US4023260A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor diodes for use in millimeter-wave circuits
Assignee: AT&T Inc
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Filing: 1976-03-05
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Granted: 1977-05-17
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Expires: 1996-03-05
Abstract
Abstract A new method of manufacturing semiconductor diodes is described in which the resulting diode chips have ohmic contacts on the four side surfaces of the diode chip. An insulating layer of a material such as silicon-dioxide is first formed on the epitaxial layer of a semiconductor wafer. Notches are then cut in a gridlike pattern into the semiconductor wafer on the side of the chip having the insulating layer. The notches extend approximately halfway into the semiconductor wafer and form a plurality of areas, each one of which has the dimensions of a desired diode chip. An ohmic contact is then established on the walls and bottoms of the notches by depositing a metallic layer and alloying this layer to the semiconductor material. A plurality of diodes are formed in holes in the insulating layer on each one of the areas representing an individual chip. The semiconductor wafer is then backlapped to remove the remaining material connecting the individual chips together thereby forming a plurality of individual diode chips.
Inventors
- 👤 Martin Victor Schneider
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 07:44
CPC Classifications
H; H10; H10P; H10P52/00; H10D; H10D8/00; H10D8/60; H10P54/00; Y; Y10; Y10S; Y10S257/00; Y10S257/926; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
174 words
A method of manufacturing millimeter-wave semiconductor diodes from a semiconductor wafer having a epitaxial layer and an insulating layer on the top surface of the wafer comprising the steps of notching said top surface of the semiconductor wafer in a grid-like pattern with the notches extending to a depth of approximately one-half the thickness of the semiconductor wafer thereby creating side-surfaces in said wafer which are substantially flat and perpendicular to the top surface of said wafer, plating the surfaces of semiconductor material exposed by said notching step with a conductive material, heating the semiconductor wafer to alloy the conductive material to the semiconductor material surfaces, fabricating a plurality of diodes on the remaining top surface of the semiconductor wafer that is not cut away by the notching step with at least one diode for each of the areas created by said grid-like pattern at a point in time subsequent to heating the semiconductor wafer, and thereafter lapping the bottom surface of the semiconductor wafer in order to create a plurality of individual chips.
Claim 2
Independent Claim
174 words
A method of manufacturing millimeter-wave semiconductor diodes from a semiconductor wafer having a epitaxial layer and an insulating layer on the top surface of the wafer comprising the steps of notching said top surface of the semiconductor wafer in a grid-like pattern with the notches extending to a depth of approximately one-half the thickness of the semiconductor wafer thereby creating side-surfaces in said wafer which are substantially flat and perpendicular to the top surface of said wafer, plating the surfaces of semiconductor material exposed by said notching step with a conductive material, heating the semiconductor wafer to alloy the conductive material to the semiconductor material surfaces, fabricating a plurality of diodes on the remaining top surface of the semiconductor wafer that is not cut away by the notching step with at least one diode for each of the areas created by said grid-like pattern at a point in time subsequent to heating the semiconductor wafer, and thereafter lapping the bottom surface of the semiconductor wafer in order to create a plurality of individual chips.
Claim 3
Dependent Claim
79 words
A process as defined in claim 1 for manufacturing semiconductor diodes wherein the step of fabricating a plurality of diodes includes the steps of creating holes in the insulating layer remaining after the notching step in order to expose the epitaxial layer in a plurality of locations in each of the areas created by said grid-like pattern, and depositing a conductive metal in the holes of said insulating layer in order to create rectifying contacts with said epitaxial layer.
Claim 4
Dependent Claim
63 words
A method for manufacturing semiconductor diodes as defined in claim 2 wherein the step of creating holes in said insulating layer includes the steps of coating the insulating layer with a photoresist material, exposing said photoresist material to suitable radiation through a mask having a plurality of darkened areas, developing said photoresist material, and dissolving the unexposed photoresist material with a suitable solvent.
Claim 5
Independent Claim
168 words
A method of manufacturing millimeter-wave semiconductor diodes from a semiconductor wafer having a bottom surface and a top surface with an epitaxial layer comprising the steps of depositing an insulating layer on the top surface of said semiconductor wafer, cutting notches in the top surface of said semiconductor wafer in a grid-like pattern to a depth of approximately one-half the thickness of the semiconductor wafer thereby sectioning the semiconductor wafer into a plurality of areas each one which corresponds to an individual, unseparated chip having side surfaces that are substantially flat and perpendicular to the top surface of said wafer, plating the semiconductor material exposed by said notches with a metallic conductor, heating the semiconductor wafer so as to alloy the metal plating to the semiconductor material, fabricating diodes on the remaining top surface of said semiconductor wafer, at a point in time subsequent to heating the semiconductor wafer, and thereafter lapping the back surface of the semiconductor wafer so as to separate the wafer into individual chips.
Claim 6
Independent Claim
168 words
A method of manufacturing millimeter-wave semiconductor diodes from a semiconductor wafer having a bottom surface and a top surface with an epitaxial layer comprising the steps of depositing an insulating layer on the top surface of said semiconductor wafer, cutting notches in the top surface of said semiconductor wafer in a grid-like pattern to a depth of approximately one-half the thickness of the semiconductor wafer thereby sectioning the semiconductor wafer into a plurality of areas each one which corresponds to an individual, unseparated chip having side surfaces that are substantially flat and perpendicular to the top surface of said wafer, plating the semiconductor material exposed by said notches with a metallic conductor, heating the semiconductor wafer so as to alloy the metal plating to the semiconductor material, fabricating diodes on the remaining top surface of said semiconductor wafer, at a point in time subsequent to heating the semiconductor wafer, and thereafter lapping the back surface of the semiconductor wafer so as to separate the wafer into individual chips.
Claim 7
Dependent Claim
105 words
A method of manufacturing semiconductor diodes as defined in claim 4 wherein the step of fabricating diodes on the remaining top surface includes the steps of coating the insulating layer remaining after the notching step with a photoresist material, exposing said photoresist material to suitable radiation through a mask having a plurality of darkened areas, developing said photoresist material, dissolving the unexposed photoresist material so as to expose a plurality of areas on said remaining insulating layer, etching the exposed silicon dioxide layer to expose a plurality of areas on said epitaxial layer, and depositing a metallic conductor on the areas of exposed epitaxial layer.
References Cited (Backward Citations)
US3151007A
Cited
US3423823A
Cited
US3670404A
Cited
US3680205A
Cited
US3781975A
Cited
US3775200A
Cited
US3962713A
Cited
US3972113A
Cited
US3897627A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-05-16 | 1980-11-15 | 1981-05-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-05-16 | 1984-11-15 | 1985-05-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-05-16 | 1988-11-15 | 1989-05-17 | $7700.00 | Window Closed / Lapsed |