Patent US4040083A successfully refreshed from Google Patents.
US4040083A
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Aluminum oxide layer bonding polymer resin layer to semiconductor device
Assignee: Hitachi Ltd
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Filing: 1974-11-22
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Granted: 1977-08-02
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Expires: 1994-11-22
Abstract
Abstract Disclosed is a semiconductor device including a Si body, and SiO 2 layer disposed on the surface of the body, an aluminum oxide layer having a thickness of about 50 A on the SiO 2 layer, which is formed by applying a solution including an aluminum chelate compound onto the SiO 2 layer and heating the solution at a temperature of 300° C. for 30 minutes, and a polymer resin layer of polyimide disposed on the aluminum oxide layer. In this device, the adhesive-strength between the SiO 2 layer and the polyimide layer is remarkably increased when compared with a semiconductor device wherein the polyimide layer is directly disposed on the SiO 2 layer.
Inventors
- 👤 Atsushi Saiki
- 👤 Seiki Harada
- 👤 Yoichi Oba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 06:37
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/47; H10W20/00; H10W20/40; H10W74/43
Claims Analysis
Total Claims: 48
Claim 1
Independent Claim
64 words
A semiconductor device comprising: a semiconductor body having at least one semiconductor element therein; an insulating layer disposed on the surface of said body; a first anhydrous aluminum oxide layer having a thickness of between about 10 and about 2000 A and disposed on the surface of said insulating layer; and a first polymer resin layer disposed on the surface of said oxide layer.
Claim 2
Dependent Claim
64 words
A semiconductor device comprising: a semiconductor body having at least one semiconductor element therein; an insulating layer disposed on the surface of said body; a first anhydrous aluminum oxide layer having a thickness of between about 10 and about 2000 A and disposed on the surface of said insulating layer; and a first polymer resin layer disposed on the surface of said oxide layer.
Claim 3
Dependent Claim
25 words
A semiconductor device according to claim 1, wherein the thickness of the first anhydrous aluminum oxide layer is between about 50 and about 2000 A.
Claim 4
Dependent Claim
25 words
A semiconductor device according to claim 2, wherein the thickness of the first anhydrous aluminum oxide layer is between about 50 and about 500 A.
Claim 5
Dependent Claim
24 words
A semiconductor device according to claim 3, wherein the thickness of the first anhydrous aluminum oxide layer is between about 50 and 200 A.
Claim 6
Dependent Claim
105 words
A semiconductor device according to claim 1, wherein the first polymer resin layer is selected from the group consisting of polyimide layer, polybenzimidazole layer and PIQ layer formed by reacting (a) a diaminoamide having the following general formula: ##STR11## wherein Ar represents a residual radical of an aromatic group, Y represents SO 2 or CO, and one of the amino groups and the Y-- NH 2 group are in an ortho position with respect to each other, (b) a diamine, and (c) a tetracarboxylic acid dianhydride to form a polyamide-type intermediate product and thereafter causing said intermediate product to dehydrate and to undergo ring closure.
Claim 7
Dependent Claim
104 words
A semiconductor device according to claim 2, wherein the first polymer resin layer is selected from the group consisting of polyimide layer, polybenzimidazole layer and PIQ layer formed by reacting (a) a diaminoamide having the following general formula: ##STR12## wherein Ar represents a residual radical of an aromatic group, Y represents SO 2 or CO, and one of the amino groups and the Y--NH 2 group are in an ortho position with respect to each other, (b) a diamine, and (c) a tetracarboxylic acid dianhydride to form a polyamide-type intermediate product and thereafter causing said intermediate product to dehydrate and to undergo ring closure.
Claim 8
Dependent Claim
103 words
A semiconductor device according to claim 5, wherein the first polymer resin layer is selected from the group consisting of polyimide layer and PIQ layer formed by reacting (a) a diaminoamide having the following general formula: ##STR13## wherein Ar represents a residual radical of an aromatic group, Y represents SO 2 or CO, and one of the amino groups and the Y-- NH 2 group are in an ortho position with respect to each other, (b) a diamine, and (c) a tetracarboxylic acid dianhydride to form a polyamide-type intermediate product and thereafter causing said intermediate product to dehydrate and to undergo ring closure.
Claim 9
Dependent Claim
103 words
A semiconductor device according to claim 6, wherein the first polymer resin layer is selected from the group consisting of polyimide layer and PIQ layer formed by reacting (a) a diaminoamide having the following general formula: ##STR14## wherein Ar represents a residual radical of an aromatic group, Y represents SO 2 or CO, and one of the amino groups and the Y-- NH 2 group are in an ortho position with respect to each other, (b) a diamine, and (c) a tetracarboxylic acid dianhydride to form a polyamide-type intermediate product and thereafter causing said intermediate product to dehydrate and to undergo ring closure.
Claim 10
Dependent Claim
94 words
A semiconductor device according to claim 7, wherein the first polymer resin layer is PIQ layer formed by reacting (a) a diaminoamide having the following general formula: ##STR15## wherein Ar represents a residual radical of an aromatic group, Y represents SO 2 and CO, and one of the amino groups and the Y-- NH 2 group are in an ortho position with respect to each other, (b) a diamine, and (c) a tetracarboxylic acid dianhydride to form a polyamide-type intermediate product and thereafter causing said intermediate product to dehydrate and to undergo ring closure.
Claim 11
Dependent Claim
94 words
A semiconductor device according to claim 8, wherein the first polymer resin layer is PIQ layer formed by reacting (a) a diaminoamide having the following general formula: ##STR16## wherein Ar represents a residual radical of an aromatic group, Y represents SO 2 or CO, and one of the amino groups and the Y-- NH 2 group are in an ortho position with respect to each other, (b) a diamine, and (c) a tetracarboxylic acid dianhydride to form a polyamide-type intermediate product and thereafter causing said intermediate product to dehydrate and to undergo ring closure.
Claim 12
Dependent Claim
47 words
A semiconductor device according to claim 1, which further comprises a second anhydrous aluminum oxide layer having a thickness of about 10 A and about 2000 A disposed on the first polymer resin layer, and a second polymer resin layer, disposed on the second metal oxide layer.
Claim 13
Dependent Claim
102 words
A semiconductor device according to claim 11, wherein the first polymer resin layer is selected from the group consisting of polyimide layer and PIQ layer formed by reacting (a) a diaminoamide having the following general formula: ##STR17## wherein Ar represents a residual radical of an aromatic group, Y represents SO 2 or CO, and one of the amino groups and the Y--NH 2 group are in an ortho position with respect to each other, (b) a diamine, and (c) a tetracarboxylic acid dianhydride to form a polyamide-type intermediate product and thereafter causing said intermediate product to dehydrate and to undergo ring closure.
Claim 14
Dependent Claim
30 words
A semiconductor device according to claim 12, wherein the thickness of each of the first and second anhydrous aluminum oxide layers is between about 50 A and about 2000 A.
Claim 15
Dependent Claim
30 words
A semiconductor device according to claim 13, wherein the thickness of each of the first and second anhydrous aluminum oxide layers is between about 50 A and about 500 A.
Claim 16
Dependent Claim
30 words
A semiconductor device according to claim 14, wherein the thickness of each of the first and second anhydrous aluminum oxide layers is between about 50 A and about 200 A.
Claim 17
Dependent Claim
41 words
A semiconductor device according to claim 1, which further comprises a first metal layer penetrating the first anhydrous aluminum oxide layer and the first polymer resin layer, and extending on a part of the surface of the first polymer resin layer.
Claim 18
Dependent Claim
76 words
A semiconductor device according to claim 16, which further comprises a second anhydrous aluminum oxide layer disposed on the surface of the first polymer resin layer and of the metal layer, a second polymer resin layer disposed on the second anhydrous aluminum oxide layer, and a second metal layer penetrating the second polymer resin layer and the second anhydrous aluminum oxide layer and extending on a part of the surface of the second polymer resin layer.
Claim 19
Dependent Claim
26 words
The semiconductor device of claim 1, wherein said first anhydrous aluminum oxide layer is a layer derived from the thermal decomposition of an aluminum chelate compound.
Claim 20
Dependent Claim
56 words
The semiconductor device of claim 18, wherein the aluminum chelate compound is selected from the group consisting of aluminum chelate compounds having general formulae of ##STR18## wherein X 1 through X 6 designate coordinate elements, each of which is ##STR19## R 1 through R 9 designate alkyl group having a carbon number of 1 to 4.
Claim 21
Dependent Claim
32 words
The semiconductor device of claim 19, wherein the aluminum chelate compound is selected from the group consisting of aluminum-mono-ethylacetoacetate-diisopropylate, aluminum tris (ethylacetoacetate), aluminum tris (acetylacetonate), aluminum tris (malonic acid ethylate), and aluminum-di-ethylacetoacetate-monoisopropylate.
Claim 22
Dependent Claim
26 words
The semiconductor device of claim 20, wherein the aluminum chelate compound is selected from the group consisting of aluminum-mono-ethylacetoacetate-diisopropylate, aluminum tris (ethylacetoacetate), and aluminum tris (acetylacetonate).
Claim 23
Dependent Claim
95 words
The semiconductor device of claim 19, wherein said first polymer resin layer is a PIQ layer formed by reacting (a) a diamonoamide having the following general formula: ##STR20## wherein Ar represents a residual radical of an aromatic group, Y represents SO 2 or CO, and one of the amino groups and the Y -- NH 2 group are in an ortho position with respect to each other, (b) a diamine, and (c) a tetracarboxylic acid dianhydride to form a polyamide-type intermediate product and thereafter causing said intermediate product to dehydrate and to undergo ring closure.
Claim 24
Dependent Claim
95 words
The semiconductor device of claim 18, wherein said first polymer resin layer is a PIQ layer formed by reacting (a) a diamonoamide having the following general formula: ##STR21## wherein Ar represents a residual radical of an aromatic group, Y represents SO 2 or CO, and one of the amino groups and the Y -- NH 2 group are in an ortho position with respect to each other, (b) a diamine, and (c) a tetracarboxylic acid dianhydride to form a polyamide-type intermediate product and thereafter causing said intermediate product to dehydrate and to undergo ring closure.
Claim 25
Dependent Claim
18 words
The semiconductor device of claim 23, wherein said insulating layer is formed from silicon dioxide or silicon nitride.
Claim 26
Dependent Claim
18 words
The semiconductor device of claim 1, wherein said insulating layer is formed from silicon dioxide or silicon nitride.
Claim 27
Dependent Claim
24 words
The semiconductor device of claim 25, wherein said first anhydrous aluminum oxide layer is derived from the thermal decomposition of an aluminum chelate compound.
Claim 28
Dependent Claim
56 words
The semiconductor device of claim 26, wherein the aluminum chelate compound is selected from the group consisting of aluminum chelate compounds having general formulae of ##STR22## wherein X 1 through X 6 designate coordinate elements, each of which is ##STR23## R 1 through R 9 designate alkyl group having a carbon number of 1 to 4.
Claim 29
Dependent Claim
56 words
The semiconductor device of claim 26, wherein said aluminum chelate compound is selected from the group consisting of Aluminum-mono-acetylacetonate-dialkylate, Aluminum-di-acetylacetonate-mono-alkylate, Aluminum-mono-methylacetoacetate-mono-alkylate, Aluminum-di-methylacetoacetate-mono-alkylate, Aluminum tris (methylacetoacetate), Aluminum-mono-propylacetoacetate-dialkylate, Aluminum-di-propylacetoacetate-mono-alkylate, Aluminum tris (propylacetoacetate), Aluminum-mono-butylacetoacetate-dialkylate, Aluminum-di-butylacetoacetate-mono-alkylate, and Aluminum tris (butylacetoacetate), wherein the alkylate moieties are independently selected from the group consisting of methylate, ethylate, n-propylate, isopropylate, n-butylate, sec-butylate and tert-butylate.
Claim 30
Dependent Claim
28 words
The semiconductor device of claim 26, wherein said first anhydrous aluminum oxide layer is derived from the reaction of AlCl 3 , CO 2 and H 2 .
Claim 31
Dependent Claim
24 words
The semiconductor device of claim 1, wherein said first anhydrous aluminum oxide layer is derived from the thermal decomposition of an aluminum chelate compound.
Claim 32
Dependent Claim
56 words
The semiconductor device of claim 30, wherein the aluminum chelate compound is selected from the group consisting of aluminum chelate compounds having general formulae of ##STR24## wherein X 1 through X 6 designate coordinate elements, each of which is ##STR25## R 1 through R 9 designate alkyl group having a carbon number of 1 to 4.
Claim 33
Dependent Claim
56 words
The semiconductor device of claim 30, wherein said aluminum chelate compound is selected from the group consisting of Aluminum-mono-acetylacetonate-dialkylate Aluminum-di-acetylacetonate-mono-alkylate Aluminum-mono-methylacetoacetate-mono-alkylate Aluminum-di-methylacetoacetate-mono-alkylate Aluminum tris (methylacetoacetate), Aluminum-mono-propylacetoacetate-dialkylate Aluminum-di-propylacetoacetate-mono-alkylate Aluminum tris (propylacetoacetate) Aluminum-mono-butylacetoacetate-dialkylate Aluminum-di-butylacetoacetate-mono-alkylate, and Aluminum tris (butylacetoacetate), wherein the alkylate moieties are independently selected from the group consisting of methylate, ethylate, n-propylate, isopropylate, n-butylate, sec-butylate and tert-butylate.
Claim 34
Dependent Claim
28 words
The semiconductor device of claim 30, wherein said first anhydrous aluminum oxide layer is derived from the reaction of AlCl 3 , CO 2 and H 2 .
Claim 35
Dependent Claim
53 words
A semiconductor device comprising: a semiconductor body having at least one semiconductor element therein; a anhydrous aluminum oxide layer having a thickness of between about 10 and about 200 A and disposed on the surface of said body; and a polymer resin layer disposed on the surface of said anhydrous aluminum oxide layer.
Claim 36
Dependent Claim
53 words
A semiconductor device comprising: a semiconductor body having at least one semiconductor element therein; a anhydrous aluminum oxide layer having a thickness of between about 10 and about 200 A and disposed on the surface of said body; and a polymer resin layer disposed on the surface of said anhydrous aluminum oxide layer.
Claim 37
Dependent Claim
24 words
A semiconductor device according to claim 34, wherein the thickness of the anhydrous aluminum oxide layer is between about 50 and about 2000 A.
Claim 38
Dependent Claim
23 words
A semiconductor device according to claim 35, wherein the thickness of the anhydrous oxide layer is between about 50 and about 500 A.
Claim 39
Dependent Claim
23 words
A semiconductor device according to claim 36, wherein the thickness of the anhydrous aluminum oxide layer is between about 50 and 200 A.
Claim 40
Dependent Claim
104 words
A semiconductor device according to claim 34, wherein the first polymer resin layer is selected from the group consisting of polyimide layer and PIQ layer formed by reacting (a) a diaminoamide having the following general formula: ##STR26## wherein Ar represents a residual radical of an aromatic group, Y represents SO 2 or CO, and one of the amino groups and the Y -- NH 2 group are in an ortho position with respect to each other, (b) a diamine, and (c) a tetracarboxylic acid dianhydride to form a polyamide-type intermediate product and thereafter causing said intermediate product to dehydrate and to undergo ring closure.
Claim 41
Dependent Claim
95 words
A semiconductor device according to claim 38, wherein the first polymer resin layer is PIQ layer formed by reacting (a) a diaminoamide having the following general formula: ##STR27## wherein Ar represents a residual radical of an aromatic group, Y represents SO 2 or CO, and one of the amino groups and the Y -- NH 2 group are in an ortho position with respect to each other, (b) a diamine, and (c) a tetracarboxylic acid dianhydride to form a polyamide-type intermediate product and thereafter causing said intermediate product to dehydrate and to undergo ring closure.
Claim 42
Dependent Claim
23 words
A semiconductor device according to claim 39, wherein the thickness of the anhydrous aluminum oxide layer is between about 50 and 500 A.
Claim 43
Dependent Claim
23 words
A semiconductor device according to claim 40, wherein the thickness of the anhydrous aluminum oxide layer is between about 50 and 200 A.
Claim 44
Dependent Claim
80 words
In a semiconductor device including a semiconductor body having at least one semiconductor element therein and an insulating layer disposed on the surface of the semiconductor body, said insulating layer formed from a first layer composed of silicon dioxide or silicon nitride and a second layer formed from a polymer resin, said first layer and said second layer being bonded together by means of an adhesion promoting agent, the improvement wherein said adhesion promoting agent is a anhydrous aluminum oxide.
Claim 45
Dependent Claim
80 words
In a semiconductor device including a semiconductor body having at least one semiconductor element therein and an insulating layer disposed on the surface of the semiconductor body, said insulating layer formed from a first layer composed of silicon dioxide or silicon nitride and a second layer formed from a polymer resin, said first layer and said second layer being bonded together by means of an adhesion promoting agent, the improvement wherein said adhesion promoting agent is a anhydrous aluminum oxide.
Claim 46
Dependent Claim
20 words
The semiconductor device of claim 42, wherein said anhydrous aluminum oxide is derived from the decomposition of an aluminum chelate.
Claim 47
Dependent Claim
51 words
In a semiconductor device including a semiconductor body having at least one semiconductor element therein and an insulating layer formed from a polymer resin layer and a layer of an adhesion promoting agent bonded to said polymer resin layer, the improvement wherein said adhesion promoting agent is an anhydrous aluminum oxide.
Claim 48
Dependent Claim
51 words
In a semiconductor device including a semiconductor body having at least one semiconductor element therein and an insulating layer formed from a polymer resin layer and a layer of an adhesion promoting agent bonded to said polymer resin layer, the improvement wherein said adhesion promoting agent is an anhydrous aluminum oxide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-08-01 | 1981-01-31 | 1981-08-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-08-01 | 1985-01-31 | 1985-08-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-08-01 | 1989-01-31 | 1989-08-02 | $7700.00 | Window Closed / Lapsed |