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US4009401A Expired / Lapsed US ⏱️ 0.0 years remaining

Fade-in and fade-out switching circuit

Assignee: Sony Corp
•
Filing: 1974-09-05
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Granted: 1977-02-22
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Expires: 1994-09-05
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Abstract

Abstract A switching circuit using first and second semiconductor devices each having a semiconductive substrate with a current path portion, first and second semiconductive regions forming a PN junction therebetween, the first region being capacitively coupled to the current path portion, a control electrode connected to the second region, a signal input terminal electrically connected to the first terminal of the first semiconductor device, an output terminal electrically connected to the second terminal of the first semiconductor device, means for connecting the control electrode of the first semiconductor device to the first terminal of the second semiconductor device, means for applying a bias voltage to the second terminal of the second semiconductor device, and switch means for selectively applying a bias voltage to the control electrode of said second semiconductor device. The switching circuit is operated with a signal applied to the control electrode of the second semiconductor device.

Inventors

  • 👤 Masanobu Sasaki

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 23:38
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/811; H03; H03K; H03K17/00; H03K17/51; H03K17/56; H03K17/687; H10D84/817

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 176 words
A switching circuit comprising first and second semiconductor devices each including a semiconductor substrate having a current path portion, first and second semiconductor regions forming a PN-junction therebetween, said first region being capacitively coupled to said current path portion, a control electrode connected to said second region, first and second terminals electrically connected to both ends of said current path portion respectively, a signal input terminal electrically connected to said first terminal of said first semiconductor device, an output terminal electrically connected to said second terminal of said first semiconductor device, means for connecting said control electrode of said first semiconductor device to said first terminal of said second semiconductor device, means for applying a bias voltage to said second terminal of said second semiconductor device, switch means for selectively applying a bias voltage to said control electrode of said second semiconductor device and neutralization means operative on at least one of said first and second semiconductor devices for injecting carriers into said first region of said device to independently control a fade-in and fade-out time.
Claim 2
Dependent Claim 176 words
A switching circuit comprising first and second semiconductor devices each including a semiconductor substrate having a current path portion, first and second semiconductor regions forming a PN-junction therebetween, said first region being capacitively coupled to said current path portion, a control electrode connected to said second region, first and second terminals electrically connected to both ends of said current path portion respectively, a signal input terminal electrically connected to said first terminal of said first semiconductor device, an output terminal electrically connected to said second terminal of said first semiconductor device, means for connecting said control electrode of said first semiconductor device to said first terminal of said second semiconductor device, means for applying a bias voltage to said second terminal of said second semiconductor device, switch means for selectively applying a bias voltage to said control electrode of said second semiconductor device and neutralization means operative on at least one of said first and second semiconductor devices for injecting carriers into said first region of said device to independently control a fade-in and fade-out time.
Claim 3
Dependent Claim 22 words
A switching circuit as claimed in claim 1, in which a PN-junction is formed between said first region and said semiconductor substrate.
Claim 4
Dependent Claim 35 words
A switching circuit as claimed in claim 1, in which said neutralization means comprises a third semiconductor region formed in said semiconductor substrate and means provided for supplying electric current to said third semiconductor region.
Claim 5
Dependent Claim 23 words
A switching circuit as claimed in claim 1, in which the control electrode of said first semiconductor substrate is grounded through a resistor.
Claim 6
Dependent Claim 165 words
A switching circuit adapted for providing independently selectable fade-in and fade-out time intervals, comprising: a. first and second semiconductor devices each having a main current path portion, first and second semiconductor regions forming a PN-junction therebetween, said first region being interfaced with said current path portion, a gate electrode connected to said second region, first and second electrodes connected to both ends of said current path portion, respectively, a signal input terminal electrically connected to said first device first electrode, an output terminal connected to said first device second electrode, and said second device first electrode being connected to said first device gate electrode; b. first and second neutralization means operative on said first and second semiconductor devices for injecting carriers into said first region of each device to independently control the fade-in and fade-out time; c. means for applying a bias voltage to said second device second electrode; and d. control means for switchably applying a bias voltage to said second device gate electrode.
Claim 7
Dependent Claim 165 words
A switching circuit adapted for providing independently selectable fade-in and fade-out time intervals, comprising: a. first and second semiconductor devices each having a main current path portion, first and second semiconductor regions forming a PN-junction therebetween, said first region being interfaced with said current path portion, a gate electrode connected to said second region, first and second electrodes connected to both ends of said current path portion, respectively, a signal input terminal electrically connected to said first device first electrode, an output terminal connected to said first device second electrode, and said second device first electrode being connected to said first device gate electrode; b. first and second neutralization means operative on said first and second semiconductor devices for injecting carriers into said first region of each device to independently control the fade-in and fade-out time; c. means for applying a bias voltage to said second device second electrode; and d. control means for switchably applying a bias voltage to said second device gate electrode.
Claim 8
Dependent Claim 73 words
The switching circuit of claim 5 in which said neutralization means operative on said first and second semiconductor devices comprises a third semiconductor region also interfaced with said main current portion of said first and second semiconductor devices and having an electrode attached thereto, said electrode being connected to a current supply means for injecting carriers into said first region in relation to the magnitude of current supplied by said current supply means.
Claim 9
Dependent Claim 39 words
The switching circuit of claim 5 in which said neutralization means comprises light irradiated on each of said first and second semiconductor devices to inject carriers into said first region in relation to the intensity of said irradiated light.
Claim 10
Dependent Claim 43 words
The switching circuit of claim 5 to which is connected a substantially identical second switching circuit, a control means of said second switching circuit having a switch portion in common with a switch portion of said control means of the other switching circuit.

References Cited (Backward Citations)

US3662113A Cited
US3560726A Cited
US3621304A Cited
US3654394A Cited
US3757139A Cited
US3740581A Cited
US3868718A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1980-02-22 1980-08-23 1981-02-22 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1984-02-22 1984-08-23 1985-02-22 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1988-02-22 1988-08-23 1989-02-22 $7700.00 Window Closed / Lapsed

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