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US4048502A
Expired / Lapsed
US
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Electro-optical transducer
Assignee: Siemens AG
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Filing: 1975-08-27
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Granted: 1977-09-13
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Expires: 1995-08-27
Abstract
Abstract An electro-optical transducer which encompasses, within a vacuum tube, a constructional element having an alkali metal and a constructional element having a semi-conductor. The semi-conductor constructional element is rendered insensitive with respect to alkali metals. This is achieved in that the surface of the semi-conductor is at least partly covered with a layer or coating of polyimide.
Inventors
- 👤 Friedrich Gudden
- 👤 Herbert Weiss
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 19:58
CPC Classifications
H; H01; H01J; H01J31/00; H01J31/08; H01J31/49; G; G01; G01T; G01T1/00; G01T1/16; G01T1/161; G01T1/164; G01T1/1641; G01T1/1645; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
115 words
In a gamma-image tube having a vacuum chamber, a photocathode means positioned within said chamber and having an alkali metal therein, a semiconductor means positioned within said chamber in spaced relation to said photocathode means and so as to have a major semiconductive surface thereof facing said cathode means, and a plurality of electrode strips positioned at least on said major semiconductive surface of the semiconductor means so as to define a pattern of electrode-free semiconductive areas; the improvement comprising: a layer composed of a polyimide positioned on at least said electrode-free semiconductive areas of the major surface of said semiconductor means facing said photocathode, said layer having a thickness of less than 5 μm.
Claim 2
Dependent Claim
115 words
In a gamma-image tube having a vacuum chamber, a photocathode means positioned within said chamber and having an alkali metal therein, a semiconductor means positioned within said chamber in spaced relation to said photocathode means and so as to have a major semiconductive surface thereof facing said cathode means, and a plurality of electrode strips positioned at least on said major semiconductive surface of the semiconductor means so as to define a pattern of electrode-free semiconductive areas; the improvement comprising: a layer composed of a polyimide positioned on at least said electrode-free semiconductive areas of the major surface of said semiconductor means facing said photocathode, said layer having a thickness of less than 5 μm.
Claim 3
Dependent Claim
54 words
In a gamma-image tube as defined in claim 1 wherein the electrode-free semiconductive areas of the major surface of the semiconductor means are provided with a layer of a silicon dioxide and the polyimide layer is positioned on the respective surfaces of the electrode strips and the dioxide layer which faces the photocathode means.
Claim 4
Dependent Claim
27 words
In a gamma-image tube as defined in claim 2 wherein said dioxide layer is of a thickness about equal to the thickness of an individual electrode strip.
Claim 5
Dependent Claim
24 words
A gamma image tube as claimed in claim 1, said polyimide covering layer having a thickness in the range of 0.1 to 1.0 μm.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-09-12 | 1981-03-14 | 1981-09-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-09-12 | 1985-03-14 | 1985-09-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-09-12 | 1989-03-14 | 1989-09-13 | $7700.00 | Window Closed / Lapsed |