US3775200A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Schottky contact devices and method of manufacture
Assignee: US Philips Corp
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Filing: 1971-08-25
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Granted: 1973-11-27
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Expires: 1991-08-25
Abstract
Abstract A method is described for making plural semiconductor devices containing a Schottky contact by providing on one side of a semiconductor wafer a metal layer to form the Schottky contact, and then subjecting the opposite side of the wafer to an etching treatment which attacks the semiconductor but not the Schottky metal until semiconductor portions are etched away leaving spaced semiconductor islands whose contact surface with the Schottky method is surrounded by free surface portions of the metal. Then the metal layer is severed along lines spaced from the islands to leave in the final device, an exposed metal surround to increase the breakdown voltage.
Inventors
- 👤 Nobel D De
- 👤 H Kock
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 19:56
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/20; H10D; H10D99/00; H10P; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P50/646; H10P50/69; H10P50/691; H10P95/00; H10W40/00; H10W40/10; H10W70/00; H10W70/20; H10W70/24; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W72/59
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
51 words
A method as claimed in claim 1 wherein prior to the etching step and subsequent to provision of the first metal layer, a second supporting conductive layer is deposited on top of the first metal layer to fully cover same and to a thickness exceeding that of the first metal layer.
Claim 2
Dependent Claim
14 words
A method as claimed in claim 2 wherein the second layer is electrolytically deposited.
Claim 3
Dependent Claim
20 words
A method as claimed in claim 3 wherein the second layer is at least one of copper, silver, and aluminum.
Claim 4
Dependent Claim
32 words
A method as claimed in claim 1 wherein the etching step is continued until the freE metal layer portion has a lateral dimension at least equal to the thickness of the semiconductor.
Claim 5
Dependent Claim
35 words
A method as claimed in claim 5 wherein the semiconductor is of silicon or gallium arsenide, and the first metal is palladium when the semiconductor is silicon and titanium when the semiconductor is gallium arsenide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-11-26 | 1977-05-28 | 1977-11-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-11-26 | 1981-05-28 | 1981-11-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-11-26 | 1985-05-28 | 1985-11-27 | $7700.00 | Window Closed / Lapsed |