Field effect transistor structure and method of making same

Claim 1

In the method of fabricating a field effect transistor which includes the steps of: forming a composite silicon dioxide-silicon nitride insulating layer over the active regions of said field effect transistor, said active regions including a channel region disposed between source and drain regions; depositing a field shield electrode of polycrystalline silicon over a portion of said composite layer; forming a conductive silicon dioxide layer over the upper and sidewall surfaces of said polycrystalline silicon layer; and depositing a gate electrode over said composite layer; the improvement comprising: forming a layer of highly resistive material between said conductive silicon dioxide layer and said silicon nitride layer prior to the step of forming said field shield electrode; said material selected from the group consisting of silicon oxynitride and silicon dioxide.