Patent US3964092A successfully refreshed from Google Patents.
US3964092A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor devices with conductive layer structure
Assignee: US Philips Corp
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Filing: 1974-11-11
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Granted: 1976-06-15
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Expires: 1994-11-11
Abstract
Abstract A semiconductor device, for example an integrated circuit comprising insulate gate field effect transistors in which the gate electrodes comprise doped portions of a deposted layer of polycrystalline silicon, wherein a first conductive connection layer extends at least partly on insulating material present on one surface of a semiconductor body, said first layer being insulated from and crossing over an underlying, second conductive connection layer which is of semiconductor material locally deposited on said one surface of the semiconductor body, said second layer and the underlying portion of the semiconductor body comprising a quantity of doping substance introduced via said second layer, for example in the case of a silicon gate circuit introduced at the same time as simultaneously doping the gate electrodes and forming the source and drain regions. The form of undercrossing comprising the second conductive connection layer and the underlying doped portion of the semiconductor body can be provided in a simple manner having a very low series resistance compared with prior art forms of undercrossing.
Inventors
- 👤 Eric Wadham
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:03
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/20; H10P; H10P95/00; H10W20/40
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
136 words
A semiconductor device, in particular an integrated circuit, comprising: a. a semiconductor body comprising an insulating layer present on a surface thereof, b. at least a first electric connection comprising a first conductive layer extending over said insulating layer, and c. a second electric connection present at least partly below said first connection, said second connection crossing said first connection and being electrically insulated therefrom, said second electric connection comprising a second conductive layer that comprises a first component layer in the form of semiconductor material which is locally deposited on said body surface and is doped with an impurity and a second component layer formed by a surface region of said body underlying said first component layer, said second component layer beind doped with said impurity introduced into said body via the first component layer.
Claim 2
Dependent Claim
136 words
A semiconductor device, in particular an integrated circuit, comprising: a. a semiconductor body comprising an insulating layer present on a surface thereof, b. at least a first electric connection comprising a first conductive layer extending over said insulating layer, and c. a second electric connection present at least partly below said first connection, said second connection crossing said first connection and being electrically insulated therefrom, said second electric connection comprising a second conductive layer that comprises a first component layer in the form of semiconductor material which is locally deposited on said body surface and is doped with an impurity and a second component layer formed by a surface region of said body underlying said first component layer, said second component layer beind doped with said impurity introduced into said body via the first component layer.
Claim 3
Dependent Claim
17 words
A semiconductor device as in claim 1, wherein said first component layer comprises deposited polycrystalline semiconductorr material.
Claim 4
Dependent Claim
21 words
A semiconductor device as in claim 1, wherein said impurity is introduced in said second conductive layer by vapor phase diffusion.
Claim 5
Dependent Claim
21 words
A semiconductor device as in claim 1, further comprising a second insulating layer located between said first and second electric connections.
Claim 6
Dependent Claim
64 words
A semiconductor device as in claim 1, wherein said second conductive layer is in the form of a strip which is crossed by said first conductive connection layer, said device comprising two further conductive connection layers which extend at least partly on said insulating layer and said second conductive layer forming at least part of the conductive connection between said further conductive connection layers.
Claim 7
Dependent Claim
47 words
A semiconductor device as in claim 5, wherein at least at one end of said second conductive layer said further conductive connection layer associated with said one end part is applied directly on a portion of said first component layer located directly on the semiconductor body surface.
Claim 8
Dependent Claim
25 words
A semiconductor device as in claim 1, comprising a semiconductor integrated circuit wherein said first and second conductive connections form interconnection layers at different levels.
Claim 9
Dependent Claim
30 words
A semiconductor device as in claim 7, wherein said semiconductor body is of silicon and the first component layer of said second conductive connection layer is of doped polycrystalline silicon.
Claim 10
Dependent Claim
16 words
A semiconductor device as in claim 8, wherein said first conductive layer consists essentially of aluminum.
Claim 11
Dependent Claim
69 words
A semiconductor device as in claim 8, wherein said integrated circuit comprises a plurality of insulated gate field effect transistors, said first component layer comprising one of a plurality of discrete portions of a deposited layer of polycrystalline silicon, at least other discrete portions of the polycrystalline silicon layer being situated at least partly on said insulating layer and forming a gate electrode of a said field effect transistor.
Claim 12
Dependent Claim
49 words
A semiconductor device as in claim 10, wherein said other discrete portions of said polycrystalline silicon layer extend on a relatively thin part of said insulating layer to form said gate electrode and further extend on a relatively thick part of said insulating layer to form an interconnection layer.
Claim 13
Dependent Claim
39 words
A semiconductor device as in claim 11, wherein, at a position remote from the gate electrode, said other discrete portions of the polycrystalline silicon layer extend above and are in contact with a surface portion of said semiconductor body.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-06-15 | 1979-12-15 | 1980-06-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-06-15 | 1983-12-15 | 1984-06-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-06-15 | 1987-12-15 | 1988-06-15 | $7700.00 | Window Closed / Lapsed |