Abstract An improved method for producing a layer of a protective lacquer, which ioves the blocking properties and stabilizes the surface of a semiconductor device, on the edge surface of a semiconductor body in the region where the pn-junction or junctions of the device formed in the body exit to the surface, wherein the semiconductor wafers are applied, at mutual spacings appropriate for their further processing, to a plastic support layer which is heated until it softens, after cooling of the support a protective lacquer is introduced in the spaces between the semiconductor wafers to enclose the pn-junction(s) coming to the surface, and after hardening of the protective lacquer the lacquer foil formed thereby together with the semiconductor wafers embedded therein is removed from the support. According to the invention, the plastic layer is initially placed onto the surface of a metallic base plate which is provided with planar raised portions; the semiconductor wafers have surfaces conforming to the surface of these raised portions and are placed thereon; the plastic support produces an adhesive connection between the semiconductor wafers and the base plate but does not enter a firm bond with the protective lacquer; and the protective lacquer foil is removed from the support after the support layer has been heated to a temperature which causes same to soften.
In a method for producing a layer of protective lacquer on the edge surface of a semiconductor wafer in the region where the pn-junction or junctions formed in the wafer exit including the steps of: placing a plurality of semiconductor wafers, at mutual spacings appropriate for their further processing, on a plane support layer of plastic material which softens when heated so that one major surface of each wafer contacts the support layer; heating the support layer until it softens; after cooling same introducing a protective lacquer into the spaces between the semiconductor wafers to enclose the edge surfaces of the wafers in the regions where the pn-junctions exit; after hardening the protective lacquer to form a contiguous lacquer foil removing the lacquer foil together with the semiconductor wafers embedded therein from the support layer; the improvement wherein: said method further comprises the steps of providing a metallic base plate having a plurality of raised planar portions on one surface thereof with the raised portions having said mutual spacings and a surface area which conforms to the said major surface of the semiconductor wafers, and applying said support layer to said one surface of said metallic base plate prior to said step of placing; said step of placing includes placing each of said wafers on one of said raised portions; said plastic material produces an adhesive connection between the semiconductor wafers and the base plate but does not enter into a firm bond with the protective lacquer; and said step of removing includes heating the plastic material of the support layer to a temperature sufficient to cause same to again soften.
Claim 2
Dependent Claim
271 words
In a method for producing a layer of protective lacquer on the edge surface of a semiconductor wafer in the region where the pn-junction or junctions formed in the wafer exit including the steps of: placing a plurality of semiconductor wafers, at mutual spacings appropriate for their further processing, on a plane support layer of plastic material which softens when heated so that one major surface of each wafer contacts the support layer; heating the support layer until it softens; after cooling same introducing a protective lacquer into the spaces between the semiconductor wafers to enclose the edge surfaces of the wafers in the regions where the pn-junctions exit; after hardening the protective lacquer to form a contiguous lacquer foil removing the lacquer foil together with the semiconductor wafers embedded therein from the support layer; the improvement wherein: said method further comprises the steps of providing a metallic base plate having a plurality of raised planar portions on one surface thereof with the raised portions having said mutual spacings and a surface area which conforms to the said major surface of the semiconductor wafers, and applying said support layer to said one surface of said metallic base plate prior to said step of placing; said step of placing includes placing each of said wafers on one of said raised portions; said plastic material produces an adhesive connection between the semiconductor wafers and the base plate but does not enter into a firm bond with the protective lacquer; and said step of removing includes heating the plastic material of the support layer to a temperature sufficient to cause same to again soften.
Claim 3
Dependent Claim
15 words
A method as defined in claim 1 wherein said plastic material is a hot-melt adhesive.
Claim 4
Dependent Claim
45 words
A method as defined in claim 1 further comprising: just prior to said step of introducing, cleaning the edge surfaces of said wafers by subjecting same to an etching solution; and wherein the material used for the base plate is resistant to said etching solution.
Claim 5
Dependent Claim
21 words
A method as defined in claim 1 wherein the raised portions on the base plate are arranged in rows and columns.
Claim 6
Dependent Claim
14 words
A method as defined in claim 4 wherein the raised portions are annular discs.