US3892033A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device
Assignee: US Philips Corp
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Filing: 1972-11-20
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Granted: 1975-07-01
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Expires: 1992-11-20
Abstract
Abstract A method of manufacturing a semiconductor device comprising the steps of providing a semiconductor wafer comprising a first layer and a second layer that is of high-ohmic monocrystalline semiconductor material, and contains at least one recess extending only partially through said second layer, depositing a further semiconductor layer at the second layer to fill the recess and to form a semiconductor junction with the second layer, removing a portion of the semiconductor wafer by etching the first layer to reach the second layer and thereafter chemically etching a portion of the second layer to at least the monocrystalline semiconductor material deposited at the recess, and forming a semiconductor circuit element in at least one of the deposited monocrystalline semiconductor material and the second layer.
Inventors
- 👤 Else Kooi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 08:25
CPC Classifications
H; H10; H10D; H10D99/00; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0188; H10D84/0193; H10D84/02; H10D84/03; H10D84/038; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/019; H10W10/10; Y; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
200 words
A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE COMPRISING THE STEPS OF: A. PROVIDING A SEMICONDUCTOR WAFER COMPRISING A FIRST LAYER OF LOW-OHMIC MATERIAL HAVING A PLANE SURFACE AND A SECOND LAYER OF HIGH-OHMIC MONOCRYSTALLINE SEMICONDUCTOR MATERIAL OF A FIRST CONDUCTIVITY TYPE DISPOSED ON SAID PLANE SURFACE, SAID SECOND LAYER COMPRISING A MAJOR SURFACE AND AT LEAST ONE RECESS AT SAID MAJOR SURFACE, SAID RECESS EXTENDING ONLY PARTIALLY THROUGH SAID SECOND LAYER, B. DEPOSITING A FURTHER SEMICONDUCTOR LAYER HAVING ONE OF SAID FIRST CONDUCTIVITY TYPE AND A SECOND CONDUCTIVITY TYPE AT SAID HIGH-OHMIC SECOND LAYER TO FILL SAID RECESS AND TO FORM A SEMICONDUCTOR JUNCTION WITH SAID SECOND LAYER, AT LEAST THAT PORTION OF SAID FUNCTION SEMICONDUCTOR LAYER DISPOSED AT SAID RECESS BEING MONOCRYSTALLINE, C. REMOVING A PORTION OF SAID SEMICONDUCTOR WAFER FROM THE OPPOSITE MAJOR SURFACE OF SAID SEMICONDICTOR WAFER BY SELECTIVE ELECTROLYTIC ETCHING OF SAID LOW-OHMIC FIRST LAYER TO SAID PLANE SURFACE TO REACH SAID SECOND LAYER AND THEREAFTER CHEMICALLY ETCHING A PORTION OF SAID SECOND LAYER TO AT LEAST SAID MONOCRYSTALLINE SEMICONDUCTOR MATERIAL DEPOSITED AT SAID RECESS, AND D. FORMING A SEMICONDUCTOR CIRCUIT ELEMENT IN AT LEAST ONE OF SAID DEPOSITED MONOCRYSTALLINE SEMICONDUCTOR MATERIAL AND SAID SECOND LAYER.
Claim 2
Independent Claim
200 words
A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE COMPRISING THE STEPS OF: A. PROVIDING A SEMICONDUCTOR WAFER COMPRISING A FIRST LAYER OF LOW-OHMIC MATERIAL HAVING A PLANE SURFACE AND A SECOND LAYER OF HIGH-OHMIC MONOCRYSTALLINE SEMICONDUCTOR MATERIAL OF A FIRST CONDUCTIVITY TYPE DISPOSED ON SAID PLANE SURFACE, SAID SECOND LAYER COMPRISING A MAJOR SURFACE AND AT LEAST ONE RECESS AT SAID MAJOR SURFACE, SAID RECESS EXTENDING ONLY PARTIALLY THROUGH SAID SECOND LAYER, B. DEPOSITING A FURTHER SEMICONDUCTOR LAYER HAVING ONE OF SAID FIRST CONDUCTIVITY TYPE AND A SECOND CONDUCTIVITY TYPE AT SAID HIGH-OHMIC SECOND LAYER TO FILL SAID RECESS AND TO FORM A SEMICONDUCTOR JUNCTION WITH SAID SECOND LAYER, AT LEAST THAT PORTION OF SAID FUNCTION SEMICONDUCTOR LAYER DISPOSED AT SAID RECESS BEING MONOCRYSTALLINE, C. REMOVING A PORTION OF SAID SEMICONDUCTOR WAFER FROM THE OPPOSITE MAJOR SURFACE OF SAID SEMICONDICTOR WAFER BY SELECTIVE ELECTROLYTIC ETCHING OF SAID LOW-OHMIC FIRST LAYER TO SAID PLANE SURFACE TO REACH SAID SECOND LAYER AND THEREAFTER CHEMICALLY ETCHING A PORTION OF SAID SECOND LAYER TO AT LEAST SAID MONOCRYSTALLINE SEMICONDUCTOR MATERIAL DEPOSITED AT SAID RECESS, AND D. FORMING A SEMICONDUCTOR CIRCUIT ELEMENT IN AT LEAST ONE OF SAID DEPOSITED MONOCRYSTALLINE SEMICONDUCTOR MATERIAL AND SAID SECOND LAYER.
Claim 3
Dependent Claim
45 words
A method as defined in claim 1, further comprising the step of forming in parts of said further semiconductor layer located within said recess a region of conductivity opposite that of said further layer so as to form a second rectifying junction at said recess.
Claim 4
Dependent Claim
27 words
A method as defined in claim 1, wherein said first layer is one of said first conductivity type, said second conductivity type, and a third conductivity type.
Claim 5
Dependent Claim
80 words
A method as defined in claim 1, wherein portions of said second semiconductor layer define said recess, said method further comprising the step of forming at said recess-defining portions of said second semiconductor layer a zone having a conductivity opposite that of said further semiconductor layer and then carrying out the step of depositing said further semiconductor layer, so that part of said further semiconductor layer disposed at said recess anD said zone form a rectifying junction at said recess.
Claim 6
Dependent Claim
112 words
A method as defined in claim 1, wherein said step of providing a semiconductor wafer comprises providing said first layer and producing a continuous layer of said high-ohmic monocrystalline semiconductor material on said plane surface of said first layer, said continuous layer having a major surface and being the precursor of said second layer, then providing a discontinuous layer of polycrystalline material on and only partially covering said major surface of said continuous layer and then forming said recess in said continuous layer through an opening in said polycrystalling layer so as to produce said second layer, portions of said further semiconductor layer subsequently disposed at said discontinuous layer being substantially polycrystalline.
Claim 7
Dependent Claim
111 words
A method as defined in claim 1, wherein said step of providing a semiconductor wafer comprises providing said first layer and producing a continuous layer of said high-ohmic monocrystalline semiconductor material on said plane surface of said first layer, said continuous layer having a major surface and being the precursor of said second layer, then providing a discontinuous layer of amorphous material on and only partially covering said major surface of said continuous layer and then forming said recess in said continuous layer through an opening in said amorphous layer so as to produce said second layer, portions of said further semiconductor layer disposed at said discontinuous layer being substantially polycrystalline.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-06-30 | 1978-12-30 | 1979-07-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-06-30 | 1982-12-30 | 1983-07-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-06-30 | 1986-12-30 | 1987-07-01 | $7700.00 | Window Closed / Lapsed |