Process for epitaxially growing gallium arsenide on germanium
Abstract
Abstract A MONOCRYSTALLINE GERMANIUM SUBSTRATE HAVING AN EXPOSED SURFACE ORIENTED BETWEEN THE (100) AND THE (111) CRYSTAL PLANES, PREFERABLY AT OR BETWEEN THE (311) AND (511) PLANES, IS ESTABLISHED AT A TEMPERATURE BETWEEN 730* AND 780* CENTIGRADE. WHILE AT THIS TEMPERATURE THE EXPOSED GERMANIUM SURFACE IS SUBJECTED INITIALLY, FOR ABOUT TWO MINUTES, TO A FIRST VAPOR MIXTURE OF ARSENIC, HYDROGEN CHLORIDE AND HYDROGEN (BUT NO GALLIUM METAL OR COMPOUND). THIS FIRST MIXTURE PREFERABLY IS PRODUCED BY REACTING AT ABOUT 900*C. ARSENIC TRICHLORIDE VAPOR WITH HYDROGEN GAS. THEN THE EXPOSED GERMANIUM SURFACE IS SUBJECTED TO A SECOND VAPOR MIXTURE OF ARSENIC, GALLIUM CHLORIDE, HYDROGEN CHLORIDE AND HYDROGEN. THIS SECOND MIXTURE PREFERABLY IS PRODUCED BY REACTING AT ABOUT 900*C. ARSENIC TRICHLORIDE VAPOR, THE VAPOR OF GALLIUM SATURATED WITH ARSENIC PRIOR TO VAPORIZATION, AND HYDORGEN. UNDER SUCH CONDITIONS, MONOCRYSTALLINE GALLIUM ARSENIDE HAVING SUFFICIENTLY HIGH CRYSTALLINE PERFECTION FOR USE IN SEMICONDUCTOR DEVICES EPITAXES ONTO THE EXPOSED SURFACE OF THE GERMANIUM SUBSTRATE.
Inventors
- 👤 Henry Holloway
- 👤 Kenneth H Maxwell
Bibliographic Details
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