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US4030949A
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Method of effecting liquid phase epitaxial growth of group III-V semiconductors
Assignee: NTT Inc
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Filing: 1975-06-26
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Granted: 1977-06-21
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Expires: 1995-06-26
Abstract
Abstract Disclosed is a method of yielding a multilayer-liquid phase epitaxial growth of Al x Ga 1 -x As and GaAs for manufacturing a double heterostructure laser, light emitting diode, etc., which is characterized in that hydrogen gas or inert gas, containing GaCl gas, is used as an atmosphere for the epitaxial growth. This method permits the liquid phase epitaxial growth of a semiconductor layer even on an Al x Ga 1 -x As (x ≧ 0.3) which is once exposed to the air or subjected to an etching treatment. Accordingly, this method is suitable for the manufacture of a semiconductor element having a buried active layer. This method also permits the manufacture of an epitaxial wafer having a low dislocation density.
Inventors
- 👤 Yoshiji Horikoshi
- 👤 Yoshitaka Furukawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 21:13
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; C; C30; C30B; C30B19/00; C30B19/02; C30B19/04; C30B29/00; C30B29/10; C30B29/40; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; Y; Y10; Y10S; Y10S148/00; Y10S148/084
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
193 words
In a method for manufacturing a buried type semiconductor laser comprising: a. the step of preparing a GaAs single crystalline substrate; b. the step of effecting alternately the liquid phase epitaxial crystal growth of an Al 0 .3 GA 0 .7 As layer and an Al 0 .05 Ga 0 .95 As layer on said GaAs single crystalline substrate; c. the step of coating SiO 2 on the surface of said Al 0 .05 Ga 0 .95 As layer to form a stripe-shaped pattern and etching said Al 0 .05 Ga 0 .95 As layer by an etching solution to form a stripe-shaped Al 0 .05 Ga 0 .95 As layer on said Al 0 .3 Ga 0 .7 As layer; and d. the step of effecting the liquid phase epitaxial crystal growths of an Al 0 .3 Ga 0 .7 As layer and a GaAs layer on said Al 0 .3 Ga 0 .7 As layer and stripe-shaped Al 0 .05 Ga 0 .95 As layer; the improvement which is characterized in that said liquid phase epitaxial growths are carried out in a mixed gas atmosphere of GaCl and H 2 .
Claim 2
Dependent Claim
193 words
In a method for manufacturing a buried type semiconductor laser comprising: a. the step of preparing a GaAs single crystalline substrate; b. the step of effecting alternately the liquid phase epitaxial crystal growth of an Al 0 .3 GA 0 .7 As layer and an Al 0 .05 Ga 0 .95 As layer on said GaAs single crystalline substrate; c. the step of coating SiO 2 on the surface of said Al 0 .05 Ga 0 .95 As layer to form a stripe-shaped pattern and etching said Al 0 .05 Ga 0 .95 As layer by an etching solution to form a stripe-shaped Al 0 .05 Ga 0 .95 As layer on said Al 0 .3 Ga 0 .7 As layer; and d. the step of effecting the liquid phase epitaxial crystal growths of an Al 0 .3 Ga 0 .7 As layer and a GaAs layer on said Al 0 .3 Ga 0 .7 As layer and stripe-shaped Al 0 .05 Ga 0 .95 As layer; the improvement which is characterized in that said liquid phase epitaxial growths are carried out in a mixed gas atmosphere of GaCl and H 2 .
Claim 3
Dependent Claim
152 words
In a method of producing liquid phase epitaxial growths of GaAs and Al y Ga 1 -y As on an Al x Ga 1 -x As substrate, comprising allowing melts to contact the substrate using a slide boat, wherein a mixed gas containing a gas selected from the group consisting of hydrogen gas and an inert gas, and another gas selected from the group consisting of AsCl 3 and HCl is passed through a reaction tube, thereby to form epitaxial growth layers in turn, the improvement which comprises disposing a boat filled with metal gallium in the vicinity of the gas-introducing side of said slide boat, the amount of the metal gallium being sufficient for a reaction with the mixed gas to evolve GaCl gas, and maintaining over said substrate and melts an atmosphere of a mixed gas containing either one of hydrogen gas and an inert gas together with GaCl gas.
Claim 4
Dependent Claim
152 words
In a method of producing liquid phase epitaxial growths of GaAs and Al y Ga 1 -y As on an Al x Ga 1 -x As substrate, comprising allowing melts to contact the substrate using a slide boat, wherein a mixed gas containing a gas selected from the group consisting of hydrogen gas and an inert gas, and another gas selected from the group consisting of AsCl 3 and HCl is passed through a reaction tube, thereby to form epitaxial growth layers in turn, the improvement which comprises disposing a boat filled with metal gallium in the vicinity of the gas-introducing side of said slide boat, the amount of the metal gallium being sufficient for a reaction with the mixed gas to evolve GaCl gas, and maintaining over said substrate and melts an atmosphere of a mixed gas containing either one of hydrogen gas and an inert gas together with GaCl gas.
Claim 5
Dependent Claim
32 words
A liquid phase epitaxial growth method according to claim 2, wherein said substrate is preliminarily exposed to the air for a period long enough to form a stripe-shaped pattern on the substrate.
Claim 6
Dependent Claim
33 words
A liquid phase epitaxial growth method according to claim 2, wherein the epitaxial growths are carried out by gradually cooling the slide boat which is initially set at 870° down to 820° C.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-06-20 | 1980-12-20 | 1981-06-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-06-20 | 1984-12-20 | 1985-06-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-06-20 | 1988-12-20 | 1989-06-21 | $7700.00 | Window Closed / Lapsed |