Patent US3953264A successfully refreshed from Google Patents.
US3953264A
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Integrated heater element array and fabrication method
Assignee: International Business Machines Corp
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Filing: 1974-08-29
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Granted: 1976-04-27
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Expires: 1994-08-29
Abstract
Abstract A thermal display heater elements array for a comprising an array of semiconductor heater mesas having a larger cross-sectional area at the display surface than at the support surface. The preferred structure is in the shape of a truncated, inverted pyramid. The novel method includes forming the inverted heater elements by etching trenches in one surface of the semiconductor substrate and forming the heater mesas at the opposite surface, with the trenches defining the individual mesas.
Inventors
- 👤 Leon L. Wu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 14:20
CPC Classifications
B; B41; B41J; B41J2/00; B41J2/315; B41J2/32; B41J2/335; B41J2/34; Y; Y10; Y10S; Y10S438/00; Y10S438/969
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
161 words
A method for fabricating a matrix of heating mesas in a semiconductor substrate, the area of the surface of the mesas opposite said substrate being larger than the area contiguious to said substrate, comprising the steps of: forming a matrix of trenches in a first major surface of said substrate, the bottom of said trenches having an area which is smaller than the area at the upper surface of the substrate; filling said trenches with a material which is soluble in a solvent in which said substrate is substantially insoluble; forming an epitaxial layer on said first major surface; forming semiconductor circuit elements associated with said heating mesas in said epitaxial layer, removing a portion of the major surface of said substrate opposite said first major surface so as to expose said soluble material at the bottoms of said trenches; and etching said soluble material from said trenches; whereby the semiconductor substrate regions defining said trenches are in the desired shape.
Claim 2
Independent Claim
161 words
A method for fabricating a matrix of heating mesas in a semiconductor substrate, the area of the surface of the mesas opposite said substrate being larger than the area contiguious to said substrate, comprising the steps of: forming a matrix of trenches in a first major surface of said substrate, the bottom of said trenches having an area which is smaller than the area at the upper surface of the substrate; filling said trenches with a material which is soluble in a solvent in which said substrate is substantially insoluble; forming an epitaxial layer on said first major surface; forming semiconductor circuit elements associated with said heating mesas in said epitaxial layer, removing a portion of the major surface of said substrate opposite said first major surface so as to expose said soluble material at the bottoms of said trenches; and etching said soluble material from said trenches; whereby the semiconductor substrate regions defining said trenches are in the desired shape.
Claim 3
Dependent Claim
28 words
A method as in claim 1 further comprising the step of: filling said trenches with a thermal isolation material after said soluble material is etched from said trenches.
Claim 4
Dependent Claim
34 words
A method as in claim 1 wherein: said semiconductor substrate is silicon having a (111) crystallographic orientation; said soluble material is polycrystalline silicon; and said solvent is a mixture of ethylenediamine, pyrocatechol and water.
Claim 5
Dependent Claim
78 words
A method as in claim 1 wherein said semiconductor substrate is silicon having a (100) crystallographic orientation, said soluble material is polycrystalline silicon and said solvent is a mixture of ethylenediamine, pyrocatechol and water and further comprising the step of: forming a coating of silicon dioxide on the walls of said trenches after said trench-forming step and before said filling step; said silicon dioxide coating serving to protect said (100) oriented silicon from attack by said dissolving mixture.
Claim 6
Dependent Claim
29 words
A method as in claim 4 wherein said trenches are formed in the <012> and <021> crystallographic directions in said substrate, whereby mesas having sharp, well-defined corners are formed.
Claim 7
Independent Claim
95 words
A method for fabricating a matrix of heating mesas in a monocrystalline silicon substrate, the area of the surface of said mesas opposite said substrate being larger than the area contiguous to said substrate, comprising: etching a matrix of trenches in a first major surface of said semiconductor substrate, the bottom of said trenches having a surface area which is smaller than the surface area at the upper surface of said substrate; filling said trenches with polycrystalline silicon substantially flush with the surface of said substrate; forming an epitaxial layer on said first major surface;
Claim 8
Independent Claim
95 words
A method for fabricating a matrix of heating mesas in a monocrystalline silicon substrate, the area of the surface of said mesas opposite said substrate being larger than the area contiguous to said substrate, comprising: etching a matrix of trenches in a first major surface of said semiconductor substrate, the bottom of said trenches having a surface area which is smaller than the surface area at the upper surface of said substrate; filling said trenches with polycrystalline silicon substantially flush with the surface of said substrate; forming an epitaxial layer on said first major surface;
Claim 9
Dependent Claim
66 words
forming semiconductor circuit elements associated with said heating mesas in said epitaxial layer; removing a portion of the major surface of said substrate opposite said first major surface so as to expose said polycrystalline silicon at the bottom of said trenches; and etching said polycrystalline silicon from said trenches, whereby the substrate material between said trenches is in the form of mesas in the desired shape.
Claim 10
Dependent Claim
66 words
forming semiconductor circuit elements associated with said heating mesas in said epitaxial layer; removing a portion of the major surface of said substrate opposite said first major surface so as to expose said polycrystalline silicon at the bottom of said trenches; and etching said polycrystalline silicon from said trenches, whereby the substrate material between said trenches is in the form of mesas in the desired shape.
Claim 11
Dependent Claim
28 words
A method as in claim 6 wherein said circuit element forming step is performed in a region of said epitaxial layer which is remote from said heating elements.
Claim 12
Dependent Claim
28 words
A method as in claim 6 further comprising the step of filling said trenches with a thermal insulation material after said polycrystalline silicon material has been removed therefrom.
Claim 13
Dependent Claim
32 words
A method as in claim 6 wherein: said semiconductor substrate is silicon having a (111) crystallographic orientation; the etching of said polycrystalline is accomplished by a mixture of ethylenediamine, pyrocatechol and water.
Claim 14
Dependent Claim
78 words
A method as in claim 6 wherein said semiconductor substrate is silicon having a (100) crystallographic orientation and further comprising the steps of: forming a coating of silicon dioxide on the walls of said trenches after said trench-forming step; dissolving said polycrystalline silicon in a mixture of ethylenediamine, pyrocatechol and water after the step of exposing the bottoms of said trenches, said silicon dioxide coating serving to protect said (100) oriented silicon from attack by said dissolving mixture.
Claim 15
Dependent Claim
29 words
A method as in claim 10 wherein said trenches are formed in the <012> and <021> crystallographic directions in said substrate, whereby mesas having sharp, well-defined corners are formed.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-04-27 | 1979-10-27 | 1980-04-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-04-27 | 1983-10-27 | 1984-04-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-04-27 | 1987-10-27 | 1988-04-27 | $7700.00 | Window Closed / Lapsed |