US3837071A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of simultaneously making a sigfet and a mosfet
Assignee: RCA Corp
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Filing: 1973-01-16
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Granted: 1974-09-24
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Expires: 1993-01-16
Abstract
Abstract A method comprising providing a gate electrode layer of polycrystalline silicon for a SIGFET, depositing a layer of silicon dioxide doped with an impurity of opposite conductivity type on the gate electrode layer and on the surface of the single crystal layer except where the channel of a MOSFET is to be located, diffusing dopant from the doped oxide layer into the gate electrode layer, and into the single crystal layer to form source and drain regions of the transistors, depositing a layer of gate insulating material on the channel region of the MOSFET, and depositing metal on the source and drain regions and on the gates of both transistors.
Inventors
- 👤 R Ronen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 09:16
CPC Classifications
H; H10; H10D; H10D86/00; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/84; H10D86/01; H10D86/03; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/03; Y10S148/043; Y10S148/049; Y10S148/053; Y10S148/085; Y10S148/122; Y10S148/141
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
18 words
A method according to claim 1 in which said semiconductor crystalline layer is a single chip of material.
Claim 2
Dependent Claim
23 words
A method according to claim 1 in which said semiconductor crystalline layer comprises a plurality of discrete epitaxial portions on an insulating substrate.
Claim 3
Dependent Claim
16 words
A method according to claim 1 in which said layer of insulating material is silicon dioxide.
Claim 4
Dependent Claim
41 words
A method according to claim 1 in which said polycrystalline silicon layer is deposited so as to completely cover said surface and then most of said polycrystalline layer is removed to leave only that portion thereof over said gate insulating layer.
Claim 5
Dependent Claim
26 words
A method according to claim 1 in which said semiconductor single crystalline layer is N type and said doped silicon dioxide layer is doped P type.
Claim 6
Dependent Claim
28 words
A method according to claim 1 in which said heating is done in an oxidizing ambient and said MOSFET gate insulating material is deposited during the diffusion step.
Claim 7
Dependent Claim
14 words
A method according to claim 1 in which said metal electrode layers comprise aluminum.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-09-23 | 1978-03-25 | 1978-09-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-09-23 | 1982-03-25 | 1982-09-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-09-23 | 1986-03-25 | 1986-09-24 | $7700.00 | Window Closed / Lapsed |