Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
173 words
A process for fabricating a charge coupled device structure in a semiconductor substrate, comprising the steps of selectively applying at least one layer of insulation material to said semiconductor substrate; selectively forming a plurality of spaced-apart first gate electrodes on the uppermost surface of said at least one layer of insulation material; forming a first insulation layer over said plurality of first gate electrodes; forming implanted barrier regions in said semiconductor substrate in the intervals between said plurality of spaced-apart first gate electrodes, the edges of said implanted barrier regions being aligned with the vertical edges of the insulation layer on the respective first gate electrodes; selectively forming a plurality of second gate electrodes on said uppermost surface of said at least one insulating layer between said plurality of spaced-apart first gate electrodes, each of said second gate electrodes substantially occupying the space between adjacent first gate electrode; and connecting each of said second gate electrodes to an individual adjacent first gate electrode to form a composite electrode for a charge coupled element.
Claim 2
Dependent Claim
173 words
A process for fabricating a charge coupled device structure in a semiconductor substrate, comprising the steps of selectively applying at least one layer of insulation material to said semiconductor substrate; selectively forming a plurality of spaced-apart first gate electrodes on the uppermost surface of said at least one layer of insulation material; forming a first insulation layer over said plurality of first gate electrodes; forming implanted barrier regions in said semiconductor substrate in the intervals between said plurality of spaced-apart first gate electrodes, the edges of said implanted barrier regions being aligned with the vertical edges of the insulation layer on the respective first gate electrodes; selectively forming a plurality of second gate electrodes on said uppermost surface of said at least one insulating layer between said plurality of spaced-apart first gate electrodes, each of said second gate electrodes substantially occupying the space between adjacent first gate electrode; and connecting each of said second gate electrodes to an individual adjacent first gate electrode to form a composite electrode for a charge coupled element.
Claim 3
Dependent Claim
39 words
The process as recited in claim 1 wherein the step of forming implanted barrier regions is accomplished by implanting ions of a conductivity type opposite to the conductivity type of said semiconductor substrate in said substrate in said intervals.
Claim 4
Dependent Claim
31 words
The process as recited in claim 2 wherein the connecting step comprises forming an ohmic contact between each of said plurality of first gate electrodes and an adjacent second gate electrode.
Claim 5
Dependent Claim
62 words
The process as recited in claim 3 wherein said step of forming an ohmic contact comprises the steps of forming a second insulation layer over said first insulation layer and said second gate electrodes; selectively removing portions of said first and second insulation layers; and forming a conductive interconnection between each of said first gate electrodes and said adjacent second gate electrodes.
Claim 6
Dependent Claim
45 words
The process as recited in claim 4 wherein the steps of selectively forming said plurality of spaced-apart first gate electrodes and selectively forming said plurality of second gate electrodes are accomplished by depositing doped polycrystalline silicon and removing selected portions of said doped polycrystalline silicon.
Claim 7
Dependent Claim
45 words
The process as recited in claim 5 wherein said step of applying at least one layer of insulation material is accomplished by forming a layer of silicon dioxide on said semiconductor substrate; and forming a layer of silicon nitride on said layer of silicon dioxide.
Claim 8
Dependent Claim
25 words
The process as recited in claim 6 wherein said step of forming a layer of silicon dioxide is accomplished by thermally oxidizing said semiconductor substrate.
Claim 9
Dependent Claim
36 words
The process as recited in claim 7 further including before said step of forming at least one layer of insulation material the step of forming a buried channel region in the surface of said semiconductor substrate.
Claim 10
Dependent Claim
82 words
The process as recited in claim 3 further comprising forming an ohmic contact between each of said plurality of first gate electrodes and an adjacent second gate electrode by selectively removing portions of said first insulation layer prior to the step of forming said second gate electrodes; and forming said plurality of second gate electrodes so that one of said second gate electrodes contacts and forms an electrical communication with the exposed portion of an adjacent one of said first gate electrodes.