US3553498A
Expired / Lapsed
US
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Magnetoresistance element
Assignee: Sony Corp
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Filing: 1968-02-12
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Granted: 1971-01-05
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Expires: 1988-02-12
Abstract
Abstract A magnetoresistance element with a control electrode which allows a control voltage to vary the electrical characteristics is disclosed. A semiconductor material of intrinsic property is provided with p- and n- regions spaced from each other and a control electrode is attached to the area between the p- and nregions and an electric field is applied to vary the electrical characteristics. A magnetic field may also be applied to control the response of the element or alternatively the device may be utilized to detect the strength and direction of a magnetic field.
Inventors
- 👤 Toshiyuki Yamada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 14:44
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/40; H10D99/00; H10N; H10N50/00; H10N50/10
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
171 words
A semiconductor device comprising a region of n-type semiconductor material, a region of p-type semiconductor material, and an intermediate region of semiconductor material between said p- and n-type regions having less carrier concentration than either said p-type region or said n-type region first biasing means connected to said p- and n-type regions for injecting carriers into said intermediate region and for causing carriers to flow between said p- and n-type regions, a field effect electrode insulatingly mounted on a surface of said intermediate region, said surface of said intermediate region adjacent said field effect electrode formed of p-type or n-type material second biasing means connected to said field effect electrode for controlling the surface recombination velocity said semiconductor device being subjected to a magnetic field to control the deflection of carriers between said intermediate region and said surface as functions of the intensity and direction of said magnetic field and the bias on said field effect electrode, and thereby to alter the flow of carriers between said p- and n-type regions.
Claim 2
Dependent Claim
171 words
A semiconductor device comprising a region of n-type semiconductor material, a region of p-type semiconductor material, and an intermediate region of semiconductor material between said p- and n-type regions having less carrier concentration than either said p-type region or said n-type region first biasing means connected to said p- and n-type regions for injecting carriers into said intermediate region and for causing carriers to flow between said p- and n-type regions, a field effect electrode insulatingly mounted on a surface of said intermediate region, said surface of said intermediate region adjacent said field effect electrode formed of p-type or n-type material second biasing means connected to said field effect electrode for controlling the surface recombination velocity said semiconductor device being subjected to a magnetic field to control the deflection of carriers between said intermediate region and said surface as functions of the intensity and direction of said magnetic field and the bias on said field effect electrode, and thereby to alter the flow of carriers between said p- and n-type regions.
Claim 3
Dependent Claim
24 words
A semiconductor device according to claim 1 wherein said surface of said intermediate region adjacent said field effect electrode is formed of p-type material.
Claim 4
Dependent Claim
24 words
A semiconductor device according to claim 1 wherein said surface of said intermediate region adjacent said field effect electrode is formed of n-type material.
Claim 5
Dependent Claim
165 words
A magnetic field detecting device comprising a semiconductor device having a region of p-type semiconductor material, a region of n-type semiconductor material, and an intermediate region of semiconductor material between said p- and n-type regions having less carrier concentration than either said p-type region oR said n-type region, first biasing means connected to said p- and n-type regions for injecting carriers into said intermediate region and for causing carriers to flow between said p- and n-type regions, a field effect electrode insulatingly mounted on a surface of said intermediate region, said surface of said intermediate region formed of semiconductor material of p- or n-type, second biasing means connected to said field effect electrode for controlling the surface recombination velocity of said intermediate region, whereby the flow of carriers through said semiconductor device is responsive to a magnetic field as a function of intensity and direction of the magnetic field and said flow of carriers is further influenced by said bias on said field effect electrode.
Claim 6
Dependent Claim
165 words
A magnetic field detecting device comprising a semiconductor device having a region of p-type semiconductor material, a region of n-type semiconductor material, and an intermediate region of semiconductor material between said p- and n-type regions having less carrier concentration than either said p-type region oR said n-type region, first biasing means connected to said p- and n-type regions for injecting carriers into said intermediate region and for causing carriers to flow between said p- and n-type regions, a field effect electrode insulatingly mounted on a surface of said intermediate region, said surface of said intermediate region formed of semiconductor material of p- or n-type, second biasing means connected to said field effect electrode for controlling the surface recombination velocity of said intermediate region, whereby the flow of carriers through said semiconductor device is responsive to a magnetic field as a function of intensity and direction of the magnetic field and said flow of carriers is further influenced by said bias on said field effect electrode.
Claim 7
Dependent Claim
21 words
A magnetic field detecting device according to claim 4 wherein said surface of said intermediate region is formed of p-type material.
Claim 8
Dependent Claim
21 words
A magnetic field detecting device according to claim 4 wherein said surface of said intermediate region is formed of n-type material.
Claim 9
Dependent Claim
152 words
A semiconductor circuit comprising a pair of magnetoresistance elements connected in circuit together, each of said magnetoresistance elements comprising, semiconductor material of substantially intrinsic conductance, a p-type and n-type region separately formed on said semiconductor material and injecting carriers into said semiconductor material, and at least one control electrode mounted adjacent said semiconductor material between said p-type and n-type regions to control the recombination velocity at the surface of said semiconductor material, an insulating layer on the semiconductor material under the control electrode, and including means for producing a magnetic field which traverses the semiconductor material to cause variations of resistance between the p- and n-type regions, and the means for producing a magnetic field in each element arranged so that the carriers, hole and electrons in one magnetoresistance element move toward the control electrode and the carriers, holes and electrons in the other magnetoresistance element move away from its control electrode.
Claim 10
Dependent Claim
152 words
A semiconductor circuit comprising a pair of magnetoresistance elements connected in circuit together, each of said magnetoresistance elements comprising, semiconductor material of substantially intrinsic conductance, a p-type and n-type region separately formed on said semiconductor material and injecting carriers into said semiconductor material, and at least one control electrode mounted adjacent said semiconductor material between said p-type and n-type regions to control the recombination velocity at the surface of said semiconductor material, an insulating layer on the semiconductor material under the control electrode, and including means for producing a magnetic field which traverses the semiconductor material to cause variations of resistance between the p- and n-type regions, and the means for producing a magnetic field in each element arranged so that the carriers, hole and electrons in one magnetoresistance element move toward the control electrode and the carriers, holes and electrons in the other magnetoresistance element move away from its control electrode.
Claim 11
Dependent Claim
42 words
A semiconductor circuit according to claim 7 where in the magnetoresistance elements are connected in series, a bias voltage source connected across the magnetoresistance elements, and a pair of control voltage sources connected respectively to the control electrodes of the magnetoresistance elements.
Claim 12
Dependent Claim
18 words
A semiconductor device according to claim 8 including a pair of output terminals connected to the magnetoresistance elements.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-01-04 | 1974-07-06 | 1975-01-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-01-04 | 1978-07-06 | 1979-01-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-01-04 | 1982-07-06 | 1983-01-05 | $7700.00 | Window Closed / Lapsed |