US3977015A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silver, gallium, and oxygen contact for indium phosphide
Assignee: UK Secretary of State for Defence
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Filing: 1975-03-31
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Granted: 1976-08-24
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Expires: 1995-03-31
Abstract
Abstract A semiconductor transferred electron device of the kind which includes indium phosphide as a major constituent is provided with a cathode consisting of oxidized silver gallium. The cathode preferably contains 4 times more silver than gallium by weight, and the oxygen content is preferably from 2 to 20 atomic per cent of the gallium content of the cathode. This improved device provides high electrical to microwave conversion efficiencies for a high proportion of devices produced together in any given batch.
Inventors
- 👤 Leonard David Irving
- 👤 James Edward Pattison
- 👤 Huw David Rees
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 14:46
CPC Classifications
H; H10; H10N; H10N80/00; H10N80/10; H10N80/107
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
75 words
A transferred electron device comprising an active material formed of a semiconductor whose major constituent is indium phosphide, a cathode in electrical contact with said active material and an anode in electrical contact with said active material, said cathode comprising a region of an oxidized alloy of silver and gallium containing more silver than gallium, the oxygen content of said cathode being between 2 and 20 atomic percent of the gallium content of said cathode.
Claim 2
Dependent Claim
75 words
A transferred electron device comprising an active material formed of a semiconductor whose major constituent is indium phosphide, a cathode in electrical contact with said active material and an anode in electrical contact with said active material, said cathode comprising a region of an oxidized alloy of silver and gallium containing more silver than gallium, the oxygen content of said cathode being between 2 and 20 atomic percent of the gallium content of said cathode.
Claim 3
Dependent Claim
22 words
A transferred electron device as claimed in claim 1 wherein said cathode contains about four times more silver than gallium by weight.
Claim 4
Dependent Claim
29 words
A transferred electron device as claimed in claim 1 wherein the oxygen content of said cathode is about 10 atomic per cent of the gallium content of said cathode.
Claim 5
Dependent Claim
17 words
A transferred electron device as claimed in claim 1 wherein said active material is n-type indium phosphide.
Claim 6
Dependent Claim
24 words
A transferred electron device as claimed in claim 1, wherein said active material is n-type in As x P 1 -x , where 0≦x≦0.25.
Claim 7
Dependent Claim
39 words
A transferred electron device as claimed in claim 1 wherein said anode is an n + substrate, said active material is an epitaxial layer on said substrate and said cathode is a metallic layer deposited on said epitaxial layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-08-24 | 1980-02-23 | 1980-08-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-08-24 | 1984-02-23 | 1984-08-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-08-24 | 1988-02-23 | 1988-08-24 | $7700.00 | Window Closed / Lapsed |