US3667003A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Three valley transferred electron oscillator
Assignee: Aviation Supply UK
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Filing: 1971-04-21
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Granted: 1972-05-30
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Expires: 1991-04-21
Abstract
Abstract A semiconductor device includes a piece of semiconductor material exhibiting transferred electron effects between three sets of conduction band valleys, which sets consist of a set of lowest energy, a set of highest energy and a set of intermediate energy, and in which the set of lowest energy has an energy density of states smaller than that of either of the other two sets and in which the rate at which electrons are scattered between the set of lowest energy and the set of intermediate energy is less than both the rate at which electrons are scattered between the set of lowest energy and the set of highest energy and the rate at which electrons are scattered between the set of intermediate energy and the set of highest energy, and means for applying voltages across the piece of semiconductor material, whereby electron transfer occurs between the different sets of valleys. Also included in the device are means for controlling the current flowing such that it is free of dipole domains. The semiconductor material may be either InPxAs1 x (1 > OR = x > OR = 0.75) or In6Ga1 ySb (0.05 < OR = y < OR = 0.30).
Inventors
- 👤 Cyril Hilsum
- 👤 Huw David Rees
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 20:55
CPC Classifications
H; H10; H10N; H10N80/00; H10N80/10; H10N80/107; Y; Y10; Y10S; Y10S148/00; Y10S148/005; Y10S438/00; Y10S438/90
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
258 words
A semiconductor device including a piece of semiconductor material exhibiting transferred electron effects between three sets of conduction band valleys, which sets consist of a set of lowest energy, a set of highest energy and a set of intermediate energy, and in which the set of lowest energy has an energy density of states smaller than that of either of the other two sets and in which the rate at which electrons are scattered between the set of lowest energy and the set of intermediate energy is less than both the rate at which electrons are scattered between the set of lowest energy and the set of highest energy and the rate at which electrons are scattered between the set of intermediate energy and the set of highest energy, said material chosen from the group consisting of InPxAs1 x where x is within the limits 1.00>x > OR = 0.75, the upper limit being exclusive and the lower limit being inclusive and InyGa1 ySb where y is within the inclusive limits 0.05 > OR = y > OR = 0.30, an anode on the piece of semiconductor material, a cathode on the piece of semiconductor material, means for applying between the cathode and the anode voltages such that electron transfer occurs between the set of lowest energy and the set of highest energy and between the set of highest energy and the set of intermediate energy and means for controlling the current flowing between the cathode and the anode such that the current is free of dipole domains.
Claim 2
Dependent Claim
258 words
A semiconductor device including a piece of semiconductor material exhibiting transferred electron effects between three sets of conduction band valleys, which sets consist of a set of lowest energy, a set of highest energy and a set of intermediate energy, and in which the set of lowest energy has an energy density of states smaller than that of either of the other two sets and in which the rate at which electrons are scattered between the set of lowest energy and the set of intermediate energy is less than both the rate at which electrons are scattered between the set of lowest energy and the set of highest energy and the rate at which electrons are scattered between the set of intermediate energy and the set of highest energy, said material chosen from the group consisting of InPxAs1 x where x is within the limits 1.00>x > OR = 0.75, the upper limit being exclusive and the lower limit being inclusive and InyGa1 ySb where y is within the inclusive limits 0.05 > OR = y > OR = 0.30, an anode on the piece of semiconductor material, a cathode on the piece of semiconductor material, means for applying between the cathode and the anode voltages such that electron transfer occurs between the set of lowest energy and the set of highest energy and between the set of highest energy and the set of intermediate energy and means for controlling the current flowing between the cathode and the anode such that the current is free of dipole domains.
Claim 3
Dependent Claim
50 words
A semiconductor material as claimed in claim 1 and wherein the means for controlling the current flowing between the cathode and the anode includes means for providing a current density in the region of the anode greater than or similar to the current density in the region of the cathode.
Claim 4
Dependent Claim
39 words
A semiconductor device as claimed in claim 2 and wherein the area of contact between the anode and the piece of semiconductor material is smaller than the area of contact between the cathode and the piece of semiconductor material.
Claim 5
Dependent Claim
30 words
A semiconductor device as claimed in claim 2 and wherein the anode contains a region of doped semiconductor material and wherein the doping is such that it is inhomogeneously distributed.
Claim 6
Dependent Claim
27 words
A semiconductor device as claimed in claim 2 and wherein the piece of semiconductor material is wedge shaped, the apex of the wedge being near the anode.
Claim 7
Dependent Claim
23 words
A semiconductor device as claimed in claim 1 and wherein the piece of semiconductor material contains less than 1017 impurities per cubic centimeter.
Claim 8
Dependent Claim
24 words
A semiconductor device as claimed in claim 1 and wherein the distance between the anode and the cathode is less than approximately 500 microns.
Claim 9
Dependent Claim
24 words
A semiconductor device as claimed in claim 6 and wherein the distance between the anode and the cathode is less than approximately 500 microns.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-05-30 | 1975-11-29 | 1976-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-05-30 | 1979-11-29 | 1980-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-05-30 | 1983-11-29 | 1984-05-30 | $7700.00 | Window Closed / Lapsed |