Abstract A photon isolator device wherein the photon emitter and photodetector are matched such that the photodetector and transistor unit can be fabricated utilizing standard integrated circuit monolithic isolation techniques resulting in a high efficiency, high speed photon isolator; one preferred emitter utilizes GaAs(1 x)Px with x ranging from 0.20 to 0.48. A special technique is employed to provide a buried layer under the photodetector region that increases the collection layer depth. The elements in the integrated circuit transistor gain stage are formed so as to provide temperature compensation to balance the temperature dependence of the emitted light of the photon isolator. A novel plastic film insulation is utilized to mount and space the emitter and the photodetector elements of the photon isolator.
AN OPTICALLY COUPLED ISOLATOR COMPRISING: A SEMICONDUCTOR PHOTON EMITTER AND A SEMICONDUCTOR PHOTON DETECTOR, SAID EMITTER AND DETECTOR BEING MOUNTED TOGETHER IN SPACED-APART ALIGNMENT; AND AN ISOLATING MATERIAL COMPRISING A LAMINATION OF A POLYMIDE FILM BETWEEN TWO FLUORINATED ETHYLENE-PROPYLENE COPOLYMER FILMS SANDWICHED BETWEEN SAID EMITTER AND DETECTOR FOR PROVIDING A SELECTD SPACING AND ELECTRICAL ISOLATION THEREBETWEEN.
Claim 2
Dependent Claim
56 words
AN OPTICALLY COUPLED ISOLATOR COMPRISING: A SEMICONDUCTOR PHOTON EMITTER AND A SEMICONDUCTOR PHOTON DETECTOR, SAID EMITTER AND DETECTOR BEING MOUNTED TOGETHER IN SPACED-APART ALIGNMENT; AND AN ISOLATING MATERIAL COMPRISING A LAMINATION OF A POLYMIDE FILM BETWEEN TWO FLUORINATED ETHYLENE-PROPYLENE COPOLYMER FILMS SANDWICHED BETWEEN SAID EMITTER AND DETECTOR FOR PROVIDING A SELECTD SPACING AND ELECTRICAL ISOLATION THEREBETWEEN.