US3745071A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Selective liquid growth process
Assignee: Mitsubishi Electric Corp
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Filing: 1971-12-06
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Granted: 1973-07-10
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Expires: 1991-12-06
Abstract
Abstract A COATING OF A METAL OXIDE REDUCIBLE TO THE CORRESPONDING METAL IN A REDUCING ATMOSPHERE IS FIRST DISPOSED IN A PREDETERMINED PATTERN ON A SURFACE OF A SEMICONDUCTOR SUBSTRATE. THE OXIDE MAY BE SNO2, IN2O3 OR GA2O3. THEN THE SUBSTRATE IS SUBJECTED TO THE CONVENTIONAL LIQUID GROWTH PROCESS IN AN ATMOSPHERE OF REDUCING GAS SUCH AS HYDROGEN TO SELECTIVELY GROW A SEMICONDUCTOR LAYER IN THOSE PORTIONS OCCUPIED BY THE OXIDE OF ITS SURFACE. ALSO THERE IS DISCLOSED THE FORMATION OF A GUNN DIODE ON A GAAS SUBSTRATE.
Inventors
- 👤 S Mitsui
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:29
CPC Classifications
H; H10; H10N; H10N80/00; H10N80/10; H10N80/107; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/27; H10P14/271; H10P14/272; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; Y; Y10; Y10S; Y10S117/00; Y10S117/906; Y10S148/00; Y10S148/056; Y10S148/107; Y10S148/118; Y10S438/00; Y10S438/90
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-07-09 | 1977-01-08 | 1977-07-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-07-09 | 1981-01-08 | 1981-07-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-07-09 | 1985-01-08 | 1985-07-10 | $7700.00 | Window Closed / Lapsed |