US3728166A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device fabrication method and product thereby
Assignee: International Business Machines Corp
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Filing: 1967-01-11
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Granted: 1973-04-17
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Expires: 1987-01-11
Abstract
Abstract PATTERN. THIS PERMITS ACCURATE ALIGNMENT THAT IS NECESSARY FOR ANY SUBSEQUENT PROCESS OPERATION, WUCH AS DIFFUSION, TO BE ACCURATELY PERFORMED THEREBY INCREASING THE YIELD IN THE MANUFACTURE OF, FOR EXAMPLE, INTEGRAATED SEMICONDUCTOR DEVICES. THIS IS A METHOD FOR ERLIABLY REPRODUCING, ON THE SURFACE OF AN EPITAXIALLY GROWN MONOCRYATALLINE LAYER, A PATTERN THAT WAS FORMED ON THE SURFACE OF THE SUBSTRATE ON WHICH THE EPITAXIAL LAYER WAS GROWN. BY USING A SUBSTRATE HAVING A (100.) CRYSTALLOGRAPHIC ORIENTATION, THE (100.) EPITAXIAL GROWN LAYER REPRODUCES THE PATTERN ON THE SUBSTRATE SURFACE DIRECTLY ABOVE THE SUBSTRATE SURFACE
Inventors
- 👤 P Bardell
- 👤 R Pecoraro
- 👤 F Barson
- 👤 C Benjamin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 18:09
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D84/00; H10D84/01; H10D84/0112; H10D84/02; H10D84/03; H10D84/038; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/037; Y10S148/085; Y10S148/102; Y10S148/106; Y10S148/115; Y10S438/00; Y10S438/975
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-04-16 | 1976-10-16 | 1977-04-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-04-16 | 1980-10-16 | 1981-04-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-04-16 | 1984-10-16 | 1985-04-17 | $7700.00 | Window Closed / Lapsed |