US4000019A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of retaining substrate profiles during epitaxial deposition
Assignee: US Philips Corp
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Filing: 1974-05-16
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Granted: 1976-12-28
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Expires: 1994-05-16
Abstract
Abstract A method of manufacturing a semiconductor device, in particular a monolithic integrated circuit, in which highly doped zones are provided according to a given pattern on one side of a monocrystalline silicon substrate body by local diffusion of at least one impurity in a substantially flat surface of the substrate body and the substrate surface on said side is given a profile in a pattern which corresponds to the pattern of the highly doped zones, after which an epitaxial silicon layer is provided on said side and one or more semiconductor circuit elements are then formed while using at least one photoresist step, characterized in that the substantially flat substrate surface is given a crystal orientation lying between a {001} face and an adjacent {111} face, which orientation deviates at least 10° from the said {001} face and at least 15° from said {111} face and is present in a strip within 10° from the crystallographic zone formed by the said two faces.
Inventors
- 👤 Cornelis Hendricus Joannes VAN DEN Brekel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 11:18
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; H10D62/405; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2924; H10P14/2925; H10P14/2926; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3466; H10W; H10W15/00; H10W15/01; Y; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/902; Y10S438/00; Y10S438/973; Y10S438/975
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
200 words
A method of manufacturing a semiconductor device, in particular a monolithic integrated circuit, in which highly doped zones are provided according to a given pattern on one side of a substantially dislocation free monocrystalline silicon substrate body by local diffusion of at least one impurity in a substantially flat surface of the substrate body and the substrate surface on said side is given a profile in a pattern which corresponds to the pattern of the highly doped zones, after which an epitaxial silicon layer is provided on said side and one or more semiconductor circuit elements are then formed while using at least one photoresist step, characterized in that the substantially flat substrate surface is given a crystal orientation lying between a {001} face and an adjacent {111} face, an {113} face being present between said {001} and {111} face, which orientation deviates at least 10° from the said {001} face, at least 15° from said {111} face, and at most 10° from a {115} face and is present in a strip within 10° from the crystallographic zone formed by the said {001} and {111} faces, said substrate surface enclosing an angle of at least 7° with said {113} face.
Claim 2
Independent Claim
200 words
A method of manufacturing a semiconductor device, in particular a monolithic integrated circuit, in which highly doped zones are provided according to a given pattern on one side of a substantially dislocation free monocrystalline silicon substrate body by local diffusion of at least one impurity in a substantially flat surface of the substrate body and the substrate surface on said side is given a profile in a pattern which corresponds to the pattern of the highly doped zones, after which an epitaxial silicon layer is provided on said side and one or more semiconductor circuit elements are then formed while using at least one photoresist step, characterized in that the substantially flat substrate surface is given a crystal orientation lying between a {001} face and an adjacent {111} face, an {113} face being present between said {001} and {111} face, which orientation deviates at least 10° from the said {001} face, at least 15° from said {111} face, and at most 10° from a {115} face and is present in a strip within 10° from the crystallographic zone formed by the said {001} and {111} faces, said substrate surface enclosing an angle of at least 7° with said {113} face.
Claim 3
Dependent Claim
25 words
A method as claimed in claim 1, characterized in that the substrate surface has an orientation which deviates at most 3° from a {115} face.
Claim 4
Dependent Claim
20 words
A method as claimed in claim 1, wherein an epitaxial layer is grown in a thickness of at least 5μ.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-12-28 | 1980-06-28 | 1980-12-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-12-28 | 1984-06-28 | 1984-12-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-12-28 | 1988-06-28 | 1988-12-28 | $7700.00 | Window Closed / Lapsed |