J9/20; H01J9/233
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
123 words
A photosensitive charge storage electrode comprising: a. a photoconductive substrate having a bulk region with a surface region of reduced electrical conductivity; and b. a layer of selectively insulating selenium glass on the surface of said surface region, said layer being more conductive to holes than to electrons across its thickness, said selenium glass having a bandgap such that the top of the valence band in said glass is essentially at the same energy level as the top of the valence band in said bulk region of said photoconductive substrate, said glass consisting essentially of from about 7 to about 12 atomic percent arsenic, from about 14 to about 39 atomic percent tellurium, and from about 49 to about 69 atomic percent selenium.
Claim 2
Dependent Claim
123 words
A photosensitive charge storage electrode comprising: a. a photoconductive substrate having a bulk region with a surface region of reduced electrical conductivity; and b. a layer of selectively insulating selenium glass on the surface of said surface region, said layer being more conductive to holes than to electrons across its thickness, said selenium glass having a bandgap such that the top of the valence band in said glass is essentially at the same energy level as the top of the valence band in said bulk region of said photoconductive substrate, said glass consisting essentially of from about 7 to about 12 atomic percent arsenic, from about 14 to about 39 atomic percent tellurium, and from about 49 to about 69 atomic percent selenium.
Claim 3
Dependent Claim
19 words
The electrode defined in claim 1 wherein said layer is from about 50 nanometers to about 1,000 nanometers thick.
Claim 4
Dependent Claim
124 words
A photosensitive charge storage electrode comprising: a. a photoconductive substrate having a bulk region with a surface region of reduced electrical conductivity and consisting essentially of cadmium selenide having a surface region containing a conductivity reducing modifier; and b. a layer of selectively insulating glass on the surface region, said layer being more conductive to holes than to electrons across its thickness, said layer consisting essentially of an alloy of arsenic, tellurium, and selenium and having: i. a thickness of from about 50 to about 1,000 nanometers, and ii. a bandgap such that the top of the valence band in said material is essentially at the same energy level as the top of the valence band in said bulk region of said photoconductive substrate.
Claim 5
Dependent Claim
124 words
A photosensitive charge storage electrode comprising: a. a photoconductive substrate having a bulk region with a surface region of reduced electrical conductivity and consisting essentially of cadmium selenide having a surface region containing a conductivity reducing modifier; and b. a layer of selectively insulating glass on the surface region, said layer being more conductive to holes than to electrons across its thickness, said layer consisting essentially of an alloy of arsenic, tellurium, and selenium and having: i. a thickness of from about 50 to about 1,000 nanometers, and ii. a bandgap such that the top of the valence band in said material is essentially at the same energy level as the top of the valence band in said bulk region of said photoconductive substrate.
Claim 6
Dependent Claim
54 words
The electrode defined in claim 3 wherein said surface region is less than 5 nanometers thick, said conductivity reducing modifier is oxygen, said insulating layer glass is an alloy of about 12 atomic percent arsenic, about 29 atomic percent tellurium, and about 59 atomic percent selenium, said insulating layer being about 950 nanometers thick.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-12-31 | 1977-07-02 | 1978-01-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-12-31 | 1981-07-02 | 1982-01-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-12-31 | 1985-07-02 | 1986-01-01 | $7700.00 | Window Closed / Lapsed |