US3636421A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Oxide coated semiconductor device having (311) planar face
Assignee: Toshiba Corp
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Filing: 1968-12-23
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Granted: 1972-01-18
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Expires: 1988-12-23
Abstract
Abstract A semiconductor device includes a single crystal substrate comprising a flat surface which has a (311) crystal plane with a tolerance of + OR - 2* with respect to said (311) lattice plane. An insulating film is formed on the flat top surface of the substrate.
Inventors
- 👤 Yoshiyuki Takeishi
- 👤 Hisashi Hara
- 👤 Tai Sato
- 👤 Isao Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 05:34
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; H10D62/405; H10D99/00; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2924; H10P14/2925; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/053; Y10S148/072; Y10S148/115
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
46 words
A semiconductor device according to claim 1 wherein said insulating film covers a portion of said flat top surface, said film being comprised of an oxide of silicon, and further comprising electrodes on said film and on the remaining uncoated portion of said flat top surface.
Claim 2
Dependent Claim
14 words
A semiconductor device according to claim 1 wherein the substrate is formed of silicon.
Claim 3
Dependent Claim
87 words
A semiconductor device according to claim 3 comprising: a planar type transistor formed within said substrate and having collector, base and emitter regions formed within said flat top surface of said substrate, first and second PN-junctions being formed between the respective collector and base regions and the base and emitter regions, said PN-junctions extending to said flat top surface; said insulating film covering at least said PN-junctions at said flat top surface; and emitter, base and collector electrodes attached to said emitter, base and collector regions, respectively.
Claim 4
Dependent Claim
78 words
A semiconductor device according to claim 3 comprising: a field effect transistor formed within said substrate, said field effect transistor having a respective source and drain region extending from said flat top surface into said substrate, said insulating film comprising a silicon oxide film formed on said flat top surface at least between said source and drain regions; and electrodes connected to said source and drain regions and to that part of said oxide film between said regions.
Claim 5
Dependent Claim
34 words
A semiconductor device according to claim 6 further comprising at least one active region of opposite conductivity type to that of said substrate formed within said substrate and extending from said flat top surface.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-01-17 | 1975-07-19 | 1976-01-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-01-17 | 1979-07-19 | 1980-01-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-01-17 | 1983-07-19 | 1984-01-18 | $7700.00 | Window Closed / Lapsed |