Three mask self aligned IGFET fabrication process

Claim 2

In a process for making a field effect transistor device having a polycrystalline silicon gate, with a silicon substrate of a first conductivity type having deposited therein source and drain regions of a second conductivity type, with a gate insulator layer, a polycrystalline silicon layer, and an oxygen impervious layer, sequentially formed on the surface of said substrate, with openings in said layers over said source and drain regions, defining a gate region between said source and drain regions and a field region surrounding said source, gate, and drain regions, comprising the steps of: growing a first silicon dioxide layer region on the exposed surfaces of said polycrystalline silicon layer in said gate region; etching said oxygen impervious layer, forming a first oxygen impervious region over said gate region and exposing said polycrystalline silicon layer in said field region; etching said polycrystalline silicon layer in said field region; said polycrystalline silicon layer in said gate region being protected from etching by said first oxygen impervious region and said first silicon dioxide layer region; etching to remove said first oxygen impervious region; forming electrical contacts with said source and drain regions and said polycrystalline silicon gate region; whereby an hermetically sealed insulated gate field effect transistor device can be made in an improved manner.

Claim 3

The process of claim 1 wherein said first oxygen impervious region is composed of silicon nitride.

Claim 4

The process of claim 1 wherein said gate insulator layer is composed of silicon dioxide.

Claim 5

The process of claim 1 wherein said growing step includes the growth of a second silicon dioxide layer on the exposed silicon surface of said source and drain regions; whereby said source and drain regions are protected from etching during said etching step for the polycrystalline silicon layer in said field region.

Claim 6

The process of claim 1 wherein said step of etching said oxygen impervious layer further comprises: forming a second and a third oxygen impervious regions over said source and said drain regions, respectively; and which process further comprises the steps of: after said step of etching said polycrystalline silicon layer, the step of growing a silicon dioxide layer on the surface of said silicon substrate in regions not covered by said first, second or third oxygen imprevious regions; said step of etching to remove said oxygen impervious region further comprising: etching to remove said second and said third oxygen impervious regions; whereby contact holes are formed for said source of drain regions.

Claim 7

The process of claim 5 wherein said the first, second, and third oxygen impervious regions are composed of silicon nitride.

Claim 8

The process of claim 5 wherein said gate insulator layer is silicon dioxide.

Claim 9

The process of claim 5, wherein said step of growing a silicon dioxide layer on the surface of said silicon substrate in regions not covered by said first, second or third oxygen impervious regions further comprises growing the oxide thickness such that its upper surface is coplanar with the upper surface of said polycrystalline silicon layer in said gate region.

Claim 10

In a process for making an insulated gate field effect transistor device having a polycrystalline silicon gate, with a silicon substrate of a first conductivity type having deposited therein a source and drain regions of a second conductivity type, with a silicon dioxide gate insulator layer, a polycrystalline silicon layer, and a silicon nitride layer, sequentially formed on the surface of said substrate, openings in said layers defining a gate region between said source and said drain regions and a field region surrounding said source, said gate and said drain regions, comprising the steps of: growing a first silicon dioxide region on the exposed surfaces of said polycrystalline silicon gate region and a second silicon dioxide region on the exposed silicon surface of said source and drain regions; depositing a second silicon nitride layer over all exposed surfaces; etching said first and said second silicon nitride layers to form a first silicon nitride region over said gate region, a second silicon nitride region over said source region, and a third silicon nitride region over said drain region; etching to remove said polycrystalline silicon layer in said field region; said polycrystalline silicon layer in said gate region being protected from etching by said first silicon nitride region and said first silicon dioxide region; etching to remove said first, second, and third silicon nitride regions; forming electrical contact with said source and drain regions and with said polycrystalline silicon gate regions; whereby hermetically sealed insulated gate field effect transistor device can be made in an improved manner.

Claim 11

In a process for making an insulated gate field effect transistor device having a polycrystalline silicon gate, with a silicon substrate of a first conductivity type having deposited therein a source and drain regions of a second conductivity type, with a silicon dioxide gate insulator layer, a polycrystalline silicon layer, and a silicon nitride layer, sequentially formed on the surface of said substrate, openings in said layers defining a gate region between said source and said drain regions and a field region surrounding said source, said gate and said drain regions, comprising the steps of: growing a first silicon dioxide region on the exposed surfaces of said polycrystalline silicon gate region and a second silicon dioxide region on the exposed silicon surface of said source and drain regions; depositing a second silicon nitride layer over all exposed surfaces; etching said first and said second silicon nitride layers to form a first silicon nitride region over said gate region, a second silicon nitride region over said source region, and a third silicon nitride region over said drain region; etching to remove said polycrystalline silicon layer in said field region; said polycrystalline silicon layer in said gate region being protected from etching by said first silicon nitride region and said first silicon dioxide region; etching to remove said first, second, and third silicon nitride regions; forming electrical contact with said source and drain regions and with said polycrystalline silicon gate regions; whereby hermetically sealed insulated gate field effect transistor device can be made in an improved manner.

Claim 12

In a process for making a field effect transistor device having a polycrystalline silicon gate, with a silicon substrate of a first conductivity type having deposited therein source and drain regions of a second conductivity type, with a gate insulator layer, a polycrystalline silicon layer, and an oxygen impervious layer, sequentially formed on the surface of said substrate, with openings in said layers over said source and drain regions as delineated by a first photolithographic mask, defining a gate region between said source and drain regions and a field region surrounding said source, gate and drain regions, comprising the steps of: growing a first silicon dioxide layer region on the exposed surfaces of said polycrystalline silicon layer in said gate region; etching said oxygen impervious layer, forming a first oxygen impervious region over said gate region as delineated by a second photolithographic mask and exposing said polycrystalline silicon layer in said field region; etching said polycrystalline silicon layer in said field region; said polycrystalline silicon layer in said gate region being protected from etching by said first oxygen impervious region and said first silicon dioxide layer region; etching to remove said first oxygen impervious region; forming electrical contacts with said source and drain regions and said polycrystalline silicon gate region, as delineated by a third photolithographic mask; whereby an hermetically sealed insulated gate field effect transistor device can be made in a process with three masking steps.

Claim 13

In a process for making a field effect transistor device having a polycrystalline silicon gate, with a silicon substrate of a first conductivity type having deposited therein source and drain regions of a second conductivity type, with a gate insulator layer, a polycrystalline silicon layer, and an oxygen impervious layer, sequentially formed on the surface of said substrate, with openings in said layers over said source and drain regions as delineated by a first photolithographic mask, defining a gate region between said source and drain regions and a field region surrounding said source, gate and drain regions, comprising the steps of: growing a first silicon dioxide layer region on the exposed surfaces of said polycrystalline silicon layer in said gate region; etching said oxygen impervious layer, forming a first oxygen impervious region over said gate region as delineated by a second photolithographic mask and exposing said polycrystalline silicon layer in said field region; etching said polycrystalline silicon layer in said field region; said polycrystalline silicon layer in said gate region being protected from etching by said first oxygen impervious region and said first silicon dioxide layer region; etching to remove said first oxygen impervious region; forming electrical contacts with said source and drain regions and said polycrystalline silicon gate region, as delineated by a third photolithographic mask; whereby an hermetically sealed insulated gate field effect transistor device can be made in a process with three masking steps.

Claim 14

The process of claim 10 wherein said first oxygen impervious region is composed of silicon nitride.

Claim 15

The process of claim 10 wherein said gate insulator layer is composed of silicon dioxide.

Claim 16

The process of claim 10 wherein said growing step includes the growth of a second silicon dioxide layer on the exposed silicon surface of said source and drain regions; whereby said source and drain regions are protected from etching during said etching step for the polycrystalline silicon layer in said field region.

Claim 17

The process of claim 10 wherein said step of etching said oxygen impervious layer further comprises: forming a second and a third oxygen impervious regions over said source and said drain regions, respectively; and which process further comprises the steps of: after said step of etching said polycrystalline silicon layer, the step of growing a silicon dioxide layer on the surface of said silicon substrate in regions not covered by said first, second or third oxygen impervious regions; said step of etching to remove said oxygen impervious region further comprising: etching to remove said second and said third oxygen impervious regions; whereby contact holes are formed for said source of drain regions.

Claim 18

The process of claim 14 wherein said the first, second, and third oxygen impervious regions are composed of silicon nitride.

Claim 19

The process of claim 14 wherein said gate insulator layer is silicon dioxide.

Claim 20

The process of claim 14, wherein said step of growing a silicon dioxide layer on the surface of said silicon substrate in regions not covered by said first, second or third oxygen impervious region further comprises growing the oxide thickness such that its upper surface is coplanar with the upper surface of said polycrystalline silicon layer in said gate region.

Claim 21

In a process for making an insulated gate field effect transistor device having a polycrystalline silicon gate, with a silicon substrate of a first conductivity type having deposited therein a source and drain regions of a second conductivity type, with a silicon dioxide gate insulator layer, a polycrystalline silicon layer, and a silicon nitride layer, sequentially formed on the surface of said substrate, openings in said layers as delineated by a first photolithographic mask, defining a gate region between said source and said drain regions and a field region surrounding said source, said gate and said drain regions, comprising the steps of: growing a first silicon dioxide region on the exposed surfaces of said polycrystalline silicon gate region and a second silicon dioxide region on the exposed silicon surface of said source and drain regions; depositing a second silicon nitride layer over all exposed surfaces; etching said first and said second silicon nitride layers to form a first silicon nitride region over said gate region, a second silicon nitride region over said source region, and a third silicon nitride region over said drain region, as delineated by a second photolithographic mask; etching to remove said polycrystalline silicon layer in said field region; said polycrystalline silicon layer in said gate region being protected from etching by said first silicon nitride region and said first silicon dioxide region; etching to remove said first, second, and third silicon nitride regions; forming electrical contact with said source and drain regions and with said polycrystalline silicon gate regions, as delineated by a third photolithographic mask; whereby an hermetically sealed insulated gate field effect transistor device can be made with a process having three masking steps.

Claim 22

In a process for making an insulated gate field effect transistor device having a polycrystalline silicon gate, with a silicon substrate of a first conductivity type having deposited therein a source and drain regions of a second conductivity type, with a silicon dioxide gate insulator layer, a polycrystalline silicon layer, and a silicon nitride layer, sequentially formed on the surface of said substrate, openings in said layers as delineated by a first photolithographic mask, defining a gate region between said source and said drain regions and a field region surrounding said source, said gate and said drain regions, comprising the steps of: growing a first silicon dioxide region on the exposed surfaces of said polycrystalline silicon gate region and a second silicon dioxide region on the exposed silicon surface of said source and drain regions; depositing a second silicon nitride layer over all exposed surfaces; etching said first and said second silicon nitride layers to form a first silicon nitride region over said gate region, a second silicon nitride region over said source region, and a third silicon nitride region over said drain region, as delineated by a second photolithographic mask; etching to remove said polycrystalline silicon layer in said field region; said polycrystalline silicon layer in said gate region being protected from etching by said first silicon nitride region and said first silicon dioxide region; etching to remove said first, second, and third silicon nitride regions; forming electrical contact with said source and drain regions and with said polycrystalline silicon gate regions, as delineated by a third photolithographic mask; whereby an hermetically sealed insulated gate field effect transistor device can be made with a process having three masking steps.

Claim 23

In a process for making a field effect transistor device having a polycrystalline silicon gate, with a silicon substrate of a first conductivity type having deposited therein source and drain regions of a second conductivity type, with a gate insulator layer, a polycrystalline silicon layer, and an oxygen impervious layer, sequentially formed on the surface of said substrate, with openings in said layers over said source and drain regions, defining a gate region between said source and drain regions and a field region surrounding said source, gate, and drain regions, comprising the steps of: growing a first silicon dioxide layer region on the exposed surfaces of said polycrystalline silicon layer in said gate region; etching said oxygen impervious layer, forming a first oxygen impervious region over said gate region and exposing said polycrystalline silicon layer in said field region; oxidizing said polycrystalline silicon layer in said field region to form a field oxide layer; said polycrystalline silicon layer in said gate region being protected from excessive oxidation by said first oxygen impervious region and said first silicon dioxide layer region; etching to remove said first oxygen impervious region; forming electrical contacts with said source and drain regions and said polycrystalline silicon gate region; whereby an hermetically sealed insulated gate field effect transistor device can be made in an improved manner.

Claim 24

In a process for making a field effect transistor device having a polycrystalline silicon gate, with a silicon substrate of a first conductivity type having deposited therein source and drain regions of a second conductivity type, with a gate insulator layer, a polycrystalline silicon layer, and an oxygen impervious layer, sequentially formed on the surface of said substrate, with openings in said layers over said source and drain regions, defining a gate region between said source and drain regions and a field region surrounding said source, gate, and drain regions, comprising the steps of: growing a first silicon dioxide layer region on the exposed surfaces of said polycrystalline silicon layer in said gate region; etching said oxygen impervious layer, forming a first oxygen impervious region over said gate region and exposing said polycrystalline silicon layer in said field region; oxidizing said polycrystalline silicon layer in said field region to form a field oxide layer; said polycrystalline silicon layer in said gate region being protected from excessive oxidation by said first oxygen impervious region and said first silicon dioxide layer region; etching to remove said first oxygen impervious region; forming electrical contacts with said source and drain regions and said polycrystalline silicon gate region; whereby an hermetically sealed insulated gate field effect transistor device can be made in an improved manner.

Claim 25

The process of claim 19 wherein said first oxygen impervious region is composed of silicon nitride.

Claim 26

The process of claim 19 wherein said gate insulator layer is composed of silicon dioxide.

Claim 27

The process of claim 19 wherein said growing step includes the growth of a second silicon dioxide layer on the exposed silicon surface of said source and drain regions; whereby said source and drain regions are protected from etching during said etching step for the polycrystalline silicon layer in said field region.

Claim 28

The process of claim 19 wherein said step of etching said oxygen impervious layer further comprises: forming a second and a third oxygen impervous region over said source and said drain regions, respectively; said step of oxidizing said polycrystalline silicon in said field region further comprising the growth of an oxide layer on the surface of said silicon substrate in regions not covered by said first, second or third oxygen impervious regions; said step of etching to remove said oxygen impervious regions further comprising: etching to remove said second and said third oxygen impervious regions; whereby contact holes are formed for said source of drain regions.

Claim 29

The process of claim 23 wherein said the first, second, and third oxygen impervious regions are composed of silicon nitride.

Claim 30

The process of claim 23 wherein said gate insulator layer is silicon dioxide.

Claim 31

The process of claim 23 wherein said step of oxidizing said polycrystalline silicon in said field region further comprises growing the oxide thickness such that its upper surface is coplanar with the upper surface of said polycrystalline silicon layer in said gate region.

Claim 32

In a process for making an insulated gate field effect transistor device having a polycrystalline silicone gate, with a silicon substrate of a first conductivity type having deposited therein a source and drain regions of a second conductivity type, with a silicon dioxide gate insulator layer, a polycrystalline silicon layer, and a silicon nitride layer, sequentially formed on the surface of said substrate, openings in said layers defining a gate region between said source and said drain regions and a field region surrounding said source, said gate and said drain regions, compprising the steps of: growing a first silicon dioxide region on the exposed surface of said polycrystalline silicon gate region and a second silicon dioxide region on the exposed silicon surface of said source and drain regions; depositing a second silicon nitride layer over all exposed surfaces; etching said first and said second silicon nitride layers to form a first silicon nitride region over said gate region, a second silicon nitride region over said source region, and a third silicon nitride region over said drain region; oxidizing said polycrystalline silicon layer in said field region to form a field oxide layer; said polycrystalline silicon layer in said gate region being protected from etching by said first silicon nitride region and said first silicon dioxide region; etching to remove said first, second, and third silicon nitride regions; forming electrical contact with said source and drain regions and with said polycrystalline silicon gate regions; whereby an hermetically sealed insulated gate field effect transistor device can be made in an improved manner.

Claim 33

In a process for making an insulated gate field effect transistor device having a polycrystalline silicone gate, with a silicon substrate of a first conductivity type having deposited therein a source and drain regions of a second conductivity type, with a silicon dioxide gate insulator layer, a polycrystalline silicon layer, and a silicon nitride layer, sequentially formed on the surface of said substrate, openings in said layers defining a gate region between said source and said drain regions and a field region surrounding said source, said gate and said drain regions, compprising the steps of: growing a first silicon dioxide region on the exposed surface of said polycrystalline silicon gate region and a second silicon dioxide region on the exposed silicon surface of said source and drain regions; depositing a second silicon nitride layer over all exposed surfaces; etching said first and said second silicon nitride layers to form a first silicon nitride region over said gate region, a second silicon nitride region over said source region, and a third silicon nitride region over said drain region; oxidizing said polycrystalline silicon layer in said field region to form a field oxide layer; said polycrystalline silicon layer in said gate region being protected from etching by said first silicon nitride region and said first silicon dioxide region; etching to remove said first, second, and third silicon nitride regions; forming electrical contact with said source and drain regions and with said polycrystalline silicon gate regions; whereby an hermetically sealed insulated gate field effect transistor device can be made in an improved manner.

Claim 34

In a process for making a field effect transistor device having a polycrystalline silicon gate, with a silicon substrate of a first conductivity type having deposited therein source and drain regions of a second conductivity type, with a gate insulator layer, a polycrystalline silicon layer, and an oxygen impervious layer, sequentially formed on the surface of said substrate, with openings in said layers over said source and drain regions, defining a gate region between said source and drain regions and a field region surrounding said source, gate, and drain regions, comprising the steps of: growing a first silicon dioxide layer region on the exposed surfaces of said polycrystalline silicon layer in said gate region; etching said oxygen impervious layer, forming a first oxygen impervious region over said gate region exposing said polycrystalline silicon layer in said field region; etching to remove a selected fraction of the thickness of said polycrystalline silicon layer in said field region; oxidizing the remaining polycrystalline silicon in the field region forming a field oxide layer having a selected thickness; said polycrystalline silicon layer in said gate region being protected from etching and excessive oxidation by said first oxygen impervious region and said first silicon dioxide layer region; etching to remove said first oxygen impervious region; forming electrical contacts with said source and drain regions and said polycrystalline silicon gate region; whereby an hermetically sealed insulated gate field effect transistor device can be made in an improved manner.

Claim 35

In a process for making a field effect transistor device having a polycrystalline silicon gate, with a silicon substrate of a first conductivity type having deposited therein source and drain regions of a second conductivity type, with a gate insulator layer, a polycrystalline silicon layer, and an oxygen impervious layer, sequentially formed on the surface of said substrate, with openings in said layers over said source and drain regions, defining a gate region between said source and drain regions and a field region surrounding said source, gate, and drain regions, comprising the steps of: growing a first silicon dioxide layer region on the exposed surfaces of said polycrystalline silicon layer in said gate region; etching said oxygen impervious layer, forming a first oxygen impervious region over said gate region exposing said polycrystalline silicon layer in said field region; etching to remove a selected fraction of the thickness of said polycrystalline silicon layer in said field region; oxidizing the remaining polycrystalline silicon in the field region forming a field oxide layer having a selected thickness; said polycrystalline silicon layer in said gate region being protected from etching and excessive oxidation by said first oxygen impervious region and said first silicon dioxide layer region; etching to remove said first oxygen impervious region; forming electrical contacts with said source and drain regions and said polycrystalline silicon gate region; whereby an hermetically sealed insulated gate field effect transistor device can be made in an improved manner.

Claim 36

The process of claim 28 wherein the selected fractional thickness of said polycrystalline silicon removed from said field region is such that the selected thickness of the field oxide layer resulting from said step of oxidizing makes the upper surface of said field oxide substantially coplanar with the upper surface of said polycrystalline silicon gate.

Claim 37

The process of claim 29, wherein said selected fractional thickness of said polycrystalline silicon removed from said field region is approximately 60%.

Claim 38

The process of claim 28 wherein said first oxygen impervious region is composed of silicon nitride.

Claim 39

The process of claim 28 wherein said gate insulator layer is composed of silicon dioxide.

Claim 40

The process of claim 28 wherein said growing step includes the growth of a second silicon dioxide layer on the exposed silicon surface of said source and drain regions; whereby said source and drain regions are protected from etching during said etching step for the polycrystalline silicon layer in said field region.

Claim 41

The process of claim 28 wherein said step of etching said oxygen impervious layer further comprises; forming a second and a third oxygen impervious region over said source and said drain regions respectively; said step of oxidizing said polycrystalline silicon in said field region further comprising the growth of an oxide layer on the surface of said silicon substrate in regions not covered by said first, second or third oxygen impervious regions; said step of etching to remove said oxygen impervious regions further comprising: etching to remove said second and said third oxygen impervious regions.

Claim 42

The process of claim 34 wherein said the first, second, and third oxygen impervious regions are composed of silicon nitride.

Claim 43

The process of claim 34 wherein said gate insulator layer is silicon dioxide.

Claim 44

In a process for making an insulated gate field effect transistor device having a polycrystalline silicon gate, with a silicon substrate of a first conductivity type having deposited therein a source and drain regions of a second conductivity type, with a silicon dioxide gate insulator layer, a polycrystalline silicon layer, and a silicon nitride layer, sequentially formed on the surface of said substrate, openings in said layers defining a gate region between said source and said drain regions and a field region surrounding said source, said gate and said drain regions, comprising the steps of: growing a first silicon dioxide region on the exposed surface of said polycrystalline silicon gate region and a second silicon dioxide region on the exposed silicon surface of said source and drain regions; depositing a second silicon nitride layer over all exposed surfaces; etching said first and said second silicon nitride layers to form a first silicon nitride region over said gate region, a second silicon nitride region over said source region, and a third silicon nitride region over said drain region; etching to remove a selected fraction of the thickness of said polycrystalline silicon layer in said field region; oxidizing the remaining polycrystalline silicon in the field region forming a field oxide having a selected thickness; said polycrystalline silicon layer in said gate region being protected from etching and excessive oxidation by said first silicon nitride region and said first silicon dioxide region; etching to remove said first, second, and third silicon nitride regions; forming electrical contact with said source and drain regions and with said polycrystalline silicon gate regions; whereby hermetically sealed insulated gate field effect transistor device can be made in an improved manner.

Claim 45

In a process for making an insulated gate field effect transistor device having a polycrystalline silicon gate, with a silicon substrate of a first conductivity type having deposited therein a source and drain regions of a second conductivity type, with a silicon dioxide gate insulator layer, a polycrystalline silicon layer, and a silicon nitride layer, sequentially formed on the surface of said substrate, openings in said layers defining a gate region between said source and said drain regions and a field region surrounding said source, said gate and said drain regions, comprising the steps of: growing a first silicon dioxide region on the exposed surface of said polycrystalline silicon gate region and a second silicon dioxide region on the exposed silicon surface of said source and drain regions; depositing a second silicon nitride layer over all exposed surfaces; etching said first and said second silicon nitride layers to form a first silicon nitride region over said gate region, a second silicon nitride region over said source region, and a third silicon nitride region over said drain region; etching to remove a selected fraction of the thickness of said polycrystalline silicon layer in said field region; oxidizing the remaining polycrystalline silicon in the field region forming a field oxide having a selected thickness; said polycrystalline silicon layer in said gate region being protected from etching and excessive oxidation by said first silicon nitride region and said first silicon dioxide region; etching to remove said first, second, and third silicon nitride regions; forming electrical contact with said source and drain regions and with said polycrystalline silicon gate regions; whereby hermetically sealed insulated gate field effect transistor device can be made in an improved manner.