Manipulatable read-out memory

Claim 2

In a manipulatable read-only memory, particularly a punched card read device, having a group of first conductors and a group of second conductors, one group forming row conductors and the other group forming column conductors, which are disposed in a matrix formation in the manner of a cross-bar distributor, with each first conductor intersecting the second conductors at respective intersection points, the combination of each pair of first and second conductors being operatively connected in the vicinity of their intersection point by a corresponding series connected photo-resistor and a rectifier containing a blocking contact, said blocking contact being formed directly on the first conductor and directly connecting the latter, in blocking manner, to the photo-resistor, the photo-resistor being in the form of a crystal which extends through a monogranular supporting foil, the second conductor being vapor deposited in the form of beam-transmissive strips, upon one of the two sides of the foil, and the first conductor being vapor deposited upon the other of the two sides of the foil.

Claim 3

A manipulatable read-only memory according to claim 1, in which the conductors are insulated from each other at their intersection points by an insulating layer comprising a thixotropic two-component epoxy resin without fillers.

Claim 4

A manipulatable read-only memory according to claim 1, wherein the second conductor comprises a conductive glass preferably SnO 2 .

Claim 5

In a manipulatable read-only memory, particularly a punched card read device, having a group of first conductors and a group of second conductors, one group forming row conductors and the other group forming column conductors, which are disposed in a matrix formation in the manner of a cross-bar distributor, with each first conductor intersecting the second conductors at respective intersection points, the combination of each pair of first and second conductors being operatively connected in the vicinity of their intersection point by a corresponding series connected photo-resistor and a rectifier containing a blocking contact, a semiconductor layer disposed on the first conductor, and lying between the latter and the photo-resistor, which layer forms a low resistance contact with the photo-resistor and forms said blocking contact directly on the first conductor, said photo-resistor, being in the form of a crystal, which extends through a monogranular supporting foil, with the second conductor being in the form of a radiation-transmissive strip, vapor deposited upon one of the two sides of the foil, and the semiconductor layer together with the first conductor being vapor deposited upon the other side of the foil.

Claim 6

In a manipulatable read-only memory, particularly a punched card read device, having a group of first conductors and a group of second conductors, one group forming row conductors and the other group forming column conductors, which are disposed in a matrix formation in the manner of a cross-bar distributor, with each first conductor intersecting the second conductors at respective intersection points, the combination of each pair of first and second conductors being operatively connected in the vicinity of their intersection point by a corresponding series connected photo-resistor and a rectifier containing a blocking contact, a semiconductor layer disposed on the first conductor, and lying between the latter and the photo-resistor, which layer forms a low resistance contact with the photo-resistor and forms said blocking contact directly on the first conductor, said photo-resistor, being in the form of a crystal, which extends through a monogranular supporting foil, with the second conductor being in the form of a radiation-transmissive strip, vapor deposited upon one of the two sides of the foil, and the semiconductor layer together with the first conductor being vapor deposited upon the other side of the foil.

Claim 7

In a manipulatable read-only memory, particularly a punched card read device, having a group of first conductors and a group of second conductors, one group forming row conductors and the other group forming column conductors, which are disposed in a matrix formation in the manner of a cross-bar distributor, with each first conductor intersecting the second conductors at respective intersection points, the combination of each pair of first and second conductors being operatively connected in the vicinity of their intersection point by a corresponding series connected photo-resistor and a rectifier containing a blocking contact, said blocking contact being formed directly on the first conductor, the first conductor comprising metal (metal II) and between the latter and the photo-resistor is disposed a double layer of a metal (metal I) and an oxide of the metal I, with the metal I - oxide-metal II double layer acting as a diode with a blocking contact between the oxide and the metal II.

Claim 8

In a manipulatable read-only memory, particularly a punched card read device, having a group of first conductors and a group of second conductors, one group forming row conductors and the other group forming column conductors, which are disposed in a matrix formation in the manner of a cross-bar distributor, with each first conductor intersecting the second conductors at respective intersection points, the combination of each pair of first and second conductors being operatively connected in the vicinity of their intersection point by a corresponding series connected photo-resistor and a rectifier containing a blocking contact, said blocking contact being formed directly on the first conductor, the first conductor comprising metal (metal II) and between the latter and the photo-resistor is disposed a double layer of a metal (metal I) and an oxide of the metal I, with the metal I - oxide-metal II double layer acting as a diode with a blocking contact between the oxide and the metal II.

Claim 9

A manipulatable read-only memory according to claim 5, in which the conductors are insulated from one another at their intersection points by surface oxidation on the second conductor.

Claim 10

A manipulatable read-only memory according to claim 5, in which the conductors are insulated from each other at their intersection points by an insulating layer comprising a thixotropic two-component epoxy resin without fillers.

Claim 11

A manipulatable read-only memory according to claim 5, wherein the first conductor comprises Au, Pt or Pd.

Claim 12

In a manipulatable read-only memory, particularly a punched card read device, having a group of first conductors and a group of second conductors, one group forming row conductors and the other group forming column conductors, which are disposed in a matrix formation in the manner of a cross-bar distributor, with each first conductor intersecting the second conductors at respective intersection points, the combination of each pair of first and second conductors being operatively connected in the vicinity of their intersection point by a corresponding series connected photo-resistor and a rectifier containing a blocking contact, said blocking contact being formed directly on the first conductor and directly connecting the latter, in blocking manner, to the photo-resistor, the first conductor being selected from the group comprising Cu, Au and Ag.

Claim 13

In a manipulatable read-only memory, particularly a punched card read device, having a group of first conductors and a group of second conductors, one group forming row conductors and the other group forming column conductors, which are disposed in a matrix formation in the manner of a cross-bar distributor, with each first conductor intersecting the second conductors at respective intersection points, the combination of each pair of first and second conductors being operatively connected in the vicinity of their intersection point by a corresponding series connected photo-resistor and a rectifier containing a blocking contact, said blocking contact being formed directly on the first conductor and directly connecting the latter, in blocking manner, to the photo-resistor, the first conductor being selected from the group comprising Cu, Au and Ag.

Claim 14

In a manipulatable read-only memory, particularly a punched card read device, having a group of first conductors and a group of second conductors, one group forming row conductors and the other group forming column conductors, which are disposed in a matrix formation in the manner of a cross-bar distributor, with each first conductor intersecting the second conductors at respective intersection points the combination of each pair of first and second conductors being operatively connected in the vicinity of their intersection point by a corresponding series connected photo-resistor and a rectifier containing a block contact, a semiconductor layer of Se disposed on the first conductor, and lying between the latter and the photo-resistor, which layer forms a low resistance contact with the photo-resistor and directly forms said blocking contact with the first conductor.

Claim 15

In a manipulatable read-only memory, particularly a punched card read device, having a group of first conductors and a group of second conductors, one group forming row conductors and the other group forming column conductors, which are disposed in a matrix formation in the manner of a cross-bar distributor, with each first conductor intersecting the second conductors at respective intersection points the combination of each pair of first and second conductors being operatively connected in the vicinity of their intersection point by a corresponding series connected photo-resistor and a rectifier containing a block contact, a semiconductor layer of Se disposed on the first conductor, and lying between the latter and the photo-resistor, which layer forms a low resistance contact with the photo-resistor and directly forms said blocking contact with the first conductor.

Claim 16

A manipulatable read-only memory according to claim 10, in which the conductors are insulated from each other at their intersection points by an insulating layer comprising a thixotropic two-component epoxy resin without fillers.

Claim 17

In a manipulatable read-only memory, particularly a punched card read device, having a group of first conductors and a group of second conductors, one group forming row conductors and the other group forming column conductors, which are disposed in a matrix formation in the manner of a cross-bar distributor, with each first conductor intersecting the second conductors at respective intersection points, the combination of each pair of first and second conductors being operatively connected in the vicinity of their intersection point by a corresponding series connected photo-resistor and a rectifier containing a blocking contact, a semiconductor layer being disposed on the first conductor, and lying between the latter and the photo-resistor, which layer forms a low resistance contact with the photo-resistor and forms said blocking contact directly on the first conductor, the semiconductor layer and the first conductor comprising radiation-transmissive material and the photo-resistor and the semi-conductor layer being disposed between the two conductors at the point of their intersection.

Claim 18

In a manipulatable read-only memory, particularly a punched card read device, having a group of first conductors and a group of second conductors, one group forming row conductors and the other group forming column conductors, which are disposed in a matrix formation in the manner of a cross-bar distributor, with each first conductor intersecting the second conductors at respective intersection points, the combination of each pair of first and second conductors being operatively connected in the vicinity of their intersection point by a corresponding series connected photo-resistor and a rectifier containing a blocking contact, a semiconductor layer being disposed on the first conductor, and lying between the latter and the photo-resistor, which layer forms a low resistance contact with the photo-resistor and forms said blocking contact directly on the first conductor, the semiconductor layer and the first conductor comprising radiation-transmissive material and the photo-resistor and the semi-conductor layer being disposed between the two conductors at the point of their intersection.

Claim 19

A manipulatable read-only memory according to claim 12, wherein the second conductor comprises a conductive glass.