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US4017884A Expired / Lapsed US ⏱️ 0.0 years remaining

Magnetic field sensitive diode and method of making same

Assignee: Siemens AG
•
Filing: 1976-05-04
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Granted: 1977-04-12
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Expires: 1996-05-04
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Abstract

Abstract A magnetic field sensitive diode including a silicon body, an n-injecting contact electrode and a p-injecting contact electrode located at spaced portions of the body, the body having opposed parallel surfaces having different recombination rates with respect to pairs of free charge carriers, the surface having the lower recombination rate consisting of silicon dioxide, the n-injecting contact electrode consisting of diffused in lithium, with substantially all of the acceptors in the silicon body being compensated by incorporated lithium ions, the silicon dioxide surfaces being essentially free of lithium. The invention also relates to a method of producing the improved structure.

Inventors

  • 👤 Ignaz Eisele
  • 👤 Hans Pfleiderer
  • 👤 Ekkehard Preuss

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 11:15
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/40

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 122 words
A magnetic field sensitive diode comprising a silicon body, an n-injecting contact electrode and a p-injecting contact electrode located at spaced portions of said body, said electrodes being capable of producing n charges and p charges respectively in said body, said body having opposed parallel surfaces having different recombination rates with respect to pairs of free charge carriers, the surface having the lower recombination rate consisting of silicon dioxide formed by means of thermal oxidation and extending between said electrodes and parallel to the current path through said diode, said n-injecting contact electrode consisting of diffused in lithium, with substantially all of the acceptors in the silicon body being compensated by incorporated lithium ions, the silicon dioxide surface being free of lithium.
Claim 2
Dependent Claim 122 words
A magnetic field sensitive diode comprising a silicon body, an n-injecting contact electrode and a p-injecting contact electrode located at spaced portions of said body, said electrodes being capable of producing n charges and p charges respectively in said body, said body having opposed parallel surfaces having different recombination rates with respect to pairs of free charge carriers, the surface having the lower recombination rate consisting of silicon dioxide formed by means of thermal oxidation and extending between said electrodes and parallel to the current path through said diode, said n-injecting contact electrode consisting of diffused in lithium, with substantially all of the acceptors in the silicon body being compensated by incorporated lithium ions, the silicon dioxide surface being free of lithium.
Claim 3
Dependent Claim 15 words
A diode according to claim 1 in which the p-injecting contact is diffused in aluminum.
Claim 4
Dependent Claim 15 words
A diode according to claim 1 in which the p-injecting contact is alloyed in aluminum.
Claim 5
Dependent Claim 29 words
A diode according to claim 1 in which said opposed parallel surfaces are separated by substantially a diffusion length of n- and p-type charge carriers in the silicon body.
Claim 6
Dependent Claim 19 words
A diode according to claim 1 in which the silicon surface opposite to the silicon dioxide surface is roughened.
Claim 7
Dependent Claim 22 words
A diode according to claim 1 in which the silicon surface opposite to the silicon dioxide surface is implanted with non-doping ions.
Claim 8
Dependent Claim 20 words
A diode according to claim 1 which includes at least one field electrode along the current path in said body.

References Cited (Backward Citations)

US3272668A Cited
US3374124A Cited
US3553540A Cited
US3461005A Cited
US3553498A Cited
GB1285996A Cited
US3612869A Cited
US3911468A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1980-04-11 1980-10-11 1981-04-12 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1984-04-11 1984-10-11 1985-04-12 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1988-04-11 1988-10-11 1989-04-12 $7700.00 Window Closed / Lapsed

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