Patent US4454887A successfully refreshed from Google Patents.
US3151007A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating laminar semiconductor devices
Assignee: Clevite Corp
•
Filing: 1961-01-27
•
Granted: 1964-09-29
•
Expires: 1981-01-27
Abstract
No abstract record available.
Inventors
- 👤 Dahlberg Reinhard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 08:51
CPC Classifications
H; H10; H10D; H10D10/00; C; C23; C23F; C23F1/00; C23F1/02; C23F1/04; C30; C30B; C30B31/00; C30B31/04; H10D48/00; H10D48/30; H10D48/32; H10D48/36; H10D62/00; H10D62/10; H10P; H10P10/00; H10P54/00; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S148/00; Y10S148/051
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
96 words
A METHOD OF THE FABRICATING LAMINAR SEMICONDUCTOR STRUCTURES, COMPRISING: PROVIDING A PLATE OF SEMICONDUCTOR MATERIAL OF A PARTICULAR CONDUCTIVITY TYPE; FORMING DEPRESSIONS ON A MAJOR SURFACE OF SAID PLATE SUBDIVIDING SAID SURFACE INTO A PLURALITY OF INDIVIDUAL COPLANAR REGIONS OF SIMILAR SHAPE AND AREA DELIMITED AND MUTUALLY SEGREGATED BY SAID DEPRESSIONS; FORMING ON SAID PLATE ADJACENT SAID MAJOR SURFACE A LAYER HAVING A CONDUCTIVITY-TYPE OPPOSITE TO THAT OF THE PLATE; ALLOYING SAID SURFACE OF THE SEMICONDUCTOR PLATE TO A METAL REINFORCING PLATE; AND ERODING THE OTHER MAJOR SURFACE OF THE SEMICONDUCTOR PLATE DOWN TO SAID DEPRESSIONS.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1967-09-29 | 1968-03-30 | 1968-09-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1971-09-29 | 1972-03-30 | 1972-09-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1975-09-29 | 1976-03-30 | 1976-09-29 | $7700.00 | Window Closed / Lapsed |